KR100250566B1 - 산 감응성 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법 - Google Patents

산 감응성 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100250566B1
KR100250566B1 KR1019980004822A KR19980004822A KR100250566B1 KR 100250566 B1 KR100250566 B1 KR 100250566B1 KR 1019980004822 A KR1019980004822 A KR 1019980004822A KR 19980004822 A KR19980004822 A KR 19980004822A KR 100250566 B1 KR100250566 B1 KR 100250566B1
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South Korea
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group
acid
resist
resist composition
protecting group
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KR1019980004822A
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English (en)
Korean (ko)
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KR19990006347A (ko
Inventor
꼬지 노자끼
에이 야노
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
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Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19990006347A publication Critical patent/KR19990006347A/ko
Application granted granted Critical
Publication of KR100250566B1 publication Critical patent/KR100250566B1/ko
Assigned to 가부시키가이샤 소시오넥스트 reassignment 가부시키가이샤 소시오넥스트 권리의 전부이전등록 Assignors: 후지쯔 가부시끼가이샤
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019980004822A 1997-06-23 1998-02-17 산 감응성 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법 Expired - Lifetime KR100250566B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP165935 1997-06-23
JP16593597A JP4012600B2 (ja) 1997-06-23 1997-06-23 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR19990006347A KR19990006347A (ko) 1999-01-25
KR100250566B1 true KR100250566B1 (ko) 2000-06-01

Family

ID=15821818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980004822A Expired - Lifetime KR100250566B1 (ko) 1997-06-23 1998-02-17 산 감응성 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법

Country Status (3)

Country Link
US (1) US6887644B1 (https=)
JP (1) JP4012600B2 (https=)
KR (1) KR100250566B1 (https=)

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US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
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JP4282185B2 (ja) 1999-11-02 2009-06-17 株式会社東芝 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
KR100495340B1 (ko) * 1999-12-21 2005-06-14 스미토모 쇼지 플라스틱 가부시키가이샤 베이스의 부분적 도금 방법
JP4576737B2 (ja) 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
CN1496496A (zh) 2000-11-29 2004-05-12 纳幕尔杜邦公司 聚合物中的保护基,光刻胶及微细光刻的方法
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
JP4697827B2 (ja) * 2001-01-30 2011-06-08 三菱レイヨン株式会社 化学増幅型レジスト用樹脂の精製方法および化学増幅型レジスト用樹脂
JP4524940B2 (ja) * 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4393010B2 (ja) * 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US7088010B2 (en) * 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
WO2005121193A1 (ja) 2004-06-08 2005-12-22 Tokyo Ohka Kogyo Co., Ltd. 重合体、ポジ型レジスト組成物およびレジストパターン形成方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP2007186713A (ja) * 2007-03-29 2007-07-26 Jsr Corp 感放射線性樹脂組成物の製造方法
JP5364256B2 (ja) * 2007-06-13 2013-12-11 東京応化工業株式会社 化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
JP5089303B2 (ja) * 2007-09-13 2012-12-05 三菱レイヨン株式会社 化学増幅型レジスト用樹脂
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5764297B2 (ja) * 2010-03-31 2015-08-19 東京応化工業株式会社 レジストパターン形成方法及び樹脂の精製方法
EP2472327A1 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP5935328B2 (ja) * 2012-01-11 2016-06-15 三菱レイヨン株式会社 β位に置換基を持つラクトン構造を有する化合物または重合体の製造方法
US9694518B2 (en) * 2014-06-20 2017-07-04 The Regents Of The University Of Michigan Breath-activated images and anti-counterfeit authentication features formed of nanopillar arrays
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
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JP4012600B2 (ja) 2007-11-21
KR19990006347A (ko) 1999-01-25
US6887644B1 (en) 2005-05-03
JPH1112326A (ja) 1999-01-19

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