DE69423811D1 - Feststoff-Verfahren zur Umwandlung von polykristallinen Alumina in einen Saphir - Google Patents

Feststoff-Verfahren zur Umwandlung von polykristallinen Alumina in einen Saphir

Info

Publication number
DE69423811D1
DE69423811D1 DE69423811T DE69423811T DE69423811D1 DE 69423811 D1 DE69423811 D1 DE 69423811D1 DE 69423811 T DE69423811 T DE 69423811T DE 69423811 T DE69423811 T DE 69423811T DE 69423811 D1 DE69423811 D1 DE 69423811D1
Authority
DE
Germany
Prior art keywords
sapphire
polycrystalline alumina
solid process
converting polycrystalline
converting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423811T
Other languages
English (en)
Other versions
DE69423811T2 (de
Inventor
Randolph E Maxwell
Curtis Edward Scott
Mary Sue Kaliszewski
Marshall Gordon Jones
Lionel Monty Levinson
Carl Edward Erikson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE69423811D1 publication Critical patent/DE69423811D1/de
Application granted granted Critical
Publication of DE69423811T2 publication Critical patent/DE69423811T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
DE69423811T 1993-05-21 1994-05-11 Feststoff-Verfahren zur Umwandlung von polykristallinen Alumina in einen Saphir Expired - Fee Related DE69423811T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/064,386 US5427051A (en) 1993-05-21 1993-05-21 Solid state formation of sapphire using a localized energy source

Publications (2)

Publication Number Publication Date
DE69423811D1 true DE69423811D1 (de) 2000-05-11
DE69423811T2 DE69423811T2 (de) 2001-02-15

Family

ID=22055603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423811T Expired - Fee Related DE69423811T2 (de) 1993-05-21 1994-05-11 Feststoff-Verfahren zur Umwandlung von polykristallinen Alumina in einen Saphir

Country Status (11)

Country Link
US (1) US5427051A (de)
EP (1) EP0625594B1 (de)
JP (1) JPH0782074A (de)
KR (1) KR100288661B1 (de)
BR (1) BR9402034A (de)
CA (1) CA2122387A1 (de)
DE (1) DE69423811T2 (de)
ES (1) ES2144487T3 (de)
HU (1) HU213445B (de)
PL (1) PL174375B1 (de)
TW (1) TW291475B (de)

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US5451553A (en) * 1993-09-24 1995-09-19 General Electric Company Solid state thermal conversion of polycrystalline alumina to sapphire
US6126889A (en) 1998-02-11 2000-10-03 General Electric Company Process of preparing monolithic seal for sapphire CMH lamp
US7297037B2 (en) * 1998-04-28 2007-11-20 General Electric Company Ceramic discharge chamber for a discharge lamp
US6583563B1 (en) 1998-04-28 2003-06-24 General Electric Company Ceramic discharge chamber for a discharge lamp
US6214427B1 (en) 1998-08-28 2001-04-10 General Electric Company Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion
US6299681B1 (en) * 1998-11-27 2001-10-09 General Electric Company Single crystal conversion control
US6126741A (en) * 1998-12-07 2000-10-03 General Electric Company Polycrystalline carbon conversion
US6414436B1 (en) 1999-02-01 2002-07-02 Gem Lighting Llc Sapphire high intensity discharge projector lamp
US6475942B1 (en) * 2000-09-05 2002-11-05 General Electric Company Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping
US20030177975A1 (en) * 2000-09-18 2003-09-25 Akio Ikesue Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material
US6873108B2 (en) * 2001-09-14 2005-03-29 Osram Sylvania Inc. Monolithic seal for a sapphire metal halide lamp
US20060071603A1 (en) * 2004-10-04 2006-04-06 Levis Maurice E Ultra high luminance (UHL) lamp with SCA envelope
CN100374626C (zh) * 2005-01-20 2008-03-12 北京工业大学 激光生长蓝宝石晶体的方法及其装置
US8157912B2 (en) 2007-09-11 2012-04-17 Osram Sylvania Inc. Method of converting PCA to sapphire and converted article
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
DE102008053856A1 (de) 2008-10-30 2010-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flexible und infiltrierbare Bündel aus Keramik- oder Metallfasern mit stark vergröbertem Gefüge und Verfahren zu deren Herstellung
WO2011050170A2 (en) * 2009-10-22 2011-04-28 Advanced Renewable Energy Company Llc Crystal growth methods and systems
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
GB2593950A (en) 2020-04-08 2021-10-13 Corning Inc Solid state conversion of polycrystalline material

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US988230A (en) * 1910-05-10 1911-03-28 Heller & Son L Process of producing synthetic sapphires.
US3026210A (en) * 1961-01-03 1962-03-20 Gen Electric Transparent alumina and method of preparation
US3382047A (en) * 1964-12-14 1968-05-07 Ibm Preparing large single crystalline bodies of rare earth chalcogenides
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3564328A (en) * 1968-07-29 1971-02-16 Corning Glass Works Ceramic articles and method of fabrication
US3944640A (en) * 1970-09-02 1976-03-16 Arthur D. Little, Inc. Method for forming refractory fibers by laser energy
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4058699A (en) * 1975-08-01 1977-11-15 Arthur D. Little, Inc. Radiant zone heating apparatus and method
GB1595518A (en) * 1977-03-11 1981-08-12 Gen Electric Polycrystalline alumina material
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
US4248369A (en) * 1979-08-02 1981-02-03 General Electric Company Laser cutting of ceramic tubing
JPS5692190A (en) * 1979-12-27 1981-07-25 Toshiba Ceramics Co Ltd Oxide single crystal body and its production
US4285732A (en) * 1980-03-11 1981-08-25 General Electric Company Alumina ceramic
US4437109A (en) * 1980-11-07 1984-03-13 General Electric Company Silicon-on-sapphire body with conductive paths therethrough
JPS5792591A (en) * 1980-11-28 1982-06-09 Ngk Insulators Ltd Production of single crystal
JPS6221794A (ja) * 1985-07-17 1987-01-30 Matsushima Kogyo Co Ltd 集光加熱装置によるブル−サフアイア単結晶の製造方法
US4629377A (en) * 1985-07-30 1986-12-16 Fellows Corporation Disposable disk cutter
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JPS62278198A (ja) * 1986-05-27 1987-12-03 Matsushima Kogyo Co Ltd 集光フロ−テイングゾ−ン法によるブラツクスタ−サフアイアの製造方法
JPS6311591A (ja) * 1986-07-01 1988-01-19 Matsushita Electric Ind Co Ltd 単結晶セラミクスの製造方法
JPS63117985A (ja) * 1986-11-06 1988-05-21 Matsushita Electric Ind Co Ltd 酸化物単結晶の製造法
DE3834964A1 (de) * 1988-01-27 1989-08-10 Siemens Ag Verfahren zur herstellung mindestens einer schicht aus einem metalloxidischen supraleitermaterial mit hoher sprungtemperatur
US5200370A (en) * 1990-11-16 1993-04-06 Fiber Materials, Inc. Monocrystalline ceramic fibers and method of preparing same

Also Published As

Publication number Publication date
EP0625594A3 (de) 1996-04-03
HU213445B (en) 1997-06-30
BR9402034A (pt) 1994-12-27
HU9401426D0 (en) 1994-08-29
CA2122387A1 (en) 1994-11-22
US5427051A (en) 1995-06-27
JPH0782074A (ja) 1995-03-28
KR100288661B1 (ko) 2001-05-02
EP0625594B1 (de) 2000-04-05
HUT67806A (en) 1995-03-14
ES2144487T3 (es) 2000-06-16
TW291475B (de) 1996-11-21
EP0625594A2 (de) 1994-11-23
PL174375B1 (pl) 1998-07-31
DE69423811T2 (de) 2001-02-15

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee