JPWO2025017981A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2025017981A5 JPWO2025017981A5 JP2024554238A JP2024554238A JPWO2025017981A5 JP WO2025017981 A5 JPWO2025017981 A5 JP WO2025017981A5 JP 2024554238 A JP2024554238 A JP 2024554238A JP 2024554238 A JP2024554238 A JP 2024554238A JP WO2025017981 A5 JPWO2025017981 A5 JP WO2025017981A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- film
- compound
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023115732 | 2023-07-14 | ||
| JP2023115732 | 2023-07-14 | ||
| PCT/JP2024/014280 WO2025017981A1 (ja) | 2023-07-14 | 2024-04-08 | 半導体素子の製造方法及び半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025017981A1 JPWO2025017981A1 (https=) | 2025-01-23 |
| JP7659708B1 JP7659708B1 (ja) | 2025-04-09 |
| JPWO2025017981A5 true JPWO2025017981A5 (https=) | 2025-06-24 |
Family
ID=94281866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024554238A Active JP7659708B1 (ja) | 2023-07-14 | 2024-04-08 | 半導体素子の製造方法及び半導体素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250081500A1 (https=) |
| EP (1) | EP4521878A4 (https=) |
| JP (1) | JP7659708B1 (https=) |
| KR (2) | KR102936129B1 (https=) |
| CN (1) | CN119654979A (https=) |
| TW (1) | TWI910617B (https=) |
| WO (1) | WO2025017981A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120711792B (zh) * | 2025-08-12 | 2025-12-16 | 合肥晶合集成电路股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100390523B1 (ko) * | 2001-01-20 | 2003-07-04 | 주승기 | 실리콘 박막 결정화 방법 |
| KR100611744B1 (ko) | 2003-11-22 | 2006-08-10 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
| KR100623228B1 (ko) * | 2003-11-27 | 2006-09-18 | 삼성에스디아이 주식회사 | 박막트랜지스터, 상기 박막트랜지스터를 구비하는유기전계발광표시장치 및 상기 박막트랜지스터의 제조방법 |
| JP2007251030A (ja) * | 2006-03-17 | 2007-09-27 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| TWI392092B (zh) * | 2008-11-10 | 2013-04-01 | 國立中山大學 | 具π型半導體導通層之半導體裝置及其製造方法 |
| CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
| JP2014175348A (ja) | 2013-03-06 | 2014-09-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2014179465A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| CN105244414B (zh) * | 2015-10-20 | 2017-04-12 | 华中科技大学 | 一种二硫化钼/ 硅异质结太阳能电池及其制备方法 |
| US9780103B2 (en) * | 2015-11-16 | 2017-10-03 | Micron Technology, Inc. | Methods of forming integrated structures |
| JP2017174860A (ja) * | 2016-03-18 | 2017-09-28 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
| CN108022934A (zh) * | 2016-11-01 | 2018-05-11 | 沈阳硅基科技有限公司 | 一种薄膜的制备方法 |
| KR102403102B1 (ko) * | 2016-12-15 | 2022-05-26 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 처리 장치 |
| JP2018157069A (ja) * | 2017-03-17 | 2018-10-04 | 東芝メモリ株式会社 | 半導体記憶装置 |
| JP7013295B2 (ja) | 2018-03-20 | 2022-01-31 | キオクシア株式会社 | 半導体記憶装置 |
| JP7371507B2 (ja) * | 2020-01-22 | 2023-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| FR3106932B1 (fr) * | 2020-02-04 | 2023-10-27 | Commissariat Energie Atomique | Procede de fabrication d’un substrat structure |
| CN112786614B (zh) | 2021-03-22 | 2022-04-29 | 长江存储科技有限责任公司 | 制备三维存储器的方法 |
| CN115548140A (zh) * | 2022-10-20 | 2022-12-30 | 中建材浚鑫科技有限公司 | 一种金属化异质结电池及其制备方法 |
-
2024
- 2024-04-08 KR KR1020257023267A patent/KR102936129B1/ko active Active
- 2024-04-08 EP EP24798710.0A patent/EP4521878A4/en active Pending
- 2024-04-08 WO PCT/JP2024/014280 patent/WO2025017981A1/ja active Pending
- 2024-04-08 KR KR1020247028711A patent/KR102835288B1/ko active Active
- 2024-04-08 JP JP2024554238A patent/JP7659708B1/ja active Active
- 2024-04-08 CN CN202480002783.9A patent/CN119654979A/zh active Pending
- 2024-04-25 TW TW113115473A patent/TWI910617B/zh active
- 2024-11-11 US US18/943,526 patent/US20250081500A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100656495B1 (ko) | 박막트랜지스터 및 그 제조 방법 | |
| TW201119043A (en) | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same | |
| JPH1187243A5 (https=) | ||
| KR100666564B1 (ko) | 박막트랜지스터의 제조 방법 | |
| JPH10242476A5 (https=) | ||
| JPWO2025017981A5 (https=) | ||
| RU2009123511A (ru) | Стальной лист, имеющий высокую интеграцию плоскостей {222}, и способ его производства | |
| JP2010206200A (ja) | 有機電界発光表示装置及びその製造方法 | |
| JP2003031806A5 (https=) | ||
| CN102214556B (zh) | 使非晶硅层结晶的方法、薄膜晶体管及其制造方法 | |
| JP2010206201A (ja) | 多結晶シリコン層の製造方法 | |
| TWI265200B (en) | Retarding agglomeration of Ni monosilicide using Ni alloys | |
| CN1976006A (zh) | 形成半导体结构的方法 | |
| WO2020175971A1 (ko) | 고순도 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 | |
| JP2010502025A5 (https=) | ||
| JP5593250B2 (ja) | 光電変換装置 | |
| CN100536075C (zh) | 制造薄膜晶体管的方法 | |
| JP7659708B1 (ja) | 半導体素子の製造方法及び半導体素子 | |
| JP2008500728A5 (https=) | ||
| JP2003168652A5 (https=) | ||
| JP2006128654A5 (https=) | ||
| JP2001036078A5 (https=) | ||
| JP2001319880A5 (https=) | ||
| JP4009719B2 (ja) | ニッケルシリサイド膜の作製方法 | |
| JP2002184695A5 (https=) |