KR100186509B1 - 반도체장치의 배선 형성방법 - Google Patents

반도체장치의 배선 형성방법 Download PDF

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Publication number
KR100186509B1
KR100186509B1 KR1019960016461A KR19960016461A KR100186509B1 KR 100186509 B1 KR100186509 B1 KR 100186509B1 KR 1019960016461 A KR1019960016461 A KR 1019960016461A KR 19960016461 A KR19960016461 A KR 19960016461A KR 100186509 B1 KR100186509 B1 KR 100186509B1
Authority
KR
South Korea
Prior art keywords
layer
forming
conductive material
connection hole
insulating layer
Prior art date
Application number
KR1019960016461A
Other languages
English (en)
Korean (ko)
Other versions
KR970077205A (ko
Inventor
전영권
Original Assignee
문정환
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체주식회사 filed Critical 문정환
Priority to KR1019960016461A priority Critical patent/KR100186509B1/ko
Priority to JP8353935A priority patent/JPH09306993A/ja
Priority to DE19713501A priority patent/DE19713501C2/de
Publication of KR970077205A publication Critical patent/KR970077205A/ko
Application granted granted Critical
Publication of KR100186509B1 publication Critical patent/KR100186509B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019960016461A 1996-05-16 1996-05-16 반도체장치의 배선 형성방법 KR100186509B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019960016461A KR100186509B1 (ko) 1996-05-16 1996-05-16 반도체장치의 배선 형성방법
JP8353935A JPH09306993A (ja) 1996-05-16 1996-12-19 半導体装置の配線形成方法
DE19713501A DE19713501C2 (de) 1996-05-16 1997-04-01 Verfahren zum Verbinden leitender Schichten in einem Halbleiterbauteil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016461A KR100186509B1 (ko) 1996-05-16 1996-05-16 반도체장치의 배선 형성방법

Publications (2)

Publication Number Publication Date
KR970077205A KR970077205A (ko) 1997-12-12
KR100186509B1 true KR100186509B1 (ko) 1999-04-15

Family

ID=19458916

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016461A KR100186509B1 (ko) 1996-05-16 1996-05-16 반도체장치의 배선 형성방법

Country Status (3)

Country Link
JP (1) JPH09306993A (ja)
KR (1) KR100186509B1 (ja)
DE (1) DE19713501C2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980077525A (ko) * 1997-04-21 1998-11-16 문정환 배선 형성 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100269878B1 (ko) 1997-08-22 2000-12-01 윤종용 반도체소자의금속배선형성방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218950A (ja) * 1988-07-07 1990-01-23 Toshiba Corp 半導体装置及びその製造方法
JPH04298030A (ja) * 1991-03-27 1992-10-21 Sony Corp メタルプラグの形成方法
US5354712A (en) * 1992-11-12 1994-10-11 Northern Telecom Limited Method for forming interconnect structures for integrated circuits
JPH07235596A (ja) * 1994-02-22 1995-09-05 Sony Corp 半導体装置の配線構造及びその形成方法
JPH0817918A (ja) * 1994-06-29 1996-01-19 Toshiba Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980077525A (ko) * 1997-04-21 1998-11-16 문정환 배선 형성 방법

Also Published As

Publication number Publication date
KR970077205A (ko) 1997-12-12
DE19713501A1 (de) 1997-11-20
JPH09306993A (ja) 1997-11-28
DE19713501C2 (de) 2002-08-08

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