KR100288661B1 - 국부에너지원에 의한 사파이어의 고체 상태의 형성 방법 - Google Patents

국부에너지원에 의한 사파이어의 고체 상태의 형성 방법 Download PDF

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Publication number
KR100288661B1
KR100288661B1 KR1019940010966A KR19940010966A KR100288661B1 KR 100288661 B1 KR100288661 B1 KR 100288661B1 KR 1019940010966 A KR1019940010966 A KR 1019940010966A KR 19940010966 A KR19940010966 A KR 19940010966A KR 100288661 B1 KR100288661 B1 KR 100288661B1
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KR
South Korea
Prior art keywords
pca
sapphire
pca body
energy source
conversion
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Expired - Fee Related
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KR1019940010966A
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English (en)
Korean (ko)
Inventor
이. 맥스웰 랜돌프
에드위드 스코트 커티스
슈 칼리스제프스키 매리
고든 존스 마샬
몬티 레빈슨 리오넬
에드워드 에릭슨 칼
Original Assignee
제이 엘. 차스킨, 버나드 스나이더
제너럴 일렉트릭 컴파니
아더엠. 킹
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
KR1019940010966A 1993-05-21 1994-05-20 국부에너지원에 의한 사파이어의 고체 상태의 형성 방법 Expired - Fee Related KR100288661B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US064,386 1993-05-21
US08/064,386 US5427051A (en) 1993-05-21 1993-05-21 Solid state formation of sapphire using a localized energy source

Publications (1)

Publication Number Publication Date
KR100288661B1 true KR100288661B1 (ko) 2001-05-02

Family

ID=22055603

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940010966A Expired - Fee Related KR100288661B1 (ko) 1993-05-21 1994-05-20 국부에너지원에 의한 사파이어의 고체 상태의 형성 방법

Country Status (11)

Country Link
US (1) US5427051A (enExample)
EP (1) EP0625594B1 (enExample)
JP (1) JPH0782074A (enExample)
KR (1) KR100288661B1 (enExample)
BR (1) BR9402034A (enExample)
CA (1) CA2122387A1 (enExample)
DE (1) DE69423811T2 (enExample)
ES (1) ES2144487T3 (enExample)
HU (1) HU213445B (enExample)
PL (1) PL174375B1 (enExample)
TW (1) TW291475B (enExample)

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US6126889A (en) * 1998-02-11 2000-10-03 General Electric Company Process of preparing monolithic seal for sapphire CMH lamp
US7297037B2 (en) * 1998-04-28 2007-11-20 General Electric Company Ceramic discharge chamber for a discharge lamp
US6583563B1 (en) 1998-04-28 2003-06-24 General Electric Company Ceramic discharge chamber for a discharge lamp
US6214427B1 (en) 1998-08-28 2001-04-10 General Electric Company Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion
US6299681B1 (en) * 1998-11-27 2001-10-09 General Electric Company Single crystal conversion control
US6126741A (en) * 1998-12-07 2000-10-03 General Electric Company Polycrystalline carbon conversion
US6414436B1 (en) 1999-02-01 2002-07-02 Gem Lighting Llc Sapphire high intensity discharge projector lamp
US6475942B1 (en) * 2000-09-05 2002-11-05 General Electric Company Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping
JPWO2002022920A1 (ja) * 2000-09-18 2004-02-05 第一稀元素化学工業株式会社 希土類−鉄ガーネット単結晶体及びその製造方法
US6873108B2 (en) * 2001-09-14 2005-03-29 Osram Sylvania Inc. Monolithic seal for a sapphire metal halide lamp
US20060071603A1 (en) * 2004-10-04 2006-04-06 Levis Maurice E Ultra high luminance (UHL) lamp with SCA envelope
CN100374626C (zh) * 2005-01-20 2008-03-12 北京工业大学 激光生长蓝宝石晶体的方法及其装置
US8157912B2 (en) 2007-09-11 2012-04-17 Osram Sylvania Inc. Method of converting PCA to sapphire and converted article
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
DE102008053856A1 (de) 2008-10-30 2010-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flexible und infiltrierbare Bündel aus Keramik- oder Metallfasern mit stark vergröbertem Gefüge und Verfahren zu deren Herstellung
WO2011050170A2 (en) * 2009-10-22 2011-04-28 Advanced Renewable Energy Company Llc Crystal growth methods and systems
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
GB2593950A (en) 2020-04-08 2021-10-13 Corning Inc Solid state conversion of polycrystalline material

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US988230A (en) * 1910-05-10 1911-03-28 Heller & Son L Process of producing synthetic sapphires.
US3026210A (en) * 1961-01-03 1962-03-20 Gen Electric Transparent alumina and method of preparation
US3382047A (en) * 1964-12-14 1968-05-07 Ibm Preparing large single crystalline bodies of rare earth chalcogenides
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
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US3944640A (en) * 1970-09-02 1976-03-16 Arthur D. Little, Inc. Method for forming refractory fibers by laser energy
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4058699A (en) * 1975-08-01 1977-11-15 Arthur D. Little, Inc. Radiant zone heating apparatus and method
GB1595518A (en) * 1977-03-11 1981-08-12 Gen Electric Polycrystalline alumina material
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Also Published As

Publication number Publication date
EP0625594A3 (en) 1996-04-03
JPH0782074A (ja) 1995-03-28
HUT67806A (en) 1995-03-14
ES2144487T3 (es) 2000-06-16
DE69423811T2 (de) 2001-02-15
TW291475B (enExample) 1996-11-21
US5427051A (en) 1995-06-27
PL174375B1 (pl) 1998-07-31
BR9402034A (pt) 1994-12-27
EP0625594A2 (en) 1994-11-23
EP0625594B1 (en) 2000-04-05
HU9401426D0 (en) 1994-08-29
DE69423811D1 (de) 2000-05-11
HU213445B (en) 1997-06-30
CA2122387A1 (en) 1994-11-22

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