KR100294165B1 - 레이저어닐방법 - Google Patents

레이저어닐방법 Download PDF

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Publication number
KR100294165B1
KR100294165B1 KR1019960002534A KR19960002534A KR100294165B1 KR 100294165 B1 KR100294165 B1 KR 100294165B1 KR 1019960002534 A KR1019960002534 A KR 1019960002534A KR 19960002534 A KR19960002534 A KR 19960002534A KR 100294165 B1 KR100294165 B1 KR 100294165B1
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KR
South Korea
Prior art keywords
laser beam
linear
irradiated
pulse
energy density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019960002534A
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English (en)
Korean (ko)
Other versions
KR960032596A (ko
Inventor
나오토 구스모토
고이치로 다나카
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Filing date
Publication date
Priority claimed from JP03770595A external-priority patent/JP3587900B2/ja
Priority claimed from JP06867095A external-priority patent/JP3623818B2/ja
Application filed by 야마자끼 순페이, 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 야마자끼 순페이
Publication of KR960032596A publication Critical patent/KR960032596A/ko
Application granted granted Critical
Publication of KR100294165B1 publication Critical patent/KR100294165B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0007—Applications not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Recrystallisation Techniques (AREA)
KR1019960002534A 1995-02-02 1996-02-02 레이저어닐방법 Expired - Lifetime KR100294165B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP03770595A JP3587900B2 (ja) 1995-02-02 1995-02-02 結晶性珪素膜の作製方法
JP95-37705 1995-02-02
JP95-68670 1995-03-02
JP06867095A JP3623818B2 (ja) 1995-03-02 1995-03-02 結晶性珪素膜の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020010002810A Division KR100321001B1 (ko) 1995-02-02 2001-01-18 반도체장치 제작방법

Publications (2)

Publication Number Publication Date
KR960032596A KR960032596A (ko) 1996-09-17
KR100294165B1 true KR100294165B1 (ko) 2001-11-30

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019960002534A Expired - Lifetime KR100294165B1 (ko) 1995-02-02 1996-02-02 레이저어닐방법
KR1020010002810A Expired - Lifetime KR100321001B1 (ko) 1995-02-02 2001-01-18 반도체장치 제작방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
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Country Status (4)

Country Link
US (5) US6596613B1 (https=)
KR (2) KR100294165B1 (https=)
CN (1) CN1134831C (https=)
TW (1) TW305063B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323614B1 (ko) 2009-03-05 2013-11-01 가부시끼가이샤 니혼 세이꼬쇼 결정질막의 제조 방법 및 결정질막 제조 장치
KR101446821B1 (ko) * 2007-02-12 2014-10-02 티씨제트 엘엘씨 레이저 빔 공간 강도 프로파일의 최적화를 위한 시스템 및 방법

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
TW305063B (https=) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
US6902616B1 (en) * 1995-07-19 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for producing semiconductor device
US6856630B2 (en) * 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
CN100355026C (zh) * 2000-10-06 2007-12-12 三菱电机株式会社 多晶态硅膜的制造方法和制造装置
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
JP3977038B2 (ja) * 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US20040195222A1 (en) * 2002-12-25 2004-10-07 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7247527B2 (en) * 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus
AU2003262031A1 (en) * 2003-09-09 2005-04-06 Sumitomo Heavy Industries, Ltd. Laser processing method and processing apparatus
KR100531416B1 (ko) * 2003-09-17 2005-11-29 엘지.필립스 엘시디 주식회사 Ｓｌｓ 장비 및 이를 이용한 실리콘 결정화 방법
CN1315163C (zh) * 2004-03-08 2007-05-09 友达光电股份有限公司 激光退火装置及其激光退火方法
US8927898B2 (en) * 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
DE102007057868B4 (de) * 2007-11-29 2020-02-20 LIMO GmbH Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung
US7807576B2 (en) * 2008-06-20 2010-10-05 Fairchild Semiconductor Corporation Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
CN103117212B (zh) * 2011-09-15 2015-07-08 清华大学 用于复杂结构半导体器件的激光退火方法
US9472776B2 (en) 2011-10-14 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sealed structure including welded glass frits
JP2013101923A (ja) 2011-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd 分散組成物の加熱方法、及びガラスパターンの形成方法
JP5788855B2 (ja) * 2012-11-20 2015-10-07 株式会社日本製鋼所 レーザ処理方法およびレーザ処理装置
JP5907530B2 (ja) * 2012-11-20 2016-04-26 株式会社日本製鋼所 レーザアニール方法およびレーザアニール装置
US10017410B2 (en) * 2013-10-25 2018-07-10 Rofin-Sinar Technologies Llc Method of fabricating a glass magnetic hard drive disk platter using filamentation by burst ultrafast laser pulses
US10369661B2 (en) 2015-02-25 2019-08-06 Technology Research Association For Future Additive Manufacturing Optical processing head, optical machining apparatus, and optical processing method
KR102636043B1 (ko) 2019-01-21 2024-02-14 삼성디스플레이 주식회사 레이저 에칭 장치와 그것을 이용한 레이저 에칭 방법

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH478043A (de) 1968-01-25 1969-09-15 Monforts Fa A Transportvorrichtung an einer Behandlungsmaschine für bahnförmiges Gut, insbesondere für Textillegemaschinen
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US4195913A (en) 1977-11-09 1980-04-01 Spawr Optical Research, Inc. Optical integration with screw supports
US4475027A (en) 1981-11-17 1984-10-02 Allied Corporation Optical beam homogenizer
ZA836334B (en) 1983-08-26 1984-05-30 Katz Bernard B Method of annealing implanted semiconductors by lasers
JPS6476715A (en) 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
JPH0515850Y2 (https=) 1987-11-06 1993-04-26
JPH01260811A (ja) 1988-04-12 1989-10-18 Nec Corp Ｓｏｉ結晶の形成方法
JP2979227B2 (ja) 1989-02-27 1999-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP3033120B2 (ja) * 1990-04-02 2000-04-17 セイコーエプソン株式会社 半導体薄膜の製造方法
JP2973492B2 (ja) * 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
JP2923016B2 (ja) 1990-09-17 1999-07-26 株式会社日立製作所 薄膜半導体の製造方法及びその装置
US5365875A (en) * 1991-03-25 1994-11-22 Fuji Xerox Co., Ltd. Semiconductor element manufacturing method
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JPH05182923A (ja) 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JP3466633B2 (ja) 1991-06-12 2003-11-17 ソニー株式会社 多結晶半導体層のアニール方法
US5766344A (en) 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH05198507A (ja) 1991-09-21 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体作製方法
KR100269350B1 (ko) * 1991-11-26 2000-10-16 구본준 박막트랜지스터의제조방법
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5643801A (en) 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JPH06244103A (ja) 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
JP3300153B2 (ja) 1993-02-15 2002-07-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
EP1119053B1 (en) 1993-02-15 2011-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating TFT semiconductor device
JP3431682B2 (ja) 1993-03-12 2003-07-28 株式会社半導体エネルギー研究所 半導体回路の作製方法
TW241377B (https=) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5477073A (en) * 1993-08-20 1995-12-19 Casio Computer Co., Ltd. Thin film semiconductor device including a driver and a matrix circuit
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JPH07249591A (ja) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜のレーザーアニール方法及び薄膜半導体素子
JPH0851074A (ja) 1994-08-08 1996-02-20 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
US5569910A (en) * 1994-11-10 1996-10-29 Spacesaver Corporation Photodetector system for detecting obstacles in aisles between mobile shelving carriages
JP3535241B2 (ja) 1994-11-18 2004-06-07 株式会社半導体エネルギー研究所 半導体デバイス及びその作製方法
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW305063B (https=) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JP3587900B2 (ja) 1995-02-02 2004-11-10 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3286518B2 (ja) 1996-01-23 2002-05-27 三洋電機株式会社 ラジオ受信機の電界強度検出回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101446821B1 (ko) * 2007-02-12 2014-10-02 티씨제트 엘엘씨 레이저 빔 공간 강도 프로파일의 최적화를 위한 시스템 및 방법
KR101323614B1 (ko) 2009-03-05 2013-11-01 가부시끼가이샤 니혼 세이꼬쇼 결정질막의 제조 방법 및 결정질막 제조 장치

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US7208358B2 (en) 2007-04-24
US7939435B2 (en) 2011-05-10
TW305063B (https=) 1997-05-11
US7517774B2 (en) 2009-04-14
KR100321001B1 (ko) 2002-01-18
US20040087069A1 (en) 2004-05-06
US20060030166A1 (en) 2006-02-09
US20090186468A1 (en) 2009-07-23
KR960032596A (ko) 1996-09-17
CN1134831C (zh) 2004-01-14
CN1137171A (zh) 1996-12-04
US20070190710A1 (en) 2007-08-16
US6947452B2 (en) 2005-09-20
US6596613B1 (en) 2003-07-22

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