DE69421872T2 - Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät - Google Patents
Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerätInfo
- Publication number
- DE69421872T2 DE69421872T2 DE69421872T DE69421872T DE69421872T2 DE 69421872 T2 DE69421872 T2 DE 69421872T2 DE 69421872 T DE69421872 T DE 69421872T DE 69421872 T DE69421872 T DE 69421872T DE 69421872 T2 DE69421872 T2 DE 69421872T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- microwave
- microwaves
- cylindrical cavity
- generating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000012545 processing Methods 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 230000000644 propagated effect Effects 0.000 claims description 9
- 230000001902 propagating effect Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 2
- 230000035515 penetration Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 44
- 150000002500 ions Chemical class 0.000 description 38
- 238000005530 etching Methods 0.000 description 31
- 230000032258 transport Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000011068 loading method Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000012805 post-processing Methods 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000010453 quartz Substances 0.000 description 16
- 238000012546 transfer Methods 0.000 description 14
- 229920006395 saturated elastomer Polymers 0.000 description 13
- 239000007921 spray Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005672 electromagnetic field Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910015844 BCl3 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009790 rate-determining step (RDS) Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 239000012495 reaction gas Substances 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32275—Microwave reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23127493 | 1993-09-17 | ||
| JP33496193 | 1993-12-28 | ||
| JP13012594A JP3208995B2 (ja) | 1994-06-13 | 1994-06-13 | プラズマ処理方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69421872D1 DE69421872D1 (de) | 2000-01-05 |
| DE69421872T2 true DE69421872T2 (de) | 2000-07-20 |
Family
ID=27316061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69421872T Expired - Fee Related DE69421872T2 (de) | 1993-09-17 | 1994-09-16 | Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5580420A (enExample) |
| EP (1) | EP0644575B1 (enExample) |
| KR (1) | KR100321325B1 (enExample) |
| DE (1) | DE69421872T2 (enExample) |
| TW (1) | TW264601B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714009A (en) * | 1995-01-11 | 1998-02-03 | Deposition Sciences, Inc. | Apparatus for generating large distributed plasmas by means of plasma-guided microwave power |
| JPH0936198A (ja) | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| JP3368159B2 (ja) * | 1996-11-20 | 2003-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6066568A (en) * | 1997-05-14 | 2000-05-23 | Tokyo Electron Limited | Plasma treatment method and system |
| EP0988407B9 (de) * | 1997-06-13 | 2004-12-15 | Unaxis Trading AG | Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind |
| JP2001520452A (ja) * | 1997-10-15 | 2001-10-30 | 東京エレクトロン株式会社 | プラズマの密度分布を調節する装置及び方法 |
| DE10010766B4 (de) * | 2000-03-04 | 2006-11-30 | Schott Ag | Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten |
| TW551782U (en) * | 2002-10-09 | 2003-09-01 | Ind Tech Res Inst | Microwave plasma processing device |
| CN100447297C (zh) * | 2003-04-16 | 2008-12-31 | 东洋制罐株式会社 | 微波等离子体处理方法 |
| KR20050079860A (ko) * | 2004-02-07 | 2005-08-11 | 삼성전자주식회사 | 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법 |
| AU2006224282B2 (en) | 2005-02-28 | 2012-02-02 | Sulzer Metco Ag | System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| US8006640B2 (en) | 2006-03-27 | 2011-08-30 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP4585574B2 (ja) * | 2008-02-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US20110174213A1 (en) * | 2008-10-03 | 2011-07-21 | Veeco Compound Semiconductor, Inc. | Vapor Phase Epitaxy System |
| US20120186747A1 (en) * | 2011-01-26 | 2012-07-26 | Obama Shinji | Plasma processing apparatus |
| US9763287B2 (en) * | 2011-11-30 | 2017-09-12 | Michael R. Knox | Single mode microwave device for producing exfoliated graphite |
| JP2014154421A (ja) * | 2013-02-12 | 2014-08-25 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理方法、および高周波発生器 |
| JP2014157758A (ja) * | 2013-02-18 | 2014-08-28 | Sumitomo Heavy Ind Ltd | マイクロ波イオン源及びその起動方法 |
| JP2014160557A (ja) * | 2013-02-19 | 2014-09-04 | Tokyo Electron Ltd | プラズマ処理装置 |
| KR101427720B1 (ko) * | 2013-03-27 | 2014-08-13 | (주)트리플코어스코리아 | 단차부 및 블록부를 이용한 플라즈마 도파관 |
| US10950421B2 (en) * | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| JP2016009711A (ja) * | 2014-06-23 | 2016-01-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| WO2021044622A1 (ja) | 2019-09-06 | 2021-03-11 | キヤノンアネルバ株式会社 | ロードロック装置 |
| US11328931B1 (en) * | 2021-02-12 | 2022-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62294181A (ja) * | 1986-06-13 | 1987-12-21 | Canon Inc | マイクロ波プラズマｃｖｄ法による機能性堆積膜の形成方法及び装置 |
| US4866346A (en) * | 1987-06-22 | 1989-09-12 | Applied Science & Technology, Inc. | Microwave plasma generator |
| JPH01107538A (ja) * | 1987-10-21 | 1989-04-25 | Hitachi Ltd | マイクロ波プラズマ処理方法及び装置 |
| KR960014434B1 (ko) * | 1987-12-09 | 1996-10-15 | 후세 노보루 | 플라즈마 처리장치 |
| KR900013579A (ko) * | 1989-02-15 | 1990-09-06 | 미다 가쓰시게 | 마이크로파 플라즈마 처리방법 및 장치 |
| JPH02230728A (ja) * | 1989-03-03 | 1990-09-13 | Hitachi Ltd | プラズマ処理方法及び装置 |
| DE69017744T2 (de) * | 1989-04-27 | 1995-09-14 | Fuji Electric Co Ltd | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas. |
| JP2595128B2 (ja) * | 1990-10-31 | 1997-03-26 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
-
1994
- 1994-09-13 TW TW083108449A patent/TW264601B/zh active
- 1994-09-13 KR KR1019940022983A patent/KR100321325B1/ko not_active Expired - Fee Related
- 1994-09-16 EP EP94114598A patent/EP0644575B1/en not_active Expired - Lifetime
- 1994-09-16 DE DE69421872T patent/DE69421872T2/de not_active Expired - Fee Related
- 1994-09-16 US US08/307,272 patent/US5580420A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR950010714A (ko) | 1995-04-28 |
| EP0644575B1 (en) | 1999-12-01 |
| KR100321325B1 (ko) | 2002-06-20 |
| EP0644575A1 (en) | 1995-03-22 |
| TW264601B (enExample) | 1995-12-01 |
| DE69421872D1 (de) | 2000-01-05 |
| US5580420A (en) | 1996-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |