TW279248B - - Google Patents
Info
- Publication number
- TW279248B TW279248B TW084112764A TW84112764A TW279248B TW 279248 B TW279248 B TW 279248B TW 084112764 A TW084112764 A TW 084112764A TW 84112764 A TW84112764 A TW 84112764A TW 279248 B TW279248 B TW 279248B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6334400A JPH08172084A (ja) | 1994-12-19 | 1994-12-19 | 半導体成膜方法及びその装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW279248B true TW279248B (zh) | 1996-06-21 |
Family
ID=18276950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084112764A TW279248B (zh) | 1994-12-19 | 1995-11-30 |
Country Status (4)
Country | Link |
---|---|
US (2) | US5798141A (zh) |
JP (1) | JPH08172084A (zh) |
KR (1) | KR100251134B1 (zh) |
TW (1) | TW279248B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2705592B2 (ja) * | 1994-10-14 | 1998-01-28 | 日本電気株式会社 | 半導体装置の製造方法 |
EP1271636A1 (en) * | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
JP4718054B2 (ja) * | 2001-07-30 | 2011-07-06 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP4068327B2 (ja) * | 2001-10-11 | 2008-03-26 | 株式会社東芝 | 半導体製造装置と半導体装置の製造方法 |
JP2004259757A (ja) * | 2003-02-24 | 2004-09-16 | Seiko Epson Corp | 成膜時間の最適化方法及び成膜時間の最適化システム |
US8268731B2 (en) | 2005-03-31 | 2012-09-18 | Hitatchi Kokusai Electric Inc. | Semiconductor device producing method, substrate producing method and substrate processing apparatus |
JP5157100B2 (ja) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2008186865A (ja) * | 2007-01-26 | 2008-08-14 | Tokyo Electron Ltd | 基板処理装置 |
JP5457021B2 (ja) * | 2008-12-22 | 2014-04-02 | 東京エレクトロン株式会社 | 混合ガスの供給方法及び混合ガスの供給装置 |
JP6647260B2 (ja) * | 2017-09-25 | 2020-02-14 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及びプログラム |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3653399A (en) * | 1970-06-15 | 1972-04-04 | Nat Instr Lab Inc | Gas flow controlling system |
US5250323A (en) * | 1989-10-30 | 1993-10-05 | Kabushiki Kaisha Toshiba | Chemical vapor growth apparatus having an exhaust device including trap |
JPH0529443A (ja) * | 1991-07-25 | 1993-02-05 | Fujitsu Ltd | ウエーハ冷却装置及び冷却方法 |
JPH0532500A (ja) * | 1991-07-31 | 1993-02-09 | Hitachi Ltd | 大気圧による酸化・拡散処理条件の制御方法 |
JP3202401B2 (ja) * | 1993-03-26 | 2001-08-27 | 株式会社リコー | Mos型半導体装置におけるゲート酸化膜の製造方法 |
US5653807A (en) * | 1996-03-28 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Air Force | Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy |
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1994
- 1994-12-19 JP JP6334400A patent/JPH08172084A/ja active Pending
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1995
- 1995-11-30 TW TW084112764A patent/TW279248B/zh not_active IP Right Cessation
- 1995-12-07 KR KR1019950047289A patent/KR100251134B1/ko not_active IP Right Cessation
- 1995-12-13 US US08/571,538 patent/US5798141A/en not_active Expired - Lifetime
-
1998
- 1998-05-18 US US09/080,654 patent/US6051072A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6051072A (en) | 2000-04-18 |
KR100251134B1 (ko) | 2000-04-15 |
US5798141A (en) | 1998-08-25 |
KR960026378A (ko) | 1996-07-22 |
JPH08172084A (ja) | 1996-07-02 |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |