KR100198521B1 - 어드레스 패턴 발생기 - Google Patents
어드레스 패턴 발생기 Download PDFInfo
- Publication number
- KR100198521B1 KR100198521B1 KR1019950025631A KR19950025631A KR100198521B1 KR 100198521 B1 KR100198521 B1 KR 100198521B1 KR 1019950025631 A KR1019950025631 A KR 1019950025631A KR 19950025631 A KR19950025631 A KR 19950025631A KR 100198521 B1 KR100198521 B1 KR 100198521B1
- Authority
- KR
- South Korea
- Prior art keywords
- address
- signal
- generator
- output
- burst
- Prior art date
Links
- 238000012360 testing method Methods 0.000 claims abstract description 50
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000002789 length control Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 230000009172 bursting Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/34—Addressing or accessing the instruction operand or the result ; Formation of operand address; Addressing modes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/31813—Test pattern generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/319—Tester hardware, i.e. output processing circuits
- G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
- G01R31/31919—Storing and outputting test patterns
- G01R31/31921—Storing and outputting test patterns using compression techniques, e.g. patterns sequencer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Software Systems (AREA)
- Theoretical Computer Science (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
- Memory System (AREA)
Abstract
Description
Claims (5)
- 피측정 소자를 시험하기 위한 어드레스 패턴 발생기에 있어서, Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725), Z 어드레스 발생부(30)로부터의 Z 어드레스 신호(730) 및 명령 메모리(90)로부터 동작 모드 제어 신호(780)를 선택 출력하는 n비트로 이루어진 어드레스 선택기(40)와; 상기 n비트의 어드레스 선택기(40)의 출력을 어드레스 신호로서 일정한 변환 테이블 내용을 출력하는 변환 메모리(50)와; 상기 변환 메모리(50)의 출력인 버스트 어드레스(750) 및 상기 Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725)를 명령 메모리(90)로부터의 버스트 길이 제어 신호(770)에 따라서 각 비트마다 선택 출력하는 멀티플렉서(60)를 구비하고, 실시간으로 모드 동작을 변경할 수 있는 것을 특징으로 하는 어드레스 패턴 발생기.
- 제1항에 있어서, 상기 어드레스 선택기(40)는, 어드레스 포인터(41)와 디코더(42)에 의해 선택 데이터를 격납하는 n비트수로 이루어진 레지스터(431, 432, 433)와, 상기 각 레지스터 출력값에 따라서 Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725), Z 어드레스 발생부(30)로부터의 Z 어드레스 신호(730) 및 명령 메모리(90)로부터의 동작 모드 제어 신호(780)를 선택 출력하는 n비트로 이루어진 멀티플렉서(441, 442)로 이루어진 것을 특징으로 하는 어드레스 패턴 발생기.
- 피측정 소자를 시험하기 위한 어드레스 패턴 발생기에 있어서, 명령 메모리(90)로부터의 제어 신호(830)에 이해 순차적 모두인 경우는 Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725)를 로드하고, 인터리브 모드인 경우는 고정치(#0)를 로드하는 카운터 (91)와; 상기 카운터(91)의 출력 신호를 1입력단에 부여하고, Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725)를 다른 입력단에 부여하는 배타적 논리합 게이트(93)와; 명령 메모리(90)로부터의 제어 신호(840)에 의해 순차적 모드인 경우는 상기 카운터(91)이 출력 신호를, 인터리브 모드인 경우는 상기 배타적 논리합게이트(93)의 출력 신호를 선택하는 멀티플렉서(94)와; 명령 메모리(90)로부터의 제어 신호(770)에 의해 데이터 비트가 1인 경우는 상기 멀티플렉서(94)의 출력 신호를 선택하고, 데이터 비트가 0인 경우는 Y 어드레스 발생부(20)로부터의 하위 Y 어드레스 신호(725)를 비트마다 선택하는 멀티플렉서(95)를 구비하고, 실시간으로 모드 동작을 변경할 수 있는 것을 특징으로 하는 어드레스 패턴 발생기.
- 제1항 또는 제2항에 있어서, 상기 명령 메모리(90)로부터의 각 신호(790, 850)를 래치하는 각 레지스터(70, 92)를 추가로 포함하고, 상기 명령 메모리(90)로부터의 각 신호는 상기 레지스터(70, 92)의 출력으로부터 공급되는 신호(780, 770)인 것을 특징으로 하는 어드레스 패턴 발생기.
- 제 3항에 있어서, 상기 명령 메모리(90)로부터의 각 신호(790, 850)를 래치하는 각 레지스터(70, 92)를 추가로 포함하고, 상기 명령 메모리(90)로부터의 각 신호는 상기 레지스터(70, 92)의 출력으로 공급되는 신호(780, 770)인 것을 특징으로 하는 어드레스 패턴 발생기.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP94-220979 | 1994-08-22 | ||
JP22097994A JP3605150B2 (ja) | 1994-08-22 | 1994-08-22 | アドレスパターン発生器 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960008339A KR960008339A (ko) | 1996-03-22 |
KR100198521B1 true KR100198521B1 (ko) | 1999-06-15 |
Family
ID=16759571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950025631A KR100198521B1 (ko) | 1994-08-22 | 1995-08-21 | 어드레스 패턴 발생기 |
Country Status (3)
Country | Link |
---|---|
US (2) | US5835969A (ko) |
JP (1) | JP3605150B2 (ko) |
KR (1) | KR100198521B1 (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3605150B2 (ja) * | 1994-08-22 | 2004-12-22 | 株式会社アドバンテスト | アドレスパターン発生器 |
US5991850A (en) * | 1996-08-15 | 1999-11-23 | Micron Technology, Inc. | Synchronous DRAM modules including multiple clock out signals for increasing processing speed |
US6061815A (en) * | 1996-12-09 | 2000-05-09 | Schlumberger Technologies, Inc. | Programming utility register to generate addresses in algorithmic pattern generator |
KR100468675B1 (ko) * | 1997-07-25 | 2005-03-16 | 삼성전자주식회사 | 스태틱램자기테스트회로의어드레스발생기및어드레스발생방법 |
JPH11134243A (ja) * | 1997-10-31 | 1999-05-21 | Brother Ind Ltd | 記憶装置の制御装置及びデータ処理システムにおける記憶装置の制御方法 |
JPH11264857A (ja) | 1998-03-19 | 1999-09-28 | Advantest Corp | 半導体試験装置 |
US6078637A (en) | 1998-06-29 | 2000-06-20 | Cypress Semiconductor Corp. | Address counter test mode for memory device |
KR100280518B1 (ko) * | 1998-11-10 | 2001-03-02 | 김영환 | 동기 에스램 회로 |
US6389525B1 (en) * | 1999-01-08 | 2002-05-14 | Teradyne, Inc. | Pattern generator for a packet-based memory tester |
JP4435915B2 (ja) * | 1999-11-26 | 2010-03-24 | 株式会社アドバンテスト | パターン発生方法・パターン発生器・メモリ試験装置 |
JP2001282704A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | データ処理装置及びデータ処理方法とデータ処理システム |
US7124281B1 (en) * | 2000-09-21 | 2006-10-17 | Freescale Semiconductor, Inc. | Processing system having sequential address indicator signals |
TWI234001B (en) * | 2001-03-20 | 2005-06-11 | Schlumberger Techonogies Inc | Low-jitter clock for test system |
US6754858B2 (en) * | 2001-03-29 | 2004-06-22 | International Business Machines Corporation | SDRAM address error detection method and apparatus |
US6779074B2 (en) * | 2001-07-13 | 2004-08-17 | Micron Technology, Inc. | Memory device having different burst order addressing for read and write operations |
TW516118B (en) * | 2001-09-11 | 2003-01-01 | Leadtek Research Inc | Decoding conversion device and method capable of supporting multiple memory chips and their application system |
US7107365B1 (en) * | 2002-06-25 | 2006-09-12 | Cypress Semiconductor Corp. | Early detection and grant, an arbitration scheme for single transfers on AMBA advanced high-performance bus |
JP2005011451A (ja) * | 2003-06-19 | 2005-01-13 | Advantest Corp | 試験装置、及びプログラム |
US7430642B2 (en) * | 2005-06-10 | 2008-09-30 | Freescale Semiconductor, Inc. | System and method for unified cache access using sequential instruction information |
US20070050668A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Test mode to force generation of all possible correction codes in an ECC memory |
KR100668756B1 (ko) * | 2005-10-12 | 2007-01-29 | 주식회사 하이닉스반도체 | 반도체 장치 |
JP4408881B2 (ja) * | 2006-09-27 | 2010-02-03 | Necエレクトロニクス株式会社 | 半導体集積回路 |
JP5127350B2 (ja) * | 2007-07-31 | 2013-01-23 | 株式会社東芝 | 半導体記憶装置 |
US7848899B2 (en) * | 2008-06-09 | 2010-12-07 | Kingtiger Technology (Canada) Inc. | Systems and methods for testing integrated circuit devices |
JP5126090B2 (ja) * | 2009-01-30 | 2013-01-23 | 横河電機株式会社 | メモリテスト装置 |
KR101543332B1 (ko) * | 2009-12-31 | 2015-08-11 | 삼성전자주식회사 | 버스트 어드레스 생성기 및 이를 포함하는 테스트 장치 |
US8356215B2 (en) * | 2010-01-19 | 2013-01-15 | Kingtiger Technology (Canada) Inc. | Testing apparatus and method for analyzing a memory module operating within an application system |
US8724408B2 (en) | 2011-11-29 | 2014-05-13 | Kingtiger Technology (Canada) Inc. | Systems and methods for testing and assembling memory modules |
US9117552B2 (en) | 2012-08-28 | 2015-08-25 | Kingtiger Technology(Canada), Inc. | Systems and methods for testing memory |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2613411B2 (ja) * | 1987-12-29 | 1997-05-28 | 株式会社アドバンテスト | メモリ試験装置 |
JPH01184700A (ja) * | 1988-01-11 | 1989-07-24 | Advantest Corp | メモリ試験装置 |
JP2842923B2 (ja) * | 1990-03-19 | 1999-01-06 | 株式会社アドバンテスト | 半導体メモリ試験装置 |
US5412793A (en) * | 1991-12-03 | 1995-05-02 | Intel Corporation | Method for testing erase characteristics of a flash memory array |
WO1993015462A1 (en) * | 1992-02-03 | 1993-08-05 | Advantest Corporation | Memory tester |
US5384745A (en) * | 1992-04-27 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Synchronous semiconductor memory device |
JP3346827B2 (ja) * | 1993-05-25 | 2002-11-18 | 三菱電機株式会社 | 同期型半導体記憶装置 |
US5450364A (en) * | 1994-01-31 | 1995-09-12 | Texas Instruments Incorporated | Method and apparatus for production testing of self-refresh operations and a particular application to synchronous memory devices |
JP3605150B2 (ja) * | 1994-08-22 | 2004-12-22 | 株式会社アドバンテスト | アドレスパターン発生器 |
WO2004097840A1 (ja) * | 1995-09-06 | 2004-11-11 | Osamu Yamada | Sdram用テストパターン発生装置及び方法 |
-
1994
- 1994-08-22 JP JP22097994A patent/JP3605150B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-21 KR KR1019950025631A patent/KR100198521B1/ko not_active IP Right Cessation
- 1995-08-22 US US08/517,271 patent/US5835969A/en not_active Expired - Fee Related
-
1998
- 1998-01-30 US US09/016,710 patent/US5940875A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR960008339A (ko) | 1996-03-22 |
US5835969A (en) | 1998-11-10 |
JPH0862305A (ja) | 1996-03-08 |
JP3605150B2 (ja) | 2004-12-22 |
US5940875A (en) | 1999-08-17 |
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