KR100209559B1 - 마그네트론 플라즈마 처리장치 및 처리방법 - Google Patents

마그네트론 플라즈마 처리장치 및 처리방법 Download PDF

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Publication number
KR100209559B1
KR100209559B1 KR1019910017148A KR910017148A KR100209559B1 KR 100209559 B1 KR100209559 B1 KR 100209559B1 KR 1019910017148 A KR1019910017148 A KR 1019910017148A KR 910017148 A KR910017148 A KR 910017148A KR 100209559 B1 KR100209559 B1 KR 100209559B1
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KR
South Korea
Prior art keywords
magnetic field
electrode
etching
vacuum chamber
generating means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019910017148A
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English (en)
Korean (ko)
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KR920007129A (ko
Inventor
히로미 하라다
신지 구보따
히로미 구마가이
쥰이찌 아라미
게이지 호리오까
이사히로 하세가와
하루오 오까노
가쯔야 오꾸무라
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
히가시 데쓰로
동경 엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26129690A external-priority patent/JPH04139723A/ja
Priority claimed from JP2339801A external-priority patent/JP2955777B2/ja
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바, 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 니시무로 타이죠
Publication of KR920007129A publication Critical patent/KR920007129A/ko
Application granted granted Critical
Publication of KR100209559B1 publication Critical patent/KR100209559B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3494—Adaptation to extreme pressure conditions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019910017148A 1990-09-29 1991-09-28 마그네트론 플라즈마 처리장치 및 처리방법 Expired - Lifetime KR100209559B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP26129490 1990-09-29
JP90-261296 1990-09-29
JP90-261294 1990-09-29
JP26129690A JPH04139723A (ja) 1990-09-29 1990-09-29 マグネトロンプラズマ処理装置
JP90-339801 1990-11-30
JP2339801A JP2955777B2 (ja) 1990-11-30 1990-11-30 マグネトロンプラズマ装置

Publications (2)

Publication Number Publication Date
KR920007129A KR920007129A (ko) 1992-04-28
KR100209559B1 true KR100209559B1 (ko) 1999-07-15

Family

ID=27335023

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017148A Expired - Lifetime KR100209559B1 (ko) 1990-09-29 1991-09-28 마그네트론 플라즈마 처리장치 및 처리방법

Country Status (5)

Country Link
US (3) US5376211A (enExample)
EP (2) EP0479189B1 (enExample)
KR (1) KR100209559B1 (enExample)
DE (1) DE69124178T2 (enExample)
TW (1) TW218065B (enExample)

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JP2592217B2 (ja) * 1993-11-11 1997-03-19 株式会社フロンテック 高周波マグネトロンプラズマ装置
US5554249A (en) * 1994-02-28 1996-09-10 Tokyo Electron Limited Magnetron plasma processing system
KR0152242B1 (ko) * 1995-01-16 1998-12-01 박주탁 다중 음극 전자빔 플라즈마 식각장치
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US5779807A (en) 1996-10-29 1998-07-14 Applied Materials, Inc. Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers
US5830330A (en) * 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
KR100528685B1 (ko) 1998-03-12 2005-11-15 가부시끼가이샤 히다치 세이사꾸쇼 시료의 표면 가공방법
US6846391B1 (en) 1998-04-01 2005-01-25 Novellus Systems Process for depositing F-doped silica glass in high aspect ratio structures
US6492277B1 (en) 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
US6849154B2 (en) * 1998-11-27 2005-02-01 Tokyo Electron Limited Plasma etching apparatus
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
JP2002343770A (ja) * 2001-05-16 2002-11-29 Seiko Epson Corp エッチング方法、エッチング装置及び半導体装置の製造方法
KR100469552B1 (ko) * 2002-01-08 2005-02-02 아이티엠 주식회사 플라즈마 표면 처리 장치 및 방법
JP4278915B2 (ja) * 2002-04-02 2009-06-17 東京エレクトロン株式会社 エッチング方法
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
EP1700335A1 (en) * 2003-12-22 2006-09-13 Adaptive Plasma Technology Corporation Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
US7359177B2 (en) 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
JP5207892B2 (ja) * 2008-09-11 2013-06-12 東京エレクトロン株式会社 ドライエッチング方法
CN103177917B (zh) * 2011-12-21 2015-10-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管以及应用该磁控管的磁控溅射设备
CN106220682B (zh) * 2016-07-20 2017-06-16 中国科学技术大学 一种含磷含氮阻燃多元醇及其制备方法

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Also Published As

Publication number Publication date
DE69124178T2 (de) 1997-06-05
EP0663683A3 (en) 1995-10-25
EP0663683A2 (en) 1995-07-19
US5376211A (en) 1994-12-27
TW218065B (enExample) 1993-12-21
DE69124178D1 (de) 1997-02-27
US5660671A (en) 1997-08-26
KR920007129A (ko) 1992-04-28
US5888338A (en) 1999-03-30
EP0479189A1 (en) 1992-04-08
EP0479189B1 (en) 1997-01-15

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