KR100274944B1 - 박막작성장치 - Google Patents
박막작성장치 Download PDFInfo
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- KR100274944B1 KR100274944B1 KR1019980047995A KR19980047995A KR100274944B1 KR 100274944 B1 KR100274944 B1 KR 100274944B1 KR 1019980047995 A KR1019980047995 A KR 1019980047995A KR 19980047995 A KR19980047995 A KR 19980047995A KR 100274944 B1 KR100274944 B1 KR 100274944B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- substrate
- film
- thin film
- gas
- Prior art date
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- 238000000427 thin-film deposition Methods 0.000 title description 2
- 239000010408 film Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 124
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 239000007789 gas Substances 0.000 claims abstract description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 59
- 238000012545 processing Methods 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 51
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 23
- 238000002407 reforming Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000004048 modification Effects 0.000 claims description 13
- 238000012986 modification Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000006557 surface reaction Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000000197 pyrolysis Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 31
- 238000000151 deposition Methods 0.000 abstract description 22
- 230000008021 deposition Effects 0.000 abstract description 21
- 229910008045 Si-Si Inorganic materials 0.000 abstract description 4
- 229910006411 Si—Si Inorganic materials 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 230000008569 process Effects 0.000 description 52
- 239000002245 particle Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 11
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 10
- 239000000428 dust Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 238000005979 thermal decomposition reaction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- -1 silicon hydrogen compound Chemical class 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Abstract
Description
Claims (6)
- 제 1 재료로 이루어지는 제 1 표면영역 및 제 1 재료와는 다른 제 2 재료로 이루어지는 제 2 표면영역을 갖는 기판을 처리챔버 내에 배치함과 동시에, 이 처리챔버 내에 반응성 가스를 도입하여, 상기 제 1 표면영역과 제 2 표면영역 간의 표면반응의 차이를 이용하여 상기 제 1 표면영역에만 선택적으로 박막을 작성하는 박막작성장치로서, 상기 처리챔버 내의 노출부위의 표면이 상기 제 2 재료로 이루어지도록 개질하거나 또는 제 2 재료에 의한 경우와 같은 표면반응의 차이가 얻어지도록 개질하는 개질용 가스를 상기 처리챔버 내에 도입하는 개질용 가스도입계가 구비되어 있는 특징으로 하는 박막작성장치.
- 제 1 항에 있어서, 상기 개질은, 상기 노출부위의 표면에 석출부착되는 제 1 재료의 원자 또는 분자를 상기 제 2 재료의 원자 또는 분자로 변화시키는 반응을 일으키는 것을 특징으로 하는 박막작성장치.
- 제 1 항에 있어서, 상기 표면반응은 열분해반응속도의 차이를 이용하여 선택적으로 박막을 작성하는 열분해반응이고, 상기 노출부위는 상기 처리챔버 내에서 노출되는 피가열부위인 것을 특징으로 하는 박막작성장치.
- 제 3 항에 있어서, 상기 박막은 실리콘박막이고 상기 반응성 가스는 실리콘의 수소화물의 가스이고, 상기 제 1 재료는 실리콘이고 상기 제 2 재료는 산화실리콘 또는 질화실리콘이고, 또한, 상기 개질용 가스는 산소가스, 질소가스, 산화가스 또는 질화가스인 것을 특징으로 하는 박막작성장치.
- 제 4 항에 있어서, 상기 노출부위의 표면은, 미리 산화처리 또는 질화처리되어 산화막 또는 질화막으로 덮여 있는 것을 특징으로 하는 박막작성장치.
- 제 1 항에 있어서, 상기 기판을 상기 처리챔버 내에서 유지하는 서셉터가 설치되어 있고, 상기 노출부위의 표면은 이 서셉터의 표면인 것을 특징으로 하는 박막작성장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP97-332409 | 1997-11-16 | ||
JP33240997A JP3796030B2 (ja) | 1997-11-16 | 1997-11-16 | 薄膜作成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990045169A KR19990045169A (ko) | 1999-06-25 |
KR100274944B1 true KR100274944B1 (ko) | 2000-12-15 |
Family
ID=18254653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980047995A KR100274944B1 (ko) | 1997-11-16 | 1998-11-10 | 박막작성장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6197118B1 (ko) |
JP (1) | JP3796030B2 (ko) |
KR (1) | KR100274944B1 (ko) |
TW (1) | TW399262B (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3796030B2 (ja) * | 1997-11-16 | 2006-07-12 | キヤノンアネルバ株式会社 | 薄膜作成装置 |
JP4394303B2 (ja) * | 2001-04-11 | 2010-01-06 | 新明和工業株式会社 | 真空ゲート弁 |
KR20020080954A (ko) * | 2001-04-18 | 2002-10-26 | 주성엔지니어링(주) | 냉벽 화학기상증착 방법 및 장치 |
KR100422199B1 (ko) * | 2001-05-04 | 2004-03-12 | 주성엔지니어링(주) | 반도체 소자 제조장치 |
US6344631B1 (en) | 2001-05-11 | 2002-02-05 | Applied Materials, Inc. | Substrate support assembly and processing apparatus |
US20050272271A1 (en) * | 2003-02-07 | 2005-12-08 | Tokyo Electron Limited | Semiconductor processing method for processing substrate to be processed and its apparatus |
JP2008294104A (ja) * | 2007-05-23 | 2008-12-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US8328945B2 (en) * | 2010-03-12 | 2012-12-11 | United Technologies Corporation | Coating apparatus and method with indirect thermal stabilization |
WO2019099103A1 (en) * | 2017-11-15 | 2019-05-23 | Sandisk Technologies Llc | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof |
JP7325350B2 (ja) * | 2020-02-03 | 2023-08-14 | 東京エレクトロン株式会社 | 成膜装置 |
TWI782441B (zh) * | 2020-03-25 | 2022-11-01 | 日商國際電氣股份有限公司 | 基板處理裝置、基板載置台蓋及半導體裝置之製造方法 |
CN112968084A (zh) * | 2021-02-04 | 2021-06-15 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
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US4002512A (en) * | 1974-09-16 | 1977-01-11 | Western Electric Company, Inc. | Method of forming silicon dioxide |
US4379020A (en) * | 1980-06-16 | 1983-04-05 | Massachusetts Institute Of Technology | Polycrystalline semiconductor processing |
JP2861343B2 (ja) | 1990-09-19 | 1999-02-24 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5366917A (en) | 1990-03-20 | 1994-11-22 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
JPH0719777B2 (ja) * | 1990-08-10 | 1995-03-06 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
JP2835891B2 (ja) | 1990-09-21 | 1998-12-14 | アネルバ株式会社 | 薄膜作成方法 |
JP2983084B2 (ja) | 1990-09-21 | 1999-11-29 | アネルバ株式会社 | 薄膜形成方法および、この方法を用いた真空成膜装置 |
TW209253B (ko) | 1990-09-21 | 1993-07-11 | Nidden Aneruba Kk | |
JP2666572B2 (ja) | 1991-01-28 | 1997-10-22 | 日本電気株式会社 | 多結晶シリコン膜の形成方法 |
JP3186077B2 (ja) | 1991-03-08 | 2001-07-11 | 日本電気株式会社 | 多結晶シリコン膜の形成方法 |
JPH04345024A (ja) | 1991-05-22 | 1992-12-01 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2508948B2 (ja) | 1991-06-21 | 1996-06-19 | 日本電気株式会社 | 半導体装置の製造方法 |
US5231056A (en) * | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
JP3332257B2 (ja) | 1993-01-23 | 2002-10-07 | 日本電気株式会社 | 真空処理装置 |
JP3590416B2 (ja) | 1993-11-29 | 2004-11-17 | アネルバ株式会社 | 薄膜形成方法および薄膜形成装置 |
JP3272532B2 (ja) * | 1993-12-27 | 2002-04-08 | 富士通株式会社 | 半導体装置の製造方法 |
JP3489875B2 (ja) | 1994-08-09 | 2004-01-26 | アネルバ株式会社 | 真空処理装置の基板加熱機構 |
JP3796030B2 (ja) * | 1997-11-16 | 2006-07-12 | キヤノンアネルバ株式会社 | 薄膜作成装置 |
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1997
- 1997-11-16 JP JP33240997A patent/JP3796030B2/ja not_active Expired - Lifetime
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- 1998-10-09 TW TW087116787A patent/TW399262B/zh not_active IP Right Cessation
- 1998-11-10 KR KR1019980047995A patent/KR100274944B1/ko not_active IP Right Cessation
- 1998-11-12 US US09/190,130 patent/US6197118B1/en not_active Expired - Lifetime
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KR19990045169A (ko) | 1999-06-25 |
US6197118B1 (en) | 2001-03-06 |
US6486076B1 (en) | 2002-11-26 |
JPH11150073A (ja) | 1999-06-02 |
TW399262B (en) | 2000-07-21 |
JP3796030B2 (ja) | 2006-07-12 |
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