KR100239026B1 - 드라이에칭방법 - Google Patents

드라이에칭방법 Download PDF

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Publication number
KR100239026B1
KR100239026B1 KR1019930023938A KR930023938A KR100239026B1 KR 100239026 B1 KR100239026 B1 KR 100239026B1 KR 1019930023938 A KR1019930023938 A KR 1019930023938A KR 930023938 A KR930023938 A KR 930023938A KR 100239026 B1 KR100239026 B1 KR 100239026B1
Authority
KR
South Korea
Prior art keywords
etching
gas
film
dry etching
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930023938A
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English (en)
Korean (ko)
Inventor
마사루 호리
하루오 오까노
미찌시게 아오야마
마사오 이또
게이 하도리
후미히꼬 히구찌
요시후미 다하라
Original Assignee
히가시 데쓰로
동경엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히가시 데쓰로, 동경엘렉트론주식회사 filed Critical 히가시 데쓰로
Application granted granted Critical
Publication of KR100239026B1 publication Critical patent/KR100239026B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019930023938A 1992-11-11 1993-11-11 드라이에칭방법 Expired - Fee Related KR100239026B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4301396A JPH06151382A (ja) 1992-11-11 1992-11-11 ドライエッチング方法
JP92-301396 1992-11-11

Publications (1)

Publication Number Publication Date
KR100239026B1 true KR100239026B1 (ko) 2000-01-15

Family

ID=17896364

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023938A Expired - Fee Related KR100239026B1 (ko) 1992-11-11 1993-11-11 드라이에칭방법

Country Status (4)

Country Link
US (1) US5411631A (enExample)
JP (1) JPH06151382A (enExample)
KR (1) KR100239026B1 (enExample)
TW (1) TW248608B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100422021B1 (ko) * 2001-06-16 2004-03-12 (주)울텍 전이금속박막 건식 식각 공정

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US5702564A (en) * 1995-01-03 1997-12-30 Advanced Micro Devices, Inc. Method of etching conductive lines without undercutting
US5667630A (en) * 1995-04-28 1997-09-16 Vanguard International Semiconductor Corporation Low charge-up reactive ion metal etch process
US5952244A (en) * 1996-02-15 1999-09-14 Lam Research Corporation Methods for reducing etch rate loading while etching through a titanium nitride anti-reflective layer and an aluminum-based metallization layer
US6004884A (en) * 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US5700740A (en) * 1996-03-25 1997-12-23 Taiwan Semiconductor Manufacturing Company Ltd Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species
JP3112832B2 (ja) * 1996-05-30 2000-11-27 日本電気株式会社 半導体装置の製造方法
US5772906A (en) * 1996-05-30 1998-06-30 Lam Research Corporation Mechanism for uniform etching by minimizing effects of etch rate loading
US5846443A (en) * 1996-07-09 1998-12-08 Lam Research Corporation Methods and apparatus for etching semiconductor wafers and layers thereof
US5770523A (en) * 1996-09-09 1998-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removal of photoresist residue after dry metal etch
US5883007A (en) * 1996-12-20 1999-03-16 Lam Research Corporation Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading
US5980768A (en) * 1997-03-07 1999-11-09 Lam Research Corp. Methods and apparatus for removing photoresist mask defects in a plasma reactor
US5846884A (en) * 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US6087266A (en) * 1997-06-27 2000-07-11 Lam Research Corporation Methods and apparatus for improving microloading while etching a substrate
KR100236716B1 (ko) * 1997-07-25 2000-01-15 윤종용 반도체장치의 제조방법
JP2003526191A (ja) * 1997-08-13 2003-09-02 アプライド マテリアルズ インコーポレイテッド 半導体デバイス用銅エッチング方法
US6008140A (en) 1997-08-13 1999-12-28 Applied Materials, Inc. Copper etch using HCI and HBr chemistry
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
TW505984B (en) 1997-12-12 2002-10-11 Applied Materials Inc Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
JP2985858B2 (ja) * 1997-12-19 1999-12-06 日本電気株式会社 エッチング方法
JP4013308B2 (ja) * 1998-01-21 2007-11-28 ヤマハ株式会社 配線形成方法
JP3293564B2 (ja) * 1998-08-20 2002-06-17 株式会社村田製作所 電子デバイスの作製方法
US6869885B1 (en) * 1999-12-17 2005-03-22 Koninklijke Philips Electronics N.V. Method for a tungsten silicide etch
US6491835B1 (en) * 1999-12-20 2002-12-10 Applied Materials, Inc. Metal mask etching of silicon
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP2003309107A (ja) * 2002-04-12 2003-10-31 Tokyo Electron Ltd 積層膜のエッチング方法
US6943350B2 (en) * 2002-08-27 2005-09-13 Kla-Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
JP2004219261A (ja) * 2003-01-15 2004-08-05 Fuji Photo Film Co Ltd 薄膜の解析方法
US20050106888A1 (en) * 2003-11-14 2005-05-19 Taiwan Semiconductor Manufacturing Co. Method of in-situ damage removal - post O2 dry process
US7208420B1 (en) 2004-07-22 2007-04-24 Lam Research Corporation Method for selectively etching an aluminum containing layer
US7459100B2 (en) * 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
KR100843236B1 (ko) * 2007-02-06 2008-07-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
FR2925763A1 (fr) * 2007-12-24 2009-06-26 Commissariat Energie Atomique Procede de fabrication de billes metalliques par plasma a partir d'une couche comportant plusieurs elements
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10697155B2 (en) * 2010-07-29 2020-06-30 Jerry L. McKinney Wastewater re-use systems
CN102376627B (zh) * 2010-08-10 2013-11-06 中芯国际集成电路制造(上海)有限公司 接触孔的形成方法
JP5659059B2 (ja) * 2011-03-24 2015-01-28 株式会社アルバック シリコン基板のエッチング方法
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
CN115706011A (zh) * 2021-08-11 2023-02-17 江苏鲁汶仪器股份有限公司 一种IC生产中AlSiCu连接层的干法刻蚀方法

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US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
JPS5913592B2 (ja) * 1979-06-22 1984-03-30 三菱電機株式会社 エツチング方法
JPS5666040A (en) * 1979-11-05 1981-06-04 Mitsubishi Electric Corp Etching method of titanium film
JPS56137637A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Etching of aluminum film
JPS5720450A (en) * 1980-07-11 1982-02-02 Toshiba Corp Forming method for pattern of semiconductor device
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues
JPH0770513B2 (ja) * 1985-05-13 1995-07-31 株式会社日立製作所 エッチングの方法およびエッチング装置
US4678540A (en) * 1986-06-09 1987-07-07 Tegal Corporation Plasma etch process
JPH01152646A (ja) * 1987-12-09 1989-06-15 Seiko Epson Corp 半導体装置の製造方法
JPH03104886A (ja) * 1989-09-19 1991-05-01 Oki Electric Ind Co Ltd アルミニウム合金のドライエッチング方法
NL8902744A (nl) * 1989-11-07 1991-06-03 Koninkl Philips Electronics Nv Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat.
JPH04103130A (ja) * 1990-08-22 1992-04-06 Fujitsu Ltd 半導体装置の製造方法
JP3210359B2 (ja) * 1991-05-29 2001-09-17 株式会社東芝 ドライエッチング方法

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Publication number Priority date Publication date Assignee Title
KR100422021B1 (ko) * 2001-06-16 2004-03-12 (주)울텍 전이금속박막 건식 식각 공정

Also Published As

Publication number Publication date
JPH06151382A (ja) 1994-05-31
TW248608B (enExample) 1995-06-01
US5411631A (en) 1995-05-02

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