KR100269059B1 - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

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Publication number
KR100269059B1
KR100269059B1 KR1019960019897A KR19960019897A KR100269059B1 KR 100269059 B1 KR100269059 B1 KR 100269059B1 KR 1019960019897 A KR1019960019897 A KR 1019960019897A KR 19960019897 A KR19960019897 A KR 19960019897A KR 100269059 B1 KR100269059 B1 KR 100269059B1
Authority
KR
South Korea
Prior art keywords
potential difference
potential
bit lines
pair
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960019897A
Other languages
English (en)
Korean (ko)
Other versions
KR970003244A (ko
Inventor
이사오 다나카
츠구야스 하츠다
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시키가이샤 filed Critical 모리시타 요이찌
Publication of KR970003244A publication Critical patent/KR970003244A/ko
Application granted granted Critical
Publication of KR100269059B1 publication Critical patent/KR100269059B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019960019897A 1995-06-08 1996-06-05 반도체 메모리 장치 Expired - Fee Related KR100269059B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14153595 1995-06-08
JP95-141535 1995-06-08

Publications (2)

Publication Number Publication Date
KR970003244A KR970003244A (ko) 1997-01-28
KR100269059B1 true KR100269059B1 (ko) 2000-12-01

Family

ID=15294234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019897A Expired - Fee Related KR100269059B1 (ko) 1995-06-08 1996-06-05 반도체 메모리 장치

Country Status (3)

Country Link
US (2) US5672987A (enExample)
KR (1) KR100269059B1 (enExample)
TW (1) TW301747B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3569417B2 (ja) * 1996-07-19 2004-09-22 株式会社ルネサステクノロジ 半導体メモリ
KR100259358B1 (ko) * 1998-02-09 2000-06-15 김영환 균등화 펄스폭 제어회로
KR100391147B1 (ko) * 2000-10-24 2003-07-16 삼성전자주식회사 멀티 파이프라인 구조를 가지는 고속 동기 반도체 메모리및 그의 동작방법
KR100403612B1 (ko) * 2000-11-08 2003-11-01 삼성전자주식회사 비트라인 프리차아지 시간(ｔＲＰ)을 개선하는 메모리 셀어레이 구조를 갖는 반도체 메모리 장치 및 그 개선 방법
JP3871060B2 (ja) * 2003-03-25 2007-01-24 株式会社リコー 光記録媒体及び情報記録方法
US7295481B2 (en) * 2003-10-16 2007-11-13 International Business Machines Corporation Power saving by disabling cyclic bitline precharge
KR100585179B1 (ko) * 2005-02-07 2006-06-02 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 데이터 기입및 독출 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410493A (en) * 1987-07-02 1989-01-13 Mitsubishi Electric Corp Charge transfer type sense amplifier
JPH02308489A (ja) * 1989-05-23 1990-12-21 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH05182458A (ja) * 1991-12-26 1993-07-23 Toshiba Corp 半導体記憶装置
US5365129A (en) * 1993-04-29 1994-11-15 Sgs-Thomson Microelectronics, Inc. Temperature-compensated voltage level sense circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4685088A (en) * 1985-04-15 1987-08-04 International Business Machines Corporation High performance memory system utilizing pipelining techniques
JPS6435794A (en) * 1987-07-30 1989-02-06 Nec Corp Semiconductor memory
JP2680939B2 (ja) * 1991-03-27 1997-11-19 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
SE501604C2 (sv) * 1993-08-13 1995-03-27 Ericsson Telefon Ab L M Metod och anordning för sampling av elektriska signaler
JP2937027B2 (ja) * 1994-09-07 1999-08-23 日本電気株式会社 コンパレータ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410493A (en) * 1987-07-02 1989-01-13 Mitsubishi Electric Corp Charge transfer type sense amplifier
JPH02308489A (ja) * 1989-05-23 1990-12-21 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH05182458A (ja) * 1991-12-26 1993-07-23 Toshiba Corp 半導体記憶装置
US5365129A (en) * 1993-04-29 1994-11-15 Sgs-Thomson Microelectronics, Inc. Temperature-compensated voltage level sense circuit

Also Published As

Publication number Publication date
KR970003244A (ko) 1997-01-28
TW301747B (enExample) 1997-04-01
US5672987A (en) 1997-09-30
US5892723A (en) 1999-04-06

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