KR100309630B1 - 반도체장치제조방법 - Google Patents

반도체장치제조방법 Download PDF

Info

Publication number
KR100309630B1
KR100309630B1 KR1019960007150A KR19960007150A KR100309630B1 KR 100309630 B1 KR100309630 B1 KR 100309630B1 KR 1019960007150 A KR1019960007150 A KR 1019960007150A KR 19960007150 A KR19960007150 A KR 19960007150A KR 100309630 B1 KR100309630 B1 KR 100309630B1
Authority
KR
South Korea
Prior art keywords
wiring
film
forming
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960007150A
Other languages
English (en)
Korean (ko)
Inventor
아키라 수가와라
도시미쯔 코누마
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마자끼 순페이, 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 야마자끼 순페이
Application granted granted Critical
Publication of KR100309630B1 publication Critical patent/KR100309630B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019960007150A 1995-03-13 1996-03-13 반도체장치제조방법 Expired - Fee Related KR100309630B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-80755 1995-03-13
JP7080755A JPH08250746A (ja) 1995-03-13 1995-03-13 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
KR100309630B1 true KR100309630B1 (ko) 2002-06-20

Family

ID=13727234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960007150A Expired - Fee Related KR100309630B1 (ko) 1995-03-13 1996-03-13 반도체장치제조방법

Country Status (5)

Country Link
US (1) US5849604A (enExample)
JP (1) JPH08250746A (enExample)
KR (1) KR100309630B1 (enExample)
CN (1) CN1092840C (enExample)
TW (1) TW293174B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101333505B1 (ko) * 2005-11-09 2013-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스를 제조하는 방법

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725266B2 (ja) 1996-11-07 2005-12-07 株式会社半導体エネルギー研究所 配線形成方法
AU9652098A (en) * 1997-11-18 1999-06-07 Mitsubishi Chemical Corporation Chemical conversion fluid for forming metal oxide film
JP4363684B2 (ja) 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
US6433473B1 (en) 1998-10-29 2002-08-13 Candescent Intellectual Property Services, Inc. Row electrode anodization
TW469484B (en) * 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
US7230965B2 (en) * 2001-02-01 2007-06-12 Cymer, Inc. Anodes for fluorine gas discharge lasers
US6930053B2 (en) * 2002-03-25 2005-08-16 Sanyo Electric Co., Ltd. Method of forming grating microstructures by anodic oxidation
JP2008511985A (ja) * 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノ構造体及びそれを製造する方法
JP4237161B2 (ja) * 2005-05-09 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
EP2377131A2 (en) 2008-12-23 2011-10-19 3M Innovative Properties Company Electrical connections for anodized thin film structures
US9252053B2 (en) * 2014-01-16 2016-02-02 International Business Machines Corporation Self-aligned contact structure
CN104461142B (zh) * 2014-12-10 2017-06-30 京东方科技集团股份有限公司 触控显示基板及其制备方法、触控显示装置
CN104966674A (zh) * 2015-07-09 2015-10-07 京东方科技集团股份有限公司 薄膜晶体管和阵列基板的制备方法及相关装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210420A (ja) * 1989-02-10 1990-08-21 Hitachi Ltd 液晶パネルの製造方法
US5359206A (en) * 1989-08-14 1994-10-25 Hitachi, Ltd. Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879219A (en) * 1980-09-19 1989-11-07 General Hospital Corporation Immunoassay utilizing monoclonal high affinity IgM antibodies
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
JPH0816758B2 (ja) * 1989-02-17 1996-02-21 松下電器産業株式会社 液晶画像表示装置およびその製造方法
JPH0772780B2 (ja) * 1989-03-06 1995-08-02 日本電気株式会社 薄膜トランジスタアレイ基板
US5576225A (en) * 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation
US5532853A (en) * 1993-03-04 1996-07-02 Samsung Electronics Co., Ltd. Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line
KR950019817A (ko) * 1993-12-17 1995-07-24 이헌조 액정모듈의 수분방지용 패드

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210420A (ja) * 1989-02-10 1990-08-21 Hitachi Ltd 液晶パネルの製造方法
US5359206A (en) * 1989-08-14 1994-10-25 Hitachi, Ltd. Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101333505B1 (ko) * 2005-11-09 2013-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스를 제조하는 방법

Also Published As

Publication number Publication date
JPH08250746A (ja) 1996-09-27
CN1137170A (zh) 1996-12-04
CN1092840C (zh) 2002-10-16
US5849604A (en) 1998-12-15
TW293174B (enExample) 1996-12-11

Similar Documents

Publication Publication Date Title
US6015724A (en) Manufacturing method of a semiconductor device
KR100339644B1 (ko) 반도체장치
JP4999799B2 (ja) 半導体装置の作製方法
US6091120A (en) Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers
KR19990088504A (ko) 박막트랜지스터및그제조방법
KR100309630B1 (ko) 반도체장치제조방법
JPH0669233A (ja) 半導体装置の製造方法
JP3842852B2 (ja) 半導体装置の作製方法
US5880038A (en) Method for producing semiconductor device
KR100302188B1 (ko) 비휘발성 반도체 소자 제조방법
JP3260975B2 (ja) 半導体装置の作製方法
KR100544115B1 (ko) 박막트랜지스터 제조방법
KR100268776B1 (ko) 반도체 소자 제조방법
JPH07321337A (ja) 半導体集積回路およびその作製方法
KR0139322B1 (ko) 절연게이트형 박막트랜지스터
KR100250748B1 (ko) 반도체 소자의 스택 캐패시터 형성 방법
JPH09199474A (ja) 半導体装置の作製方法
JP2004064056A (ja) 半導体集積回路の作製方法
JPH05315329A (ja) アルミニウム配線または電極の形成方法および薄膜トランジスタマトリックスの製造方法
JPH09186101A (ja) 半導体装置の作製方法
KR20020050423A (ko) 반도체 소자의 캐패시터 제조 방법
JP2002237595A (ja) 薄膜トランジスタの製造方法
JPH10163502A (ja) 半導体装置及びその作製方法
KR19990015596A (ko) 게이트 스페이서 형성공정에서 언더컷을 억제한 트랜지스터제조방법
KR20000027374A (ko) 반도체 소자의 콘택 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040911

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040911

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000