KR100320398B1 - 반도체장치의제어회로 - Google Patents

반도체장치의제어회로 Download PDF

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Publication number
KR100320398B1
KR100320398B1 KR1019950017768A KR19950017768A KR100320398B1 KR 100320398 B1 KR100320398 B1 KR 100320398B1 KR 1019950017768 A KR1019950017768 A KR 1019950017768A KR 19950017768 A KR19950017768 A KR 19950017768A KR 100320398 B1 KR100320398 B1 KR 100320398B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
gate
signal
npn transistor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950017768A
Other languages
English (en)
Korean (ko)
Other versions
KR960003093A (ko
Inventor
가와까미히로유끼
데라사와노리호
Original Assignee
다쯔타 도키오
후지 덴키 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다쯔타 도키오, 후지 덴키 가부시끼가이샤 filed Critical 다쯔타 도키오
Publication of KR960003093A publication Critical patent/KR960003093A/ko
Application granted granted Critical
Publication of KR100320398B1 publication Critical patent/KR100320398B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
KR1019950017768A 1994-06-29 1995-06-28 반도체장치의제어회로 Expired - Fee Related KR100320398B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP06147222A JP3123349B2 (ja) 1994-06-29 1994-06-29 半導体装置の制御回路
JP94-147222 1994-06-29

Publications (2)

Publication Number Publication Date
KR960003093A KR960003093A (ko) 1996-01-26
KR100320398B1 true KR100320398B1 (ko) 2002-04-22

Family

ID=15425338

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017768A Expired - Fee Related KR100320398B1 (ko) 1994-06-29 1995-06-28 반도체장치의제어회로

Country Status (6)

Country Link
US (1) US5625312A (enExample)
EP (1) EP0690572B1 (enExample)
JP (1) JP3123349B2 (enExample)
KR (1) KR100320398B1 (enExample)
DE (1) DE69529494T2 (enExample)
TW (1) TW267274B (enExample)

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JPH0946141A (ja) * 1995-07-27 1997-02-14 Nec Eng Ltd バイアス回路
DE19610895A1 (de) * 1996-03-20 1997-09-25 Abb Research Ltd Verfahren zur Einschaltregelung eines IGBTs und Vorrichtung zur Durchführung des Verfahrens
JP3566805B2 (ja) * 1996-04-11 2004-09-15 日本原子力研究所 摺動部材
JPH1051285A (ja) * 1996-05-28 1998-02-20 Mitsubishi Electric Corp 電圧制御型トランジスタの駆動回路
JPH10754A (ja) * 1996-06-17 1998-01-06 Shinohara Tekkosho:Kk 枚葉式印刷機の版胴
CA2232199C (en) * 1997-04-22 2000-02-22 Kabushiki Kaisha Toshiba Power converter with voltage drive switching element
AU727159B2 (en) * 1997-04-22 2000-12-07 Kabushiki Kaisha Toshiba Power converter
DE19717012B4 (de) * 1997-04-23 2006-03-16 Robert Bosch Gmbh Elektronische Schaltung
US5834964A (en) * 1997-06-02 1998-11-10 Cherry Semiconductor Corporation Lateral PNP fast turn-on circuit
JP3409994B2 (ja) * 1997-06-20 2003-05-26 株式会社東芝 自己消弧形素子駆動回路
JP3432425B2 (ja) 1998-08-05 2003-08-04 株式会社東芝 ゲート回路
JP3666843B2 (ja) 1999-02-26 2005-06-29 株式会社東芝 絶縁ゲート型半導体素子のゲート回路
US6377088B1 (en) * 2000-07-21 2002-04-23 Semiconductor Components Industries Llc Sharp transition push-pull drive circuit with switching signal input circuit
JP2004215458A (ja) * 2003-01-08 2004-07-29 Mitsubishi Electric Corp 半導体スイッチング素子の駆動回路
JP3799341B2 (ja) * 2003-07-25 2006-07-19 株式会社東芝 ゲート駆動回路及び半導体装置
US7061301B2 (en) 2003-12-19 2006-06-13 Power Integrations, Inc. Method and apparatus switching a semiconductor switch with a multi-state drive circuit
US7330017B2 (en) * 2004-01-29 2008-02-12 Enpirion, Inc. Driver for a power converter and a method of driving a switch thereof
JP2005218068A (ja) * 2004-02-02 2005-08-11 Nippon Precision Circuits Inc 半導体スイッチング回路
JP4144541B2 (ja) * 2004-03-19 2008-09-03 日産自動車株式会社 電圧駆動型半導体素子用駆動回路
JP2006141078A (ja) * 2004-11-10 2006-06-01 Mitsubishi Electric Corp 駆動回路と電力用半導体装置
US7746155B2 (en) * 2005-03-30 2010-06-29 Texas Instruments Incorporated Circuit and method for transistor turn-off with strong pulldown
JP2006296119A (ja) * 2005-04-13 2006-10-26 Nichicon Corp 半導体スイッチング素子の駆動回路
JP2007028278A (ja) * 2005-07-19 2007-02-01 Denso Corp 駆動回路
US7521907B2 (en) 2006-03-06 2009-04-21 Enpirion, Inc. Controller for a power converter and method of operating the same
DE602006003564D1 (de) * 2006-07-05 2008-12-18 Infineon Technologies Ag MOS-Transistorschaltung mit gesteuerter Anstiegszeit
US7893676B2 (en) * 2006-07-20 2011-02-22 Enpirion, Inc. Driver for switch and a method of driving the same
US7948280B2 (en) * 2006-10-20 2011-05-24 Enpirion, Inc. Controller including a sawtooth generator and method of operating the same
JP2007166655A (ja) * 2007-02-05 2007-06-28 Hitachi Ltd 電力用半導体素子の駆動装置
US7570098B2 (en) * 2007-09-27 2009-08-04 Niko Semiconductor Co., Ltd. Active voltage-clamping gate driving circuit
US7876080B2 (en) * 2007-12-27 2011-01-25 Enpirion, Inc. Power converter with monotonic turn-on for pre-charged output capacitor
US8686698B2 (en) 2008-04-16 2014-04-01 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8541991B2 (en) * 2008-04-16 2013-09-24 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US7679342B2 (en) * 2008-04-16 2010-03-16 Enpirion, Inc. Power converter with power switch operable in controlled current mode
US8410769B2 (en) * 2008-04-16 2013-04-02 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8692532B2 (en) * 2008-04-16 2014-04-08 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US9246390B2 (en) 2008-04-16 2016-01-26 Enpirion, Inc. Power converter with controller operable in selected modes of operation
JP5195220B2 (ja) * 2008-09-22 2013-05-08 株式会社デンソー 電力変換回路の駆動回路
US9548714B2 (en) * 2008-12-29 2017-01-17 Altera Corporation Power converter with a dynamically configurable controller and output filter
US8698463B2 (en) * 2008-12-29 2014-04-15 Enpirion, Inc. Power converter with a dynamically configurable controller based on a power conversion mode
AU2010247781A1 (en) 2009-05-11 2011-11-24 Power Integrations, Inc. Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
JP5282782B2 (ja) * 2010-12-14 2013-09-04 株式会社デンソー スイッチング素子の駆動回路
US8867295B2 (en) 2010-12-17 2014-10-21 Enpirion, Inc. Power converter for a memory module
KR101297460B1 (ko) * 2012-04-24 2013-08-16 엘에스산전 주식회사 게이트 구동 장치
JP5673634B2 (ja) 2012-09-24 2015-02-18 株式会社デンソー 駆動対象スイッチング素子の駆動回路
DE102014108576B4 (de) * 2014-06-18 2024-01-18 Sma Solar Technology Ag Treiberschaltung mit Miller-Clamping-Funktionalität für Leistungshalbleiterschalter, Leistungshalbleiterschalter und Wechselrichterbrücke
US9509217B2 (en) 2015-04-20 2016-11-29 Altera Corporation Asymmetric power flow controller for a power converter and method of operating the same
CN105048790B (zh) * 2015-07-22 2017-12-05 深圳市稳先微电子有限公司 功率管控制系统和用于驱动外置功率管的驱动电路
CN109605481B (zh) * 2018-12-10 2021-02-02 无锡百得包装材料有限公司 高速模切机电磁线圈控制电路
US10790818B1 (en) * 2019-09-27 2020-09-29 Infineon Technologies Austria Ag Slew rate control by adaptation of the gate drive voltage of a power transistor
US11038502B1 (en) * 2020-03-23 2021-06-15 Texas Instruments Incorporated Methods, apparatus, and systems to drive a transistor
CN114323089B (zh) * 2020-10-12 2025-02-25 群创光电股份有限公司 光检测元件

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EP0101751B1 (de) * 1982-08-25 1991-08-21 Ibm Deutschland Gmbh Transistor-Leistungsverstärker mit verringerten Schaltzeiten
US4488068A (en) * 1982-09-28 1984-12-11 Eaton Corporation Bidirectional drain to drain stacked FET gating circuit
GB2169409B (en) * 1985-01-04 1988-11-02 Arnall Harry Leslie A caliper
US4859927A (en) * 1988-10-28 1989-08-22 Fisher Scientific Company Power supply with improved switching regulator
US5027016A (en) * 1988-12-29 1991-06-25 Motorola, Inc. Low power transient suppressor circuit
EP0487964A3 (en) * 1990-11-29 1993-08-18 Siemens Aktiengesellschaft Circuit arrangement for protecting a field-effect-controlled semiconductor against overload

Also Published As

Publication number Publication date
EP0690572B1 (en) 2003-01-29
EP0690572A3 (en) 1997-02-26
DE69529494D1 (de) 2003-03-06
JP3123349B2 (ja) 2001-01-09
JPH0818423A (ja) 1996-01-19
TW267274B (enExample) 1996-01-01
KR960003093A (ko) 1996-01-26
US5625312A (en) 1997-04-29
EP0690572A2 (en) 1996-01-03
DE69529494T2 (de) 2003-06-05

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