KR960015165A - 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 - Google Patents

반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 Download PDF

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Publication number
KR960015165A
KR960015165A KR1019950037888A KR19950037888A KR960015165A KR 960015165 A KR960015165 A KR 960015165A KR 1019950037888 A KR1019950037888 A KR 1019950037888A KR 19950037888 A KR19950037888 A KR 19950037888A KR 960015165 A KR960015165 A KR 960015165A
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KR
South Korea
Prior art keywords
semiconductor device
processing system
signal processing
signal
computing device
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KR1019950037888A
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English (en)
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KR100232691B1 (ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
KR1019950037888A 1994-10-28 1995-10-28 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템 KR100232691B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-265039 1994-10-28
JP6265039A JPH08125152A (ja) 1994-10-28 1994-10-28 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム

Publications (2)

Publication Number Publication Date
KR960015165A true KR960015165A (ko) 1996-05-22
KR100232691B1 KR100232691B1 (ko) 1999-12-01

Family

ID=17411738

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950037888A KR100232691B1 (ko) 1994-10-28 1995-10-28 반도체 장치와 연산 장치, 신호 변환기 및 동일한 반도체 장치를 사용하는 신호 처리 시스템

Country Status (5)

Country Link
US (1) US6407442B2 (ko)
EP (1) EP0709893A3 (ko)
JP (1) JPH08125152A (ko)
KR (1) KR100232691B1 (ko)
CN (1) CN1055567C (ko)

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Also Published As

Publication number Publication date
EP0709893A3 (en) 1998-08-19
JPH08125152A (ja) 1996-05-17
CN1125900A (zh) 1996-07-03
US6407442B2 (en) 2002-06-18
CN1055567C (zh) 2000-08-16
US20010052619A1 (en) 2001-12-20
KR100232691B1 (ko) 1999-12-01
EP0709893A2 (en) 1996-05-01

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