KR100251134B1 - 반도체의 성막방법 및 그 장치 - Google Patents

반도체의 성막방법 및 그 장치 Download PDF

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Publication number
KR100251134B1
KR100251134B1 KR1019950047289A KR19950047289A KR100251134B1 KR 100251134 B1 KR100251134 B1 KR 100251134B1 KR 1019950047289 A KR1019950047289 A KR 1019950047289A KR 19950047289 A KR19950047289 A KR 19950047289A KR 100251134 B1 KR100251134 B1 KR 100251134B1
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KR
South Korea
Prior art keywords
flow rate
gas
reaction
atmospheric pressure
inert gas
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Expired - Lifetime
Application number
KR1019950047289A
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English (en)
Korean (ko)
Other versions
KR960026378A (ko
Inventor
하라다토루
Original Assignee
엔도 마코토
고쿠사이 일렉트릭 콤파니 리미티드
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Publication of KR960026378A publication Critical patent/KR960026378A/ko
Application granted granted Critical
Publication of KR100251134B1 publication Critical patent/KR100251134B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019950047289A 1994-12-19 1995-12-07 반도체의 성막방법 및 그 장치 Expired - Lifetime KR100251134B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6-334400 1994-12-19
JP6334400A JPH08172084A (ja) 1994-12-19 1994-12-19 半導体成膜方法及びその装置

Publications (2)

Publication Number Publication Date
KR960026378A KR960026378A (ko) 1996-07-22
KR100251134B1 true KR100251134B1 (ko) 2000-04-15

Family

ID=18276950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950047289A Expired - Lifetime KR100251134B1 (ko) 1994-12-19 1995-12-07 반도체의 성막방법 및 그 장치

Country Status (4)

Country Link
US (2) US5798141A (https=)
JP (1) JPH08172084A (https=)
KR (1) KR100251134B1 (https=)
TW (1) TW279248B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101669277B1 (ko) 2008-12-22 2016-10-25 도쿄엘렉트론가부시키가이샤 혼합 가스 공급 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2705592B2 (ja) * 1994-10-14 1998-01-28 日本電気株式会社 半導体装置の製造方法
EP1271636A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies AG Thermal oxidation process control by controlling oxidation agent partial pressure
JP4718054B2 (ja) * 2001-07-30 2011-07-06 東京エレクトロン株式会社 縦型熱処理装置
JP4068327B2 (ja) * 2001-10-11 2008-03-26 株式会社東芝 半導体製造装置と半導体装置の製造方法
JP2004259757A (ja) * 2003-02-24 2004-09-16 Seiko Epson Corp 成膜時間の最適化方法及び成膜時間の最適化システム
KR100932348B1 (ko) * 2005-03-31 2009-12-16 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판의 제조 방법 및 기판 처리장치
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP6647260B2 (ja) * 2017-09-25 2020-02-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529443A (ja) * 1991-07-25 1993-02-05 Fujitsu Ltd ウエーハ冷却装置及び冷却方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653399A (en) * 1970-06-15 1972-04-04 Nat Instr Lab Inc Gas flow controlling system
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
JPH0532500A (ja) * 1991-07-31 1993-02-09 Hitachi Ltd 大気圧による酸化・拡散処理条件の制御方法
JP3202401B2 (ja) * 1993-03-26 2001-08-27 株式会社リコー Ｍｏｓ型半導体装置におけるゲート酸化膜の製造方法
US5653807A (en) * 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529443A (ja) * 1991-07-25 1993-02-05 Fujitsu Ltd ウエーハ冷却装置及び冷却方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101669277B1 (ko) 2008-12-22 2016-10-25 도쿄엘렉트론가부시키가이샤 혼합 가스 공급 방법

Also Published As

Publication number Publication date
US6051072A (en) 2000-04-18
KR960026378A (ko) 1996-07-22
TW279248B (https=) 1996-06-21
JPH08172084A (ja) 1996-07-02
US5798141A (en) 1998-08-25

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