JP2000038573A - 半導体装置用金属膜研磨スラリ― - Google Patents

半導体装置用金属膜研磨スラリ―

Info

Publication number
JP2000038573A
JP2000038573A JP11515899A JP11515899A JP2000038573A JP 2000038573 A JP2000038573 A JP 2000038573A JP 11515899 A JP11515899 A JP 11515899A JP 11515899 A JP11515899 A JP 11515899A JP 2000038573 A JP2000038573 A JP 2000038573A
Authority
JP
Japan
Prior art keywords
polishing
alumina
slurry
metal film
fine particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11515899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000038573A5 (https=
Inventor
Fumiyoshi Ono
文善 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP11515899A priority Critical patent/JP2000038573A/ja
Priority to US09/313,356 priority patent/US6475407B2/en
Priority to TW088108083A priority patent/TWI238849B/zh
Priority to KR1019990017816A priority patent/KR100328308B1/ko
Publication of JP2000038573A publication Critical patent/JP2000038573A/ja
Priority to US09/672,776 priority patent/US6770218B1/en
Publication of JP2000038573A5 publication Critical patent/JP2000038573A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP11515899A 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ― Withdrawn JP2000038573A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11515899A JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―
US09/313,356 US6475407B2 (en) 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same
TW088108083A TWI238849B (en) 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same
KR1019990017816A KR100328308B1 (ko) 1998-05-19 1999-05-18 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법
US09/672,776 US6770218B1 (en) 1998-05-19 2000-09-29 Composition for polishing metal on semiconductor wafer and method of using same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-136934 1998-05-19
JP13693498 1998-05-19
JP11515899A JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―

Publications (2)

Publication Number Publication Date
JP2000038573A true JP2000038573A (ja) 2000-02-08
JP2000038573A5 JP2000038573A5 (https=) 2006-07-13

Family

ID=26453731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11515899A Withdrawn JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―

Country Status (3)

Country Link
JP (1) JP2000038573A (https=)
KR (1) KR100328308B1 (https=)
TW (1) TWI238849B (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001047358A (ja) * 1999-05-28 2001-02-20 Nissan Chem Ind Ltd 研磨用組成物
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100447975B1 (ko) * 2001-12-28 2004-09-10 주식회사 하이닉스반도체 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
KR100649807B1 (ko) * 2001-06-29 2006-11-24 주식회사 하이닉스반도체 루테늄 티타늄 나이트라이드의 화학 기계적 연마용 슬러리및 이를 이용한 연마공정
KR100799965B1 (ko) * 2000-07-08 2008-02-01 에포크 머티리얼 컴퍼니, 리미티드 화학-기계적 연마제 조성물 및 연마 방법
WO2009151120A1 (ja) * 2008-06-13 2009-12-17 株式会社 フジミインコーポレーテッド アルミニウム酸化物粒子及びそれを含有する研磨用組成物
WO2011136387A1 (ja) * 2010-04-28 2011-11-03 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法
US8062547B2 (en) 2005-06-03 2011-11-22 K.C. Tech Co., Ltd. CMP slurry, preparation method thereof and method of polishing substrate using the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001047358A (ja) * 1999-05-28 2001-02-20 Nissan Chem Ind Ltd 研磨用組成物
KR100799965B1 (ko) * 2000-07-08 2008-02-01 에포크 머티리얼 컴퍼니, 리미티드 화학-기계적 연마제 조성물 및 연마 방법
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
KR100649807B1 (ko) * 2001-06-29 2006-11-24 주식회사 하이닉스반도체 루테늄 티타늄 나이트라이드의 화학 기계적 연마용 슬러리및 이를 이용한 연마공정
KR100447975B1 (ko) * 2001-12-28 2004-09-10 주식회사 하이닉스반도체 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법
US6797624B2 (en) 2001-12-29 2004-09-28 Hynix Semiconductor Inc. Solution for ruthenium chemical mechanical planarization
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
US8062547B2 (en) 2005-06-03 2011-11-22 K.C. Tech Co., Ltd. CMP slurry, preparation method thereof and method of polishing substrate using the same
WO2009151120A1 (ja) * 2008-06-13 2009-12-17 株式会社 フジミインコーポレーテッド アルミニウム酸化物粒子及びそれを含有する研磨用組成物
JP5204226B2 (ja) * 2008-06-13 2013-06-05 株式会社フジミインコーポレーテッド アルミニウム酸化物粒子及びそれを含有する研磨用組成物
WO2011136387A1 (ja) * 2010-04-28 2011-11-03 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法
CN102869478A (zh) * 2010-04-28 2013-01-09 日本百考基株式会社 蓝宝石研磨用浆液和蓝宝石的研磨方法
JP5919189B2 (ja) * 2010-04-28 2016-05-18 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法

Also Published As

Publication number Publication date
KR100328308B1 (ko) 2002-03-16
TWI238849B (en) 2005-09-01
KR19990088368A (ko) 1999-12-27

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