KR100327806B1 - 내부전압발생회로 - Google Patents

내부전압발생회로 Download PDF

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Publication number
KR100327806B1
KR100327806B1 KR1019980047073A KR19980047073A KR100327806B1 KR 100327806 B1 KR100327806 B1 KR 100327806B1 KR 1019980047073 A KR1019980047073 A KR 1019980047073A KR 19980047073 A KR19980047073 A KR 19980047073A KR 100327806 B1 KR100327806 B1 KR 100327806B1
Authority
KR
South Korea
Prior art keywords
voltage
power supply
circuit
internal
reference voltage
Prior art date
Application number
KR1019980047073A
Other languages
English (en)
Korean (ko)
Other versions
KR19990081778A (ko
Inventor
도시야 우치다
야스로우 마츠자키
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19990081778A publication Critical patent/KR19990081778A/ko
Application granted granted Critical
Publication of KR100327806B1 publication Critical patent/KR100327806B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Dram (AREA)
KR1019980047073A 1998-04-07 1998-11-04 내부전압발생회로 KR100327806B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09464498A JP3512332B2 (ja) 1998-04-07 1998-04-07 内部電圧発生回路
JP98-094644 1998-04-07

Publications (2)

Publication Number Publication Date
KR19990081778A KR19990081778A (ko) 1999-11-15
KR100327806B1 true KR100327806B1 (ko) 2002-04-17

Family

ID=14115977

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980047073A KR100327806B1 (ko) 1998-04-07 1998-11-04 내부전압발생회로

Country Status (4)

Country Link
US (1) US6078210A (ja)
JP (1) JP3512332B2 (ja)
KR (1) KR100327806B1 (ja)
TW (1) TW392161B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486827B1 (ko) * 2000-11-08 2005-05-03 인피니언 테크놀로지스 아게 내부 배전 전압을 갖는 회로 장치

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US6347367B1 (en) * 1999-01-29 2002-02-12 International Business Machines Corp. Data bus structure for use with multiple memory storage and driver receiver technologies and a method of operating such structures
JP4767386B2 (ja) * 2000-02-28 2011-09-07 富士通セミコンダクター株式会社 内部電圧発生回路
US6380791B1 (en) * 2000-05-16 2002-04-30 National Semiconductor Corporation Circuit including segmented switch array for capacitive loading reduction
JP2002015599A (ja) * 2000-06-27 2002-01-18 Oki Electric Ind Co Ltd 半導体記憶装置
JP2003110948A (ja) 2001-07-27 2003-04-11 Sanyo Electric Co Ltd 撮像装置
JP4248192B2 (ja) 2001-08-01 2009-04-02 三洋電機株式会社 画像信号処理装置
JP2003116069A (ja) 2001-08-01 2003-04-18 Sanyo Electric Co Ltd 画像信号処理装置
US6680652B2 (en) * 2001-08-06 2004-01-20 Rf Micro Devices, Inc. Load switching for transmissions with different peak-to-average power ratios
JP4301760B2 (ja) * 2002-02-26 2009-07-22 株式会社ルネサステクノロジ 半導体装置
DE10226057B3 (de) * 2002-06-12 2004-02-12 Infineon Technologies Ag Integrierte Schaltung mit Spannungsteiler und gepuffertem Kondensator
KR100451992B1 (ko) * 2002-07-11 2004-10-08 주식회사 하이닉스반도체 반도체 메모리 소자의 전압 발생 회로
US6903588B2 (en) * 2003-04-15 2005-06-07 Broadcom Corporation Slew rate controlled output buffer
KR100545711B1 (ko) * 2003-07-29 2006-01-24 주식회사 하이닉스반도체 퓨즈트리밍을 이용하여 다양한 레벨의 기준전압을 출력할수 있는 기준전압 발생회로
US6894937B2 (en) * 2003-09-26 2005-05-17 Freescale Semiconductor, Inc. Accelerated life test of MRAM cells
US20060082412A1 (en) * 2004-10-20 2006-04-20 D Angelo Kevin P Single, multiplexed operational amplifier to improve current matching between channels
US7248102B2 (en) * 2005-01-20 2007-07-24 Infineon Technologies Ag Internal reference voltage generation for integrated circuit testing
US7215186B2 (en) * 2005-04-18 2007-05-08 Advanced Analogic Technologies, Inc. Method for operational amplifier sharing between channels
KR100703885B1 (ko) * 2005-07-18 2007-04-06 삼성전자주식회사 외부 공급 전압으로부터 적응적으로 내부 전압을 발생하는장치 및 그 방법
JP4752076B2 (ja) * 2006-01-10 2011-08-17 セイコーエプソン株式会社 基準電圧回路及び集積回路装置
EP1811653A1 (en) * 2006-01-20 2007-07-25 Stmicroelectronics SA Amplifier input switch configuration with improved PSRR
EP1811654A1 (en) * 2006-01-20 2007-07-25 Stmicroelectronics SA Amplifier feedback switch configuration with improved PSRR
JP2007213706A (ja) 2006-02-09 2007-08-23 Renesas Technology Corp 半導体装置
KR100855969B1 (ko) * 2007-01-10 2008-09-02 삼성전자주식회사 반도체 메모리장치의 내부 전원전압 발생기
JP5571303B2 (ja) * 2008-10-31 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP6578757B2 (ja) * 2015-06-23 2019-09-25 セイコーエプソン株式会社 電源電圧検出回路、半導体集積回路装置、及び、電子機器
JP6764331B2 (ja) * 2016-12-16 2020-09-30 ルネサスエレクトロニクス株式会社 電圧監視回路および半導体装置
JP7419769B2 (ja) * 2019-06-18 2024-01-23 富士電機株式会社 半導体装置およびその試験方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226075A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742384A (en) * 1971-06-07 1973-06-26 Texas Instruments Inc Variable frequency oscillator
US4479097A (en) * 1981-12-24 1984-10-23 Mostek Corporation Low voltage, low power RC oscillator circuit
JPH03201818A (ja) * 1989-12-28 1991-09-03 Fujitsu Ltd 比較回路
US5703529A (en) * 1995-10-13 1997-12-30 National Semiconductor Corporation Amplifier circuit with reduced DC power related transients
JP3516556B2 (ja) * 1996-08-02 2004-04-05 沖電気工業株式会社 内部電源回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226075A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486827B1 (ko) * 2000-11-08 2005-05-03 인피니언 테크놀로지스 아게 내부 배전 전압을 갖는 회로 장치

Also Published As

Publication number Publication date
KR19990081778A (ko) 1999-11-15
TW392161B (en) 2000-06-01
JP3512332B2 (ja) 2004-03-29
US6078210A (en) 2000-06-20
JPH11296241A (ja) 1999-10-29

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