KR100328308B1 - 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 - Google Patents

반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 Download PDF

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Publication number
KR100328308B1
KR100328308B1 KR1019990017816A KR19990017816A KR100328308B1 KR 100328308 B1 KR100328308 B1 KR 100328308B1 KR 1019990017816 A KR1019990017816 A KR 1019990017816A KR 19990017816 A KR19990017816 A KR 19990017816A KR 100328308 B1 KR100328308 B1 KR 100328308B1
Authority
KR
South Korea
Prior art keywords
polishing
metal film
alumina
fine particles
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990017816A
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English (en)
Korean (ko)
Other versions
KR19990088368A (ko
Inventor
오노후미요시
Original Assignee
오하시 미츠오
쇼와 덴코 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오하시 미츠오, 쇼와 덴코 가부시키가이샤 filed Critical 오하시 미츠오
Publication of KR19990088368A publication Critical patent/KR19990088368A/ko
Application granted granted Critical
Publication of KR100328308B1 publication Critical patent/KR100328308B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1019990017816A 1998-05-19 1999-05-18 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 Expired - Fee Related KR100328308B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10-136934 1998-05-19
JP13693498 1998-05-19
JP11515899A JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―
JP11-115158 1999-04-22

Publications (2)

Publication Number Publication Date
KR19990088368A KR19990088368A (ko) 1999-12-27
KR100328308B1 true KR100328308B1 (ko) 2002-03-16

Family

ID=26453731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990017816A Expired - Fee Related KR100328308B1 (ko) 1998-05-19 1999-05-18 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법

Country Status (3)

Country Link
JP (1) JP2000038573A (https=)
KR (1) KR100328308B1 (https=)
TW (1) TWI238849B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4557105B2 (ja) * 1999-05-28 2010-10-06 日産化学工業株式会社 研磨用組成物
KR100799965B1 (ko) * 2000-07-08 2008-02-01 에포크 머티리얼 컴퍼니, 리미티드 화학-기계적 연마제 조성물 및 연마 방법
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
KR100447975B1 (ko) * 2001-12-28 2004-09-10 주식회사 하이닉스반도체 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
TWI417245B (zh) * 2008-06-13 2013-12-01 福吉米股份有限公司 氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物
WO2011136387A1 (ja) * 2010-04-28 2011-11-03 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法

Also Published As

Publication number Publication date
JP2000038573A (ja) 2000-02-08
TWI238849B (en) 2005-09-01
KR19990088368A (ko) 1999-12-27

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