DE69124178T2 - Gerät zur Magnetronplasmabearbeitung - Google Patents
Gerät zur MagnetronplasmabearbeitungInfo
- Publication number
- DE69124178T2 DE69124178T2 DE69124178T DE69124178T DE69124178T2 DE 69124178 T2 DE69124178 T2 DE 69124178T2 DE 69124178 T DE69124178 T DE 69124178T DE 69124178 T DE69124178 T DE 69124178T DE 69124178 T2 DE69124178 T2 DE 69124178T2
- Authority
- DE
- Germany
- Prior art keywords
- magnetic field
- etching
- electrode
- plasma processing
- magnetron plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 33
- 238000005530 etching Methods 0.000 claims description 155
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 76
- 230000008569 process Effects 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 56
- 239000004065 semiconductor Substances 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 239000000758 substrate Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 20
- 230000004907 flux Effects 0.000 description 19
- 238000001020 plasma etching Methods 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 11
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 11
- 230000006378 damage Effects 0.000 description 11
- 239000001307 helium Substances 0.000 description 11
- 229910052734 helium Inorganic materials 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 8
- 229910052794 bromium Inorganic materials 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3494—Adaptation to extreme pressure conditions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3344—Problems associated with etching isotropy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26129490 | 1990-09-29 | ||
| JP26129690A JPH04139723A (ja) | 1990-09-29 | 1990-09-29 | マグネトロンプラズマ処理装置 |
| JP2339801A JP2955777B2 (ja) | 1990-11-30 | 1990-11-30 | マグネトロンプラズマ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69124178D1 DE69124178D1 (de) | 1997-02-27 |
| DE69124178T2 true DE69124178T2 (de) | 1997-06-05 |
Family
ID=27335023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69124178T Expired - Fee Related DE69124178T2 (de) | 1990-09-29 | 1991-09-30 | Gerät zur Magnetronplasmabearbeitung |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US5376211A (enExample) |
| EP (2) | EP0479189B1 (enExample) |
| KR (1) | KR100209559B1 (enExample) |
| DE (1) | DE69124178T2 (enExample) |
| TW (1) | TW218065B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0566143B1 (en) * | 1992-04-17 | 1999-11-24 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for generating plasma |
| JP2592217B2 (ja) * | 1993-11-11 | 1997-03-19 | 株式会社フロンテック | 高周波マグネトロンプラズマ装置 |
| US5554249A (en) * | 1994-02-28 | 1996-09-10 | Tokyo Electron Limited | Magnetron plasma processing system |
| KR0152242B1 (ko) * | 1995-01-16 | 1998-12-01 | 박주탁 | 다중 음극 전자빔 플라즈마 식각장치 |
| JPH08274073A (ja) * | 1995-03-31 | 1996-10-18 | Sony Corp | アルミニウム系金属膜のエッチング方法 |
| JPH09167755A (ja) * | 1995-12-15 | 1997-06-24 | Nec Corp | プラズマ酸化膜処理装置 |
| US5779807A (en) | 1996-10-29 | 1998-07-14 | Applied Materials, Inc. | Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers |
| US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
| KR100528685B1 (ko) | 1998-03-12 | 2005-11-15 | 가부시끼가이샤 히다치 세이사꾸쇼 | 시료의 표면 가공방법 |
| US6846391B1 (en) | 1998-04-01 | 2005-01-25 | Novellus Systems | Process for depositing F-doped silica glass in high aspect ratio structures |
| US6492277B1 (en) | 1999-09-10 | 2002-12-10 | Hitachi, Ltd. | Specimen surface processing method and apparatus |
| US6849154B2 (en) * | 1998-11-27 | 2005-02-01 | Tokyo Electron Limited | Plasma etching apparatus |
| US7196283B2 (en) | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
| US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
| US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US8617351B2 (en) | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
| US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
| US8048806B2 (en) | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| US6853141B2 (en) | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
| US6528751B1 (en) | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
| JP2002343770A (ja) * | 2001-05-16 | 2002-11-29 | Seiko Epson Corp | エッチング方法、エッチング装置及び半導体装置の製造方法 |
| KR100469552B1 (ko) * | 2002-01-08 | 2005-02-02 | 아이티엠 주식회사 | 플라즈마 표면 처리 장치 및 방법 |
| JP4278915B2 (ja) * | 2002-04-02 | 2009-06-17 | 東京エレクトロン株式会社 | エッチング方法 |
| TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| US7910013B2 (en) | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7795153B2 (en) * | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
| US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| US7452824B2 (en) * | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
| US7470626B2 (en) * | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7901952B2 (en) * | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
| EP1700335A1 (en) * | 2003-12-22 | 2006-09-13 | Adaptive Plasma Technology Corporation | Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source |
| US7845309B2 (en) * | 2004-07-13 | 2010-12-07 | Nordson Corporation | Ultra high speed uniform plasma processing system |
| US7359177B2 (en) | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
| JP5207892B2 (ja) * | 2008-09-11 | 2013-06-12 | 東京エレクトロン株式会社 | ドライエッチング方法 |
| CN103177917B (zh) * | 2011-12-21 | 2015-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种磁控管以及应用该磁控管的磁控溅射设备 |
| CN106220682B (zh) * | 2016-07-20 | 2017-06-16 | 中国科学技术大学 | 一种含磷含氮阻燃多元醇及其制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2014490A1 (enExample) * | 1968-07-03 | 1970-04-17 | Ibm | |
| JPS56116880A (en) * | 1980-02-20 | 1981-09-12 | Toshiba Corp | Plasma etching method |
| US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
| US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
| DE3420347A1 (de) * | 1983-06-01 | 1984-12-06 | Hitachi, Ltd., Tokio/Tokyo | Gas und verfahren zum selektiven aetzen von siliciumnitrid |
| JPS61120422A (ja) * | 1984-11-16 | 1986-06-07 | Hitachi Ltd | プラズマ処理方法 |
| JPS61121440A (ja) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
| JPS61133631A (ja) * | 1984-12-03 | 1986-06-20 | Matsushita Electric Ind Co Ltd | 半導体基板のドライエツチング処理方法 |
| JPS61217573A (ja) * | 1985-03-25 | 1986-09-27 | Anelva Corp | 真空処理用放電装置 |
| JPS6276628A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | ドライエツチング装置 |
| US4657619A (en) * | 1985-11-29 | 1987-04-14 | Donnell Kevin P O | Diverter magnet arrangement for plasma processing system |
| JPS62210622A (ja) * | 1986-03-12 | 1987-09-16 | Hitachi Ltd | プラズマ処理方法及び装置 |
| US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
| JPS6348826A (ja) * | 1986-08-19 | 1988-03-01 | Toshiba Corp | ドライエツチング装置 |
| JPS63153289A (ja) * | 1986-12-15 | 1988-06-25 | Nec Corp | ドライエツチング装置 |
| JPS6411966A (en) * | 1987-07-02 | 1989-01-17 | Fujitsu Ltd | High-temperature sputtering method |
| JP2550368B2 (ja) * | 1987-11-25 | 1996-11-06 | 株式会社日立製作所 | 有磁場プラズマエッチング装置 |
| JPH02122523A (ja) * | 1988-11-01 | 1990-05-10 | Matsushita Electric Ind Co Ltd | ドライエッチング方法およびその装置 |
| JP2639019B2 (ja) * | 1988-11-25 | 1997-08-06 | 東レ株式会社 | エンドトキシンの定量方法 |
| JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JP3033104B2 (ja) * | 1989-11-17 | 2000-04-17 | ソニー株式会社 | エッチング方法 |
| US5026470A (en) * | 1989-12-19 | 1991-06-25 | International Business Machines | Sputtering apparatus |
| US5223113A (en) * | 1990-07-20 | 1993-06-29 | Tokyo Electron Limited | Apparatus for forming reduced pressure and for processing object |
| US5079481A (en) * | 1990-08-02 | 1992-01-07 | Texas Instruments Incorporated | Plasma-assisted processing magneton with magnetic field adjustment |
-
1991
- 1991-09-27 US US07/766,324 patent/US5376211A/en not_active Expired - Lifetime
- 1991-09-28 KR KR1019910017148A patent/KR100209559B1/ko not_active Expired - Lifetime
- 1991-09-30 TW TW080107709A patent/TW218065B/zh active
- 1991-09-30 EP EP91116645A patent/EP0479189B1/en not_active Expired - Lifetime
- 1991-09-30 DE DE69124178T patent/DE69124178T2/de not_active Expired - Fee Related
- 1991-09-30 EP EP95104732A patent/EP0663683A3/en not_active Withdrawn
-
1994
- 1994-06-28 US US08/266,635 patent/US5660671A/en not_active Expired - Lifetime
-
1997
- 1997-03-27 US US08/827,439 patent/US5888338A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0663683A3 (en) | 1995-10-25 |
| EP0663683A2 (en) | 1995-07-19 |
| US5376211A (en) | 1994-12-27 |
| TW218065B (enExample) | 1993-12-21 |
| DE69124178D1 (de) | 1997-02-27 |
| US5660671A (en) | 1997-08-26 |
| KR100209559B1 (ko) | 1999-07-15 |
| KR920007129A (ko) | 1992-04-28 |
| US5888338A (en) | 1999-03-30 |
| EP0479189A1 (en) | 1992-04-08 |
| EP0479189B1 (en) | 1997-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |