TW293174B - - Google Patents

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Publication number
TW293174B
TW293174B TW085102442A TW85102442A TW293174B TW 293174 B TW293174 B TW 293174B TW 085102442 A TW085102442 A TW 085102442A TW 85102442 A TW85102442 A TW 85102442A TW 293174 B TW293174 B TW 293174B
Authority
TW
Taiwan
Prior art keywords
winding
film
gate
electrode
patent application
Prior art date
Application number
TW085102442A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW293174B publication Critical patent/TW293174B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW085102442A 1995-03-13 1996-02-29 TW293174B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7080755A JPH08250746A (ja) 1995-03-13 1995-03-13 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW293174B true TW293174B (enExample) 1996-12-11

Family

ID=13727234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102442A TW293174B (enExample) 1995-03-13 1996-02-29

Country Status (5)

Country Link
US (1) US5849604A (enExample)
JP (1) JPH08250746A (enExample)
KR (1) KR100309630B1 (enExample)
CN (1) CN1092840C (enExample)
TW (1) TW293174B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725266B2 (ja) 1996-11-07 2005-12-07 株式会社半導体エネルギー研究所 配線形成方法
AU9652098A (en) * 1997-11-18 1999-06-07 Mitsubishi Chemical Corporation Chemical conversion fluid for forming metal oxide film
JP4363684B2 (ja) 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
US6433473B1 (en) 1998-10-29 2002-08-13 Candescent Intellectual Property Services, Inc. Row electrode anodization
TW469484B (en) * 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
US7230965B2 (en) * 2001-02-01 2007-06-12 Cymer, Inc. Anodes for fluorine gas discharge lasers
US6930053B2 (en) * 2002-03-25 2005-08-16 Sanyo Electric Co., Ltd. Method of forming grating microstructures by anodic oxidation
KR101169307B1 (ko) * 2004-08-31 2012-07-30 내셔널 유니버시티 오브 싱가포르 나노구조체 및 그의 제조 방법
JP4237161B2 (ja) * 2005-05-09 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
US7524713B2 (en) * 2005-11-09 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2010074913A2 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Electrical connections for anodized thin film structures
US9252053B2 (en) 2014-01-16 2016-02-02 International Business Machines Corporation Self-aligned contact structure
CN104461142B (zh) * 2014-12-10 2017-06-30 京东方科技集团股份有限公司 触控显示基板及其制备方法、触控显示装置
CN104966674A (zh) 2015-07-09 2015-10-07 京东方科技集团股份有限公司 薄膜晶体管和阵列基板的制备方法及相关装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879219A (en) * 1980-09-19 1989-11-07 General Hospital Corporation Immunoassay utilizing monoclonal high affinity IgM antibodies
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
JP2741883B2 (ja) * 1989-02-10 1998-04-22 株式会社日立製作所 液晶パネルの製造方法
JPH0816758B2 (ja) * 1989-02-17 1996-02-21 松下電器産業株式会社 液晶画像表示装置およびその製造方法
JPH0772780B2 (ja) * 1989-03-06 1995-08-02 日本電気株式会社 薄膜トランジスタアレイ基板
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
US5576225A (en) * 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation
US5532853A (en) * 1993-03-04 1996-07-02 Samsung Electronics Co., Ltd. Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line
KR950019817A (ko) * 1993-12-17 1995-07-24 이헌조 액정모듈의 수분방지용 패드

Also Published As

Publication number Publication date
JPH08250746A (ja) 1996-09-27
CN1092840C (zh) 2002-10-16
KR100309630B1 (ko) 2002-06-20
US5849604A (en) 1998-12-15
CN1137170A (zh) 1996-12-04

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Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees