JP4012600B2 - 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 - Google Patents

酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 Download PDF

Info

Publication number
JP4012600B2
JP4012600B2 JP16593597A JP16593597A JP4012600B2 JP 4012600 B2 JP4012600 B2 JP 4012600B2 JP 16593597 A JP16593597 A JP 16593597A JP 16593597 A JP16593597 A JP 16593597A JP 4012600 B2 JP4012600 B2 JP 4012600B2
Authority
JP
Japan
Prior art keywords
resist
resist composition
acid
group
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16593597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1112326A5 (https=
JPH1112326A (ja
Inventor
耕司 野崎
映 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15821818&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4012600(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16593597A priority Critical patent/JP4012600B2/ja
Priority to US09/015,287 priority patent/US6887644B1/en
Priority to KR1019980004822A priority patent/KR100250566B1/ko
Publication of JPH1112326A publication Critical patent/JPH1112326A/ja
Publication of JPH1112326A5 publication Critical patent/JPH1112326A5/ja
Application granted granted Critical
Publication of JP4012600B2 publication Critical patent/JP4012600B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP16593597A 1997-06-23 1997-06-23 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 Expired - Lifetime JP4012600B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16593597A JP4012600B2 (ja) 1997-06-23 1997-06-23 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法
US09/015,287 US6887644B1 (en) 1997-06-23 1998-01-29 Polymer compound for a chemical amplification resist and a fabrication process of a semiconductor device using such a chemical amplification resist
KR1019980004822A KR100250566B1 (ko) 1997-06-23 1998-02-17 산 감응성 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16593597A JP4012600B2 (ja) 1997-06-23 1997-06-23 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1112326A JPH1112326A (ja) 1999-01-19
JPH1112326A5 JPH1112326A5 (https=) 2005-04-28
JP4012600B2 true JP4012600B2 (ja) 2007-11-21

Family

ID=15821818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16593597A Expired - Lifetime JP4012600B2 (ja) 1997-06-23 1997-06-23 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US6887644B1 (https=)
JP (1) JP4012600B2 (https=)
KR (1) KR100250566B1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017680A (en) * 1997-08-05 2000-01-25 Hitachi, Ltd. Method for pattern formation and process for preparing semiconductor device
JP3740367B2 (ja) 1998-03-27 2006-02-01 三菱レイヨン株式会社 共重合体
JP2003502449A (ja) 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
WO2001030739A1 (en) * 1999-10-27 2001-05-03 Daicel Chemical Industries, Ltd. Process for the production of adamantyl (meth)acrylates
JP4282185B2 (ja) 1999-11-02 2009-06-17 株式会社東芝 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
KR100495340B1 (ko) * 1999-12-21 2005-06-14 스미토모 쇼지 플라스틱 가부시키가이샤 베이스의 부분적 도금 방법
JP4576737B2 (ja) 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
CN1496496A (zh) 2000-11-29 2004-05-12 纳幕尔杜邦公司 聚合物中的保护基,光刻胶及微细光刻的方法
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
JP4697827B2 (ja) * 2001-01-30 2011-06-08 三菱レイヨン株式会社 化学増幅型レジスト用樹脂の精製方法および化学増幅型レジスト用樹脂
JP4524940B2 (ja) * 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4393010B2 (ja) * 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US7088010B2 (en) * 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
WO2005121193A1 (ja) 2004-06-08 2005-12-22 Tokyo Ohka Kogyo Co., Ltd. 重合体、ポジ型レジスト組成物およびレジストパターン形成方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP2007186713A (ja) * 2007-03-29 2007-07-26 Jsr Corp 感放射線性樹脂組成物の製造方法
JP5364256B2 (ja) * 2007-06-13 2013-12-11 東京応化工業株式会社 化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
JP5089303B2 (ja) * 2007-09-13 2012-12-05 三菱レイヨン株式会社 化学増幅型レジスト用樹脂
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5764297B2 (ja) * 2010-03-31 2015-08-19 東京応化工業株式会社 レジストパターン形成方法及び樹脂の精製方法
EP2472327A1 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP5935328B2 (ja) * 2012-01-11 2016-06-15 三菱レイヨン株式会社 β位に置換基を持つラクトン構造を有する化合物または重合体の製造方法
US9694518B2 (en) * 2014-06-20 2017-07-04 The Regents Of The University Of Michigan Breath-activated images and anti-counterfeit authentication features formed of nanopillar arrays
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
WO2019159957A1 (ja) 2018-02-16 2019-08-22 Jnc株式会社 重合性化合物、重合性組成物、重合体及びフォトレジスト用組成物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758514A (en) * 1971-10-15 1973-09-11 Mobil Oil Corp Substituted butyrolactones derived from non conjugated polyolefins
JPH05107762A (ja) 1991-10-18 1993-04-30 Fujitsu Ltd レジスト組成物とレジストパターンの形成方法
JP3236073B2 (ja) 1992-06-16 2001-12-04 富士通株式会社 レジスト組成物及びそれを用いたパターン形成方法
JPH06324494A (ja) 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法
JP3353258B2 (ja) 1993-10-26 2002-12-03 富士通株式会社 遠紫外線用レジスト
JPH07196743A (ja) 1993-12-28 1995-08-01 Fujitsu Ltd 放射線感光材料及びパターン形成方法
JP3568599B2 (ja) 1993-12-28 2004-09-22 富士通株式会社 放射線感光材料及びパターン形成方法
JPH08262717A (ja) 1995-03-27 1996-10-11 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3748596B2 (ja) 1995-08-02 2006-02-22 富士通株式会社 レジスト材料及びレジストパターンの形成方法

Also Published As

Publication number Publication date
KR100250566B1 (ko) 2000-06-01
KR19990006347A (ko) 1999-01-25
US6887644B1 (en) 2005-05-03
JPH1112326A (ja) 1999-01-19

Similar Documents

Publication Publication Date Title
JP4012600B2 (ja) 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法
KR100301354B1 (ko) 레지스트조성물및레지스트패턴형성방법
JP3297272B2 (ja) レジスト組成物及びレジストパターンの形成方法
JP3297324B2 (ja) レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JPH1112326A5 (https=)
JP3751065B2 (ja) レジスト材料及びレジストパターンの形成方法
TWI444390B (zh) 含鋶鹽之高分子化合物、光阻材料及圖案形成方法、與鋶鹽單體及其製造方法
US6207342B1 (en) Chemically amplified resist material and process for the formation of resist patterns
JP3859353B2 (ja) ネガ型レジスト組成物およびレジストパターンの形成方法
US20050026080A1 (en) Photoresist polymer and photoresist composition containing the same
JP2000298347A (ja) 新規なポリマー及びそれらを含有してなるフォトレジスト組成物
KR20000047909A (ko) 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
US10005868B2 (en) Resist composition and patterning process using the same
JPH10161313A (ja) レジスト材料及びレジストパターンの形成方法
JP2002088124A (ja) 縮合環の芳香族環を含む保護基を有する感光性ポリマー及びこれを含むレジスト組成物
JP5105667B2 (ja) ネガ型レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JPH1184663A (ja) 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法
KR100403325B1 (ko) 포토레지스트중합체및이를이용한포토레지스트조성물
JP4144957B2 (ja) レジスト組成物及びレジストパターンの形成方法
JP4527827B2 (ja) フォトレジスト架橋剤、フォトレジスト組成物、フォトレジストパターン形成方法、および半導体素子
KR100944727B1 (ko) 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트
JP3418971B2 (ja) 環式オレフィン重合体および添加剤を含むフォトレジスト組成物
JP4127937B2 (ja) レジスト組成物及びレジストパターンの形成方法
JP3781939B2 (ja) ネガ型レジスト組成物及びレジストパターンの形成方法
JP3919806B2 (ja) レジスト材料及びレジストパターンの形成方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040623

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060801

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070904

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070910

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130914

Year of fee payment: 6

EXPY Cancellation because of completion of term