KR100232691B1 - 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 - Google Patents

반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 Download PDF

Info

Publication number
KR100232691B1
KR100232691B1 KR1019950037888A KR19950037888A KR100232691B1 KR 100232691 B1 KR100232691 B1 KR 100232691B1 KR 1019950037888 A KR1019950037888 A KR 1019950037888A KR 19950037888 A KR19950037888 A KR 19950037888A KR 100232691 B1 KR100232691 B1 KR 100232691B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
capacitor
input
circuit
signal
Prior art date
Application number
KR1019950037888A
Other languages
English (en)
Korean (ko)
Other versions
KR960015165A (ko
Inventor
순수케 이노우에
마모루 미야와키
테츠노부 코키
Original Assignee
미다라이 후지오
캐논 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다라이 후지오, 캐논 가부시키가이샤 filed Critical 미다라이 후지오
Publication of KR960015165A publication Critical patent/KR960015165A/ko
Application granted granted Critical
Publication of KR100232691B1 publication Critical patent/KR100232691B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
KR1019950037888A 1994-10-28 1995-10-28 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 KR100232691B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-265039 1994-10-28
JP6265039A JPH08125152A (ja) 1994-10-28 1994-10-28 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム

Publications (2)

Publication Number Publication Date
KR960015165A KR960015165A (ko) 1996-05-22
KR100232691B1 true KR100232691B1 (ko) 1999-12-01

Family

ID=17411738

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950037888A KR100232691B1 (ko) 1994-10-28 1995-10-28 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템

Country Status (5)

Country Link
US (1) US6407442B2 (US06407442-20020618-M00001.png)
EP (1) EP0709893A3 (US06407442-20020618-M00001.png)
JP (1) JPH08125152A (US06407442-20020618-M00001.png)
KR (1) KR100232691B1 (US06407442-20020618-M00001.png)
CN (1) CN1055567C (US06407442-20020618-M00001.png)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148916A (ja) * 1995-11-24 1997-06-06 Nec Corp 半導体集積回路
JP4540146B2 (ja) 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6975355B1 (en) 2000-02-22 2005-12-13 Pixim, Inc. Multiple sampling via a time-indexed method to achieve wide dynamic ranges
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
US6407425B1 (en) * 2000-09-21 2002-06-18 Texas Instruments Incorporated Programmable neuron MOSFET on SOI
KR20010016083A (ko) * 2000-10-31 2001-03-05 채장식 세피오라이트, 탈크 및 나무타르를 함유하는 비누조성물
US6674108B2 (en) * 2000-12-20 2004-01-06 Honeywell International Inc. Gate length control for semiconductor chip design
JP4860058B2 (ja) * 2001-06-08 2012-01-25 株式会社半導体エネルギー研究所 Ｄ／ａ変換回路及び半導体装置
US6853052B2 (en) * 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
US6995412B2 (en) * 2002-04-12 2006-02-07 International Business Machines Corporation Integrated circuit with capacitors having a fin structure
GB0216069D0 (en) 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
US7358121B2 (en) 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
DE10248722A1 (de) 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
US6909151B2 (en) * 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7456476B2 (en) 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
JP4272592B2 (ja) * 2004-05-31 2009-06-03 パナソニック株式会社 半導体集積回路
US7579280B2 (en) 2004-06-01 2009-08-25 Intel Corporation Method of patterning a film
US7042009B2 (en) * 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) * 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7422946B2 (en) * 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7361958B2 (en) 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7329465B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company Optical films incorporating cyclic olefin copolymers
US7518196B2 (en) * 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7279375B2 (en) * 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US7479421B2 (en) 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7396711B2 (en) * 2005-12-27 2008-07-08 Intel Corporation Method of fabricating a multi-cornered film
US7449373B2 (en) * 2006-03-31 2008-11-11 Intel Corporation Method of ion implanting for tri-gate devices
US8143646B2 (en) * 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7880267B2 (en) * 2006-08-28 2011-02-01 Micron Technology, Inc. Buried decoupling capacitors, devices and systems including same, and methods of fabrication
US7960810B2 (en) * 2006-09-05 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
EP2161755A1 (en) 2008-09-05 2010-03-10 University College Cork-National University of Ireland, Cork Junctionless Metal-Oxide-Semiconductor Transistor
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
US9293584B2 (en) * 2011-11-02 2016-03-22 Broadcom Corporation FinFET devices
JP5623618B2 (ja) * 2013-12-02 2014-11-12 スパンションエルエルシー Ａ／ｄ変換器
US9246505B2 (en) * 2014-01-14 2016-01-26 William Marsh Rice University Systems and methods for active cancellation for improving isolation of transmission gates in high-frequency analog to digital converters
KR20150088598A (ko) * 2014-01-24 2015-08-03 삼성디스플레이 주식회사 데이터 구동부, 이를 구비하는 표시 장치 및 이를 이용하는 표시 패널의 구동 방법
US10109639B1 (en) * 2017-06-09 2018-10-23 International Business Machines Corporation Lateral non-volatile storage cell
CA3034407C (en) 2018-02-20 2021-05-04 Bradford Brainard Sensor to encoder signal converter
US11374574B2 (en) 2019-12-27 2022-06-28 Kepler Computing Inc. Linear input and non-linear output threshold logic gate
US11018672B1 (en) 2019-12-27 2021-05-25 Kepler Computing Inc. Linear input and non-linear output majority logic gate
US10944404B1 (en) * 2019-12-27 2021-03-09 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder
US11283453B2 (en) * 2019-12-27 2022-03-22 Kepler Computing Inc. Low power ferroelectric based majority logic gate carry propagate and serial adder
CN112349733B (zh) * 2020-09-09 2022-09-06 湖北长江新型显示产业创新中心有限公司 阵列基板、阵列基板的制造方法及显示装置
US11165430B1 (en) * 2020-12-21 2021-11-02 Kepler Computing Inc. Majority logic gate based sequential circuit
US11381244B1 (en) * 2020-12-21 2022-07-05 Kepler Computing Inc. Low power ferroelectric based majority logic gate multiplier
US11290112B1 (en) * 2021-05-21 2022-03-29 Kepler Computing, Inc. Majority logic gate based XOR logic gate with non-linear input capacitors
US11705906B1 (en) * 2021-05-21 2023-07-18 Kepler Computing Inc. Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic
US11303280B1 (en) 2021-08-19 2022-04-12 Kepler Computing Inc. Ferroelectric or paraelectric based sequential circuit
US11888479B1 (en) 2021-10-01 2024-01-30 Kepler Computing Inc. Non-linear polar material based low power multiplier with NOR and NAND gate based reset mechanism
US11664370B1 (en) 2021-12-14 2023-05-30 Kepler Corpating inc. Multi-function paraelectric threshold gate with input based adaptive threshold
US11705905B1 (en) 2021-12-14 2023-07-18 Kepler Computing, Inc. Multi-function ferroelectric threshold gate with input based adaptive threshold
US11716083B1 (en) 2021-12-23 2023-08-01 Kepler Computing Inc. Asynchronous circuit with threshold logic
US11855627B1 (en) 2022-01-13 2023-12-26 Kepler Computing Inc. Asynchronous consensus circuit using multi-function threshold gate with input based adaptive threshold
US11757452B1 (en) * 2022-04-20 2023-09-12 Kepler Computing Inc. OR-and-invert logic based on a mix of majority or minority logic gate with non-linear input capacitors and other logic gates
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4195282A (en) 1978-02-01 1980-03-25 Gte Laboratories Incorporated Charge redistribution circuits
JPS6223152A (ja) 1985-07-24 1987-01-31 Hitachi Ltd 半導体集積回路装置
US4872010A (en) 1988-02-08 1989-10-03 Hughes Aircraft Company Analog-to-digital converter made with focused ion beam technology
US5466961A (en) 1991-04-23 1995-11-14 Canon Kabushiki Kaisha Semiconductor device and method of manufacturing the same
DE69213539T2 (de) 1991-04-26 1997-02-20 Canon Kk Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
US5589847A (en) 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
US5471087A (en) * 1991-10-02 1995-11-28 Buerger, Jr.; Walter R. Semi-monolithic memory with high-density cell configurations
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility

Also Published As

Publication number Publication date
US6407442B2 (en) 2002-06-18
KR960015165A (ko) 1996-05-22
CN1055567C (zh) 2000-08-16
JPH08125152A (ja) 1996-05-17
CN1125900A (zh) 1996-07-03
EP0709893A3 (en) 1998-08-19
US20010052619A1 (en) 2001-12-20
EP0709893A2 (en) 1996-05-01

Similar Documents

Publication Publication Date Title
KR100232691B1 (ko) 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템
US9602750B2 (en) Image sensor pixels having built-in variable gain feedback amplifier circuitry
US7241658B2 (en) Vertical gain cell
US7110030B1 (en) Solid state image pickup apparatus
US20060181919A1 (en) Embedded DRAM gain memory cell
US20060192234A1 (en) Solid-state imaging device
US20060108618A1 (en) CMOS image sensor having buried channel MOS transistors
US6781169B2 (en) Photodetector with three transistors
CA1129081A (en) Solid-state imaging device
US5646428A (en) Output circuit provided with source follower circuit having depletion type MOS transistor
US6510193B1 (en) Charge transfer device and a semiconductor circuit including the device
JP2002217396A (ja) 固体撮像装置
JPH077147A (ja) 電荷結合素子型イメージセンサ
EP0734069B1 (en) Switching transistor for solid-state imaging device
KR100314517B1 (ko) 고체 촬상 센서
KR100460773B1 (ko) 필팩터가 향상된 이미지센서 및 그 구동방법
JP3553576B2 (ja) 固体撮像装置、ｍｏｓトランジスタ及び寄生容量抑制方法
KR100348835B1 (ko) 액티브 ｘ-ｙ 어드레싱가능형 고체 촬상 센서 및 그 동작 방법
JPH01502634A (ja) イメージセンサ用出力回路
KR900001773B1 (ko) 반도체 집적회로
JPH07106553A (ja) 固体撮像素子
JP7482447B2 (ja) フォトディテクタ、フォトディテクタアレイおよび駆動方法
JP3142943B2 (ja) 固体撮像装置
JP2001203852A (ja) 密着型イメージセンサ
JPS63260167A (ja) 固体撮像装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090825

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee