KR0139403B1 - 초음파 와이어 본딩장치 및 본딩방법 - Google Patents

초음파 와이어 본딩장치 및 본딩방법

Info

Publication number
KR0139403B1
KR0139403B1 KR1019930021663A KR930021663A KR0139403B1 KR 0139403 B1 KR0139403 B1 KR 0139403B1 KR 1019930021663 A KR1019930021663 A KR 1019930021663A KR 930021663 A KR930021663 A KR 930021663A KR 0139403 B1 KR0139403 B1 KR 0139403B1
Authority
KR
South Korea
Prior art keywords
ultrasonic
horn
capillary
bonding
vibrator
Prior art date
Application number
KR1019930021663A
Other languages
English (en)
Other versions
KR940010178A (ko
Inventor
마코토 모리타
마사루 나가이케
Original Assignee
모리사타 요이찌
마쯔시다멘기산교가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리사타 요이찌, 마쯔시다멘기산교가부시기가이샤 filed Critical 모리사타 요이찌
Publication of KR940010178A publication Critical patent/KR940010178A/ko
Application granted granted Critical
Publication of KR0139403B1 publication Critical patent/KR0139403B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106—Features related to sonotrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L21/607—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of mechanical vibrations, e.g. ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/78347—Piezoelectric transducers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/788—Means for moving parts
    • H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/78822—Rotational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Abstract

본 발명은, 리드와이어를 리드프레임에 본딩하는 장치에 있어서 베어칩이 손상하기 때문에 본딩가능범위를 확대할 수 없다고 하는 문제를 해결하는 것으로써 초음파비틀림진동자를 장착한 세로형 호온을 구비한 초음파와이어 본딩장치 및 본딩방법을 제공하는 것을 목적으로하며, 그 구성에 있어서, 초음파비틀림진동자(7)를, 초음파비틀림진동자(7)의 비틀림중심선으로부터 오프셋해서 장착된 모세관(2)을 가진 세로형호온(8)에 장착한 구성으로하므로서, 호온과 작업대가 간섭하는 일이 없게 되어, 본딩가능범위를 확대하고, 호온을 세로형으로 하므로서, 호온의 휨발생이 없어지게 되어, 베어칩이 손상되는 일없는 고정밀도의 본딩을 행할 수 있는 초음파와이어 본딩장치를 실현할 수 있다.

Description

초음파와이어 본딩장치 및 본딩방법
제 1도는 본 발명의 제 1의 실시예에 있어서의 초음파와이어본딩장치의 구성도
제 2도는 제 1의 실시예에 있어서의 장치의 동작설명을 위한 요부구성도
제 3도는 제 1의 실시예에 있어서의 진폭확대율변경방법 설명을 위한 요부구성도
제 4도는 종래의 초음파와이어본딩장치의 구성도
*도면의 주요부분에 대한 부호의 설명
1 : 호온 2 : 모세관
3 : 작업대 4 : 베어칩
5 : 리드프레임 6 : 리드와이어
7 : 초음파비틀림진동자 8 : 세로형호온
9 : 플레이트 10 : 본딩헤드
11 : 라이너로보트 12 : 초음파와이어본딩장치
13 : 비틀림중심축으로부터의 오프셋
본 발명은 모세관을 초음파진동시켜서 와이어본딩을 행하는 초음파와이어본딩장치 및 본딩방법에 관한 것이다.
종래의 세로진동을 사용한 초음파와이어본딩장치는 제 4도에 표시한바와 같이, 세로진동하는 호온(1)에 모세관(2)을 수직으로 고정하고, 작업대(3)에 재치한베어칩(4)과 리드프레임(5)을 리드와이어(6)에 모세관(2)을 미소압으로 압압하고, 호온(1)에 세로진동의 초음파진동을 부여하면서, 베어칩(4)과 리드프레임(5)을 리드와이어(6)에 의해 본딩한다.
그러나 상기의 종래의 구성에서는 호온(1)과 작업대(3)가 간섭하기 때문에 본딩가능한 작업대(3)의 사이즈가, 호온(1)의 길이에 따라 결정되고 있다. 이에 의해, 본딩가능범위를 넓히기 위해, 호온의 길이를 길게하면, 호온에 휨이 발생, 호온에 상하방향의 진동이 발생되고, 베어칩이 손상되기 때문에 본딩가능범위를 넓힐 수 없다고 하는 문제점을 가지고 있었다.
본 발명은 상기 종래의 문제점을 해결하는 것으로, 초음파비틀림진동자를 장착한 세로형호온을 구비한 초음파와이어본딩장치 및 본딩방법을 제공하는 것을 목적으로 한다.
초음파와이어본딩장치는, 초음파비틀림진동자의 비틀림중심선으로부터 오프셋해서 장착된 모세관을 가진 세로형호온에 장착된 구성을 하고 있다.
상기 구성에 의해서, 호온을 세로놓기구조로 하므로서, 호온과 작업대의 간섭을 없게해서 본딩가능범위를 확대할 수 있다.
이하 본 발명의 일실시예에 대해서, 도면을 참조하면서 설명한다.
제 1도, 제 2도에 있어서, (7)은 초음파비틀림진동자, (8)은 세로형 호온, (9)는 모세관(2)을 지지하는 플레이트, (10)은 본딩헤드, (11)은 본딩유닛을 이동하는 라이너로보트, (12)는 초음파와이어본딩장치, (13)은 세로형호온의 비틀림중 심축으로부터의 오프셋이다.
이상과 같이 구성된 초음파와이어본딩장치(12)에 대해서, 제 1도, 제 2도, 제 3도를 사용해서 그 동작을 설명한다. 먼저, 라이너로보트(11)가 이동함으로써, 본딩헤드(10)가, 작업대(3)위의 베어칩(4)과 리드프레임(5)에 세로형호온(8)의 비틀림중심축으로부터 오프셋(13)된 위치에 플레이트(9)에 의해 장착된 모세관(2)을 미소압으로 압압하고, 세로형호온(8)에 모세관(2)이 그 둘레면위에서의 진폭 약 5㎛의 초음파μ비틀림진동을 부여하면서, 베어칩(4)과 리드프레임(5)을 리드와이어(6)에 의해 본딩한다.
세로형 호온(8)의 선단의 플레이트에 장착된 모세관(2)의 비틀림중심축으로부터의 오프셋(13)을 변경함으로서, 호온을 교환하는 일없이 진폭의 확대율을 용이하게 변경할 수 있다.
이상과 같이 본 실시예에 의하면, 초음파비틀림진동자를, 초음파비틀림진동자의 비틀림중심축으로부터 오프셋해서 장착된 모세관을 가진 세로형 호온에 장착한 구성으로하므로서, 호온과 작업대가 간섭하는 일이 없기 때문에, 본딩가능범위를 확대할 수 있다. 또, 호온을 세로형으로 하므로서, 호온에 휨이 발생되는 일이 없어지게 되어, 베어칩이 손상되는 일이 없는 고정밀도의 본딩을 행할 수 있다.
모세관을 세로형호온선단의 플레이트에 장착하는 구조로하므로서, 모세관을 장착하는 플레이트의 오프셋량을 변경하므로서 진동의 확대율을 호온을 변경하는 일없이 행할 수 있다.
이상과 같이 본 발명은, 초음파비틀림진동자를, 초음파비틀림진동자의 비틀림 중심선으로부터 오프셋해서 장착된 모세관을 가진 세로형호온에 장착한 구성으로 하므로서, 호온과 작업대가 간섭하는 일이 없게되어, 본딩가능범위를 확대하고, 베어칩이 손상되는 일없이, 고정밀도의 본딩을 행할 수 있는 뛰어난 초음파와이어본딩장치 및 본딩방법을 실현할 수 있는 것이다.

Claims (4)

  1. 리드프레임에 리드와이어를 본딩하는 초음파와이어 본딩장치에 있어서, 모세관과, 상기 모세관지지부재와, 상기 모세관지지부재에 수직으로 배열되어 접속되고, 반대 방향으로 초음파비틀림진동을 발생해서 상기 진동을 상기 모세관지지부재를 개재해서 모세관에 가하는 진동자를 구비하고, 상기 진동자는, 환형상으로 배열되어 반대방향으로 초음파비틀림진동을 발생하고 기둥부재를 개재해서 서로 겹쳐있는 2개의 압전 트랜스듀서를 가진 것을 특징으로 하는 초음파와이어 본딩장치.
  2. 제 1항에 있어서,또, 상기 모세관과 상기 진동자 사이에 배설된 호온을 구비한 것을 특징으로 하는 초음파와이어 본딩장치.
  3. 제 1항에 있어서, 상기 모세관지지부재는 상기 진동자에 분리가능하게 부착되어 있는 것을 특징으로 하는 초음파와이어 본딩장치.
  4. 리드프레임에 기판의 리드와이어를 본딩하는 방법에 있어서, 토오치(torch)에 의해 전기방전을 발생하는 단계와, 모세관에 의해 지지된 와이어의 하단부에 보올(ball)을 형성하는 단계와, 기판위에서 원호궤적으로 모세관을 이동시켜서, 상기 모세관에 수직으로 배열되어 접속되고 반대방향으로 초음파비틀림진동을 발생해서 상기 진동을 상기 모세관에 가하는 진동자에 의해 반대방향으로 발생한 초음파비틀림진동에 의해서 본딩하는 단계로 이루어지고, 상기 진동자는, 환형상으로 배열되어 반대방향으로 초음파비틀림진동을 발생하고 기둥부재를 개재해서 서로 겹쳐있는 2개의 압전트랜스듀서를 가진 것을 특징으로 하는 초음파와이어 본딩방법.
KR1019930021663A 1992-10-26 1993-10-19 초음파 와이어 본딩장치 및 본딩방법 KR0139403B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-287344 1992-10-26
JP4287344A JP2812104B2 (ja) 1992-10-26 1992-10-26 超音波ワイヤボンディング装置

Publications (2)

Publication Number Publication Date
KR940010178A KR940010178A (ko) 1994-05-24
KR0139403B1 true KR0139403B1 (ko) 1998-07-15

Family

ID=17716161

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930021663A KR0139403B1 (ko) 1992-10-26 1993-10-19 초음파 와이어 본딩장치 및 본딩방법

Country Status (3)

Country Link
US (1) US5326014A (ko)
JP (1) JP2812104B2 (ko)
KR (1) KR0139403B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5996877A (en) * 1996-12-19 1999-12-07 Texas Instruments Incorporated Stepwise autorotation of wire bonding capillary
US5782403A (en) * 1997-01-06 1998-07-21 International Business Machines Corporation Ultrasonic chip removal method and apparatus
US5930666A (en) * 1997-10-09 1999-07-27 Astralux, Incorporated Method and apparatus for packaging high temperature solid state electronic devices
JP3942738B2 (ja) 1998-07-17 2007-07-11 松下電器産業株式会社 バンプ接合装置及び方法、並びに半導体部品製造装置
JP3430095B2 (ja) * 1999-12-03 2003-07-28 株式会社アルテクス 超音波振動接合用ツール
JP3568496B2 (ja) * 2001-07-06 2004-09-22 株式会社アルテクス 超音波ワイヤボンディング用共振器
JP5177135B2 (ja) 2007-05-08 2013-04-03 日本電気株式会社 音声合成装置、音声合成方法及び音声合成プログラム
WO2019210937A1 (de) * 2018-05-01 2019-11-07 Telsonic Holding Ag Verdrehschweisswerkzeug, verdrehschweissvorrichtung, verfahren zum verdrehschweissen und damit gefertigtes bauteil
US11404393B2 (en) * 2018-08-23 2022-08-02 Kaijo Corporation Wire bonding method and wire bonding device
CN111570992B (zh) * 2020-05-29 2021-11-12 永康市精进科技有限公司 一种用于超声波金属焊接机的焊头结构
DE102020124171A1 (de) 2020-09-16 2022-03-17 Danfoss Silicon Power Gmbh Elektronisches Modul und Verfahren zum Verbinden von mehreren Leitern mit einem Substrat
US11691214B2 (en) * 2021-10-17 2023-07-04 Shinkawa Ltd. Ultrasound horn

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1506164A (en) * 1974-07-09 1978-04-05 Mullard Ltd Ultrasonic bonding apparatus
JPS5845815B2 (ja) * 1975-04-25 1983-10-12 株式会社日立製作所 ワイヤボンディング装置
JPS5855664A (ja) * 1981-09-28 1983-04-02 株式会社日立製作所 冷凍装置用アキユムレ−タ
JPS643053A (en) * 1987-03-22 1989-01-06 Sumitomo Electric Ind Ltd Production of superconducting material
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
JPH03250640A (ja) * 1990-02-28 1991-11-08 Shimada Phys & Chem Ind Co Ltd 超音波ワイヤーボンディング装置
JP2665080B2 (ja) * 1991-08-02 1997-10-22 山形日本電気株式会社 半導体製造装置

Also Published As

Publication number Publication date
KR940010178A (ko) 1994-05-24
JP2812104B2 (ja) 1998-10-22
US5326014A (en) 1994-07-05
JPH06140475A (ja) 1994-05-20

Similar Documents

Publication Publication Date Title
KR0139403B1 (ko) 초음파 와이어 본딩장치 및 본딩방법
KR100571306B1 (ko) 초음파 트랜스듀서 조립체
US5494207A (en) Wire bonder transducer arrangement and method
US7997470B2 (en) Flanged transducer having improved rigidity
JP3245445B2 (ja) ワイヤボンデイング装置
CN1111035A (zh) 超声波引线焊接装置
US7303110B2 (en) Flange-mounted transducer
JPH08153759A (ja) シングルポイントボンダーおよび半導体装置の製造方法
US20030076661A1 (en) Electronic elements mounting apparatus
JP2006239749A (ja) 超音波接合方法および超音波接合装置
WO2022264225A1 (ja) 超音波ホーンおよび半導体装置の製造装置
Tsujino et al. Welding characteristics of ultrasonic wire bonding using high-frequency vibration systems
JP2003059972A (ja) ボンディングヘッド及びこれを備えたボンディング装置
JPH07266420A (ja) 超音波溶着装置
JPH0653291A (ja) ワイヤボンディング装置
JP3487166B2 (ja) 電子部品のボンディングツールおよびボンディング装置
JPH04372146A (ja) ワイヤボンディング装置
JPH0555311A (ja) ボンデイング装置
JP3866150B2 (ja) ボンディングヘッド及びこれを備えたボンディング装置
JP3409688B2 (ja) 電子部品のボンディングツールおよびボンディング装置
JPH0652146U (ja) 超音波ホーン及びこれを具備したボンディング装置
JPS62249437A (ja) ボンデイング装置
JPH1056034A (ja) ボンディング装置
JP2019110155A (ja) 電子部品ボンディングツール
JPH09288096A (ja) 微小体の振動形態検出装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050225

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee