KR100272940B1 - 패턴비교검증장치,패턴비교검증방법및패턴비교검증프로그램을기록한매체 - Google Patents
패턴비교검증장치,패턴비교검증방법및패턴비교검증프로그램을기록한매체 Download PDFInfo
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- KR100272940B1 KR100272940B1 KR1019970019686A KR19970019686A KR100272940B1 KR 100272940 B1 KR100272940 B1 KR 100272940B1 KR 1019970019686 A KR1019970019686 A KR 1019970019686A KR 19970019686 A KR19970019686 A KR 19970019686A KR 100272940 B1 KR100272940 B1 KR 100272940B1
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000007689 inspection Methods 0.000 title description 53
- 238000012795 verification Methods 0.000 claims abstract description 96
- 238000013461 design Methods 0.000 claims abstract description 82
- 238000010894 electron beam technology Methods 0.000 claims abstract description 79
- 238000004364 calculation method Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000004513 sizing Methods 0.000 description 53
- 238000003860 storage Methods 0.000 description 44
- 238000012545 processing Methods 0.000 description 42
- 238000010586 diagram Methods 0.000 description 39
- 238000012937 correction Methods 0.000 description 14
- 238000012790 confirmation Methods 0.000 description 12
- 239000008186 active pharmaceutical agent Substances 0.000 description 11
- 238000013500 data storage Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000010365 information processing Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (4)
- 패턴데이타를 화소영역으로 분할하고, 이 분할된 패턴데이타의 상기 화소영역에 대한 점유율을 계산하기 위한 점유율 계산수단,상기 분할된 패턴데이타의 점유율에 따라서 그레이레벨 비트맵을 작성하기 위한 그레이레벨 비트맵 작성수단 및상기 점유율 계산수단과 상기 그레이레벨 비트맵 작성수단에 의해서 작성된 설계패턴데이타의 그레이레벨 비트맵과 전자빔 묘화 장치용 패턴데이타의 그레이레벨 비트맵을 비교하여, 상기 설계패턴데이타와 상기 전자빔 묘화 장치용 패턴데이타가 일치하는지의 여부를 판정하기 위한 비트맵 비교수단을 포함하는 패턴 비교 검증 장치.
- 제 1항에 있어서,상기 비트맵 비교수단은 상기 설계패턴데이타의 그레이레벨 비트맵의 화소값과 상기 전자빔 묘화 장치용 패턴데이타의 그레이레벨 비트맵의 화소값의 차의 절대값을 산출하고, 상기 화소값의 차의 절대값이 미리 정해진 유의차 값보다 큰 경우에는 불일치라고 판정하고, 상기 화소값의 차의 절대값이 상기 유의차 값 이하이고 또한 미리 정해진 허용차 값보다 큰 경우에는 워닝이라 판정하고, 상기 화소값의 차의 절대값이 상기 허용차 값 이하인 경우에는 일치라고 판정하는 패턴 비교 검증 장치.
- 설계패턴데이타를 화소영역으로 분할하고, 상기 분할된 설계패턴데이타의 상기 화소영역에 대한 점유율을 계산하는 스텝,상기 분할된 설계패턴데이타의 점유율에 따라서 그레이레벨 비트맵을 작성하는 스텝,전자빔 묘화 장치용 패턴데이타를 상기 화소영역으로 분할하고, 상기 분할된 전자빔 묘화 장치용 패턴데이타의 상기 화소영역에 대한 점유율을 계산하는 스텝,상기 분할된 전자빔 묘화 장치용 패턴데이타의 점유율에 따라서 그레이레벨 비트맵을 작성하는 스텝 및상기 설계패턴데이타의 그레이레벨 비트맵과 상기 전자빔 묘화 장치용 패턴데이타의 그레이레벨 비트맵을 비교하여, 상기 설계패턴데이타와 상기 전자빔 묘화 장치용 패턴데이타가 일치하는지의 여부를 판정하는 스텝을 포함하는 패턴 비교 검증 방법.
- 설계패턴데이타를 화소영역으로 분할하고, 상기 분할된 설계패턴데이타의 상기 화소영역에 대한 점유율을 계산하는 스텝,상기 분할된 설계패턴데이타의 점유율에 따라서 그레이레벨 비트맵을 작성하는 스텝,전자빔 묘화 장치용 패턴데이타를 상기 화소영역으로 분할하고, 상기 분할된 전자빔 묘화 장치용 패턴데이타의 상기 화소영역에 대한 점유율을 계산하는 스텝,상기 분할된 전자빔 묘화 장치용 패턴데이타의 점유율에 따라서 그레이레벨 비트맵을 작성하는 스텝 및상기 설계패턴데이타의 그레이레벨 비트맵과 상기 전자빔 묘화 장치용 패턴데이타의 그레이레벨 비트맵을 비교하여, 상기 설계패턴데이타와 상기 전자빔 묘화 장치용 패턴데이타가 일치하는지의 여부를 판정하는 스텝을 포함하는 패턴 비교 검증 프로그램을 기록한 매체.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-338450 | 1996-12-18 | ||
JP8338450A JPH10177589A (ja) | 1996-12-18 | 1996-12-18 | パターン比較検証装置、パターン比較検証方法およびパターン比較検証プログラムを記録した媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980063308A KR19980063308A (ko) | 1998-10-07 |
KR100272940B1 true KR100272940B1 (ko) | 2000-11-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019970019686A KR100272940B1 (ko) | 1996-12-18 | 1997-05-21 | 패턴비교검증장치,패턴비교검증방법및패턴비교검증프로그램을기록한매체 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6069971A (ko) |
JP (1) | JPH10177589A (ko) |
KR (1) | KR100272940B1 (ko) |
DE (1) | DE19729600B4 (ko) |
TW (1) | TW331648B (ko) |
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-
1996
- 1996-12-18 JP JP8338450A patent/JPH10177589A/ja not_active Withdrawn
-
1997
- 1997-03-25 TW TW086103788A patent/TW331648B/zh not_active IP Right Cessation
- 1997-05-21 KR KR1019970019686A patent/KR100272940B1/ko not_active IP Right Cessation
- 1997-06-02 US US08/866,244 patent/US6069971A/en not_active Expired - Fee Related
- 1997-07-10 DE DE19729600A patent/DE19729600B4/de not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
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US5048094A (en) * | 1988-11-29 | 1991-09-10 | Nippon Seiko Kabushiki Kaisha | Method and apparatus for checking pattern |
Also Published As
Publication number | Publication date |
---|---|
US6069971A (en) | 2000-05-30 |
KR19980063308A (ko) | 1998-10-07 |
DE19729600B4 (de) | 2004-12-09 |
JPH10177589A (ja) | 1998-06-30 |
TW331648B (en) | 1998-05-11 |
DE19729600A1 (de) | 1998-06-25 |
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