TWI238849B - Composition for polishing metal on semiconductor wafer and method of using same - Google Patents

Composition for polishing metal on semiconductor wafer and method of using same Download PDF

Info

Publication number
TWI238849B
TWI238849B TW088108083A TW88108083A TWI238849B TW I238849 B TWI238849 B TW I238849B TW 088108083 A TW088108083 A TW 088108083A TW 88108083 A TW88108083 A TW 88108083A TW I238849 B TWI238849 B TW I238849B
Authority
TW
Taiwan
Prior art keywords
polishing
metal film
fine particles
semiconductor substrate
composition
Prior art date
Application number
TW088108083A
Other languages
English (en)
Chinese (zh)
Inventor
Fumiyoshi Ono
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of TWI238849B publication Critical patent/TWI238849B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW088108083A 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same TWI238849B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13693498 1998-05-19
JP11515899A JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―

Publications (1)

Publication Number Publication Date
TWI238849B true TWI238849B (en) 2005-09-01

Family

ID=26453731

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108083A TWI238849B (en) 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same

Country Status (3)

Country Link
JP (1) JP2000038573A (https=)
KR (1) KR100328308B1 (https=)
TW (1) TWI238849B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4557105B2 (ja) * 1999-05-28 2010-10-06 日産化学工業株式会社 研磨用組成物
KR100799965B1 (ko) * 2000-07-08 2008-02-01 에포크 머티리얼 컴퍼니, 리미티드 화학-기계적 연마제 조성물 및 연마 방법
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
KR100447975B1 (ko) * 2001-12-28 2004-09-10 주식회사 하이닉스반도체 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
TWI417245B (zh) * 2008-06-13 2013-12-01 福吉米股份有限公司 氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物
WO2011136387A1 (ja) * 2010-04-28 2011-11-03 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法

Also Published As

Publication number Publication date
JP2000038573A (ja) 2000-02-08
KR100328308B1 (ko) 2002-03-16
KR19990088368A (ko) 1999-12-27

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