KR100321325B1 - 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 - Google Patents

플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 Download PDF

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Publication number
KR100321325B1
KR100321325B1 KR1019940022983A KR19940022983A KR100321325B1 KR 100321325 B1 KR100321325 B1 KR 100321325B1 KR 1019940022983 A KR1019940022983 A KR 1019940022983A KR 19940022983 A KR19940022983 A KR 19940022983A KR 100321325 B1 KR100321325 B1 KR 100321325B1
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KR
South Korea
Prior art keywords
plasma
microwave
microwaves
cavity
plasma generation
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019940022983A
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English (en)
Korean (ko)
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KR950010714A (ko
Inventor
와따나베가쯔야
가지데쯔노리
다무라나오유끼
나까따겐지
시찌다히로유끼
와따나베세이이찌
오꾸다이라사다유끼
스즈끼게이조우
Original Assignee
가나이 쓰도무
가부시끼가이샤 히다치 세이사꾸쇼
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Publication date
Priority claimed from JP13012594A external-priority patent/JP3208995B2/ja
Application filed by 가나이 쓰도무, 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가나이 쓰도무
Publication of KR950010714A publication Critical patent/KR950010714A/ko
Application granted granted Critical
Publication of KR100321325B1 publication Critical patent/KR100321325B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1019940022983A 1993-09-17 1994-09-13 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 Expired - Fee Related KR100321325B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP93-231274 1993-09-17
JP23127493 1993-09-17
JP93-334961 1993-12-28
JP33496193 1993-12-28
JP94-130125 1994-06-13
JP13012594A JP3208995B2 (ja) 1994-06-13 1994-06-13 プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
KR950010714A KR950010714A (ko) 1995-04-28
KR100321325B1 true KR100321325B1 (ko) 2002-06-20

Family

ID=27316061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940022983A Expired - Fee Related KR100321325B1 (ko) 1993-09-17 1994-09-13 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치

Country Status (5)

Country Link
US (1) US5580420A (enExample)
EP (1) EP0644575B1 (enExample)
KR (1) KR100321325B1 (enExample)
DE (1) DE69421872T2 (enExample)
TW (1) TW264601B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714009A (en) * 1995-01-11 1998-02-03 Deposition Sciences, Inc. Apparatus for generating large distributed plasmas by means of plasma-guided microwave power
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
JP3368159B2 (ja) * 1996-11-20 2003-01-20 東京エレクトロン株式会社 プラズマ処理装置
US6066568A (en) * 1997-05-14 2000-05-23 Tokyo Electron Limited Plasma treatment method and system
WO1998058099A1 (de) * 1997-06-13 1998-12-23 Balzers Hochvakuum Ag Verfahren zur herstellung beschichteter werkstücke, verwendungen des verfahrens und anlage hierfür
WO1999019526A2 (en) * 1997-10-15 1999-04-22 Tokyo Electron Limited Apparatus and method for adjusting density distribution of a plasma
DE10010766B4 (de) * 2000-03-04 2006-11-30 Schott Ag Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
TW551782U (en) * 2002-10-09 2003-09-01 Ind Tech Res Inst Microwave plasma processing device
ATE484607T1 (de) * 2003-04-16 2010-10-15 Toyo Seikan Kaisha Ltd Mikrowellenplasmaverarbeitungsverfahren
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
WO2006097804A2 (en) 2005-02-28 2006-09-21 Epispeed S.A. System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
KR100980529B1 (ko) 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4585574B2 (ja) * 2008-02-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20110174213A1 (en) * 2008-10-03 2011-07-21 Veeco Compound Semiconductor, Inc. Vapor Phase Epitaxy System
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
US9763287B2 (en) * 2011-11-30 2017-09-12 Michael R. Knox Single mode microwave device for producing exfoliated graphite
JP2014154421A (ja) * 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
JP2014160557A (ja) * 2013-02-19 2014-09-04 Tokyo Electron Ltd プラズマ処理装置
KR101427720B1 (ko) * 2013-03-27 2014-08-13 (주)트리플코어스코리아 단차부 및 블록부를 이용한 플라즈마 도파관
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP2016009711A (ja) * 2014-06-23 2016-01-18 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2021044622A1 (ja) 2019-09-06 2021-03-11 キヤノンアネルバ株式会社 ロードロック装置
US11328931B1 (en) * 2021-02-12 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62294181A (ja) * 1986-06-13 1987-12-21 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜の形成方法及び装置
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
JPH01107538A (ja) * 1987-10-21 1989-04-25 Hitachi Ltd マイクロ波プラズマ処理方法及び装置
KR960014434B1 (ko) * 1987-12-09 1996-10-15 후세 노보루 플라즈마 처리장치
KR900013579A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 마이크로파 플라즈마 처리방법 및 장치
JPH02230728A (ja) * 1989-03-03 1990-09-13 Hitachi Ltd プラズマ処理方法及び装置
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
JP2595128B2 (ja) * 1990-10-31 1997-03-26 株式会社日立製作所 マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
KR950010714A (ko) 1995-04-28
DE69421872T2 (de) 2000-07-20
EP0644575A1 (en) 1995-03-22
US5580420A (en) 1996-12-03
DE69421872D1 (de) 2000-01-05
TW264601B (enExample) 1995-12-01
EP0644575B1 (en) 1999-12-01

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