JPWO2025017981A1 - - Google Patents
Info
- Publication number
- JPWO2025017981A1 JPWO2025017981A1 JP2024554238A JP2024554238A JPWO2025017981A1 JP WO2025017981 A1 JPWO2025017981 A1 JP WO2025017981A1 JP 2024554238 A JP2024554238 A JP 2024554238A JP 2024554238 A JP2024554238 A JP 2024554238A JP WO2025017981 A1 JPWO2025017981 A1 JP WO2025017981A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
- H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023115732 | 2023-07-14 | ||
| JP2023115732 | 2023-07-14 | ||
| PCT/JP2024/014280 WO2025017981A1 (ja) | 2023-07-14 | 2024-04-08 | 半導体素子の製造方法及び半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025017981A1 true JPWO2025017981A1 (https=) | 2025-01-23 |
| JP7659708B1 JP7659708B1 (ja) | 2025-04-09 |
| JPWO2025017981A5 JPWO2025017981A5 (https=) | 2025-06-24 |
Family
ID=94281866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024554238A Active JP7659708B1 (ja) | 2023-07-14 | 2024-04-08 | 半導体素子の製造方法及び半導体素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250081500A1 (https=) |
| EP (1) | EP4521878A4 (https=) |
| JP (1) | JP7659708B1 (https=) |
| KR (2) | KR102936129B1 (https=) |
| CN (1) | CN119654979A (https=) |
| TW (1) | TWI910617B (https=) |
| WO (1) | WO2025017981A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120711792B (zh) * | 2025-08-12 | 2025-12-16 | 合肥晶合集成电路股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100390523B1 (ko) * | 2001-01-20 | 2003-07-04 | 주승기 | 실리콘 박막 결정화 방법 |
| KR100611744B1 (ko) | 2003-11-22 | 2006-08-10 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
| KR100623228B1 (ko) * | 2003-11-27 | 2006-09-18 | 삼성에스디아이 주식회사 | 박막트랜지스터, 상기 박막트랜지스터를 구비하는유기전계발광표시장치 및 상기 박막트랜지스터의 제조방법 |
| JP2007251030A (ja) * | 2006-03-17 | 2007-09-27 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| TWI392092B (zh) * | 2008-11-10 | 2013-04-01 | 國立中山大學 | 具π型半導體導通層之半導體裝置及其製造方法 |
| CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
| JP2014175348A (ja) | 2013-03-06 | 2014-09-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2014179465A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| CN105244414B (zh) * | 2015-10-20 | 2017-04-12 | 华中科技大学 | 一种二硫化钼/ 硅异质结太阳能电池及其制备方法 |
| US9780103B2 (en) * | 2015-11-16 | 2017-10-03 | Micron Technology, Inc. | Methods of forming integrated structures |
| JP2017174860A (ja) * | 2016-03-18 | 2017-09-28 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
| CN108022934A (zh) * | 2016-11-01 | 2018-05-11 | 沈阳硅基科技有限公司 | 一种薄膜的制备方法 |
| KR102403102B1 (ko) * | 2016-12-15 | 2022-05-26 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 처리 장치 |
| JP2018157069A (ja) * | 2017-03-17 | 2018-10-04 | 東芝メモリ株式会社 | 半導体記憶装置 |
| JP7013295B2 (ja) | 2018-03-20 | 2022-01-31 | キオクシア株式会社 | 半導体記憶装置 |
| JP7371507B2 (ja) * | 2020-01-22 | 2023-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| FR3106932B1 (fr) * | 2020-02-04 | 2023-10-27 | Commissariat Energie Atomique | Procede de fabrication d’un substrat structure |
| CN112786614B (zh) | 2021-03-22 | 2022-04-29 | 长江存储科技有限责任公司 | 制备三维存储器的方法 |
| CN115548140A (zh) * | 2022-10-20 | 2022-12-30 | 中建材浚鑫科技有限公司 | 一种金属化异质结电池及其制备方法 |
-
2024
- 2024-04-08 KR KR1020257023267A patent/KR102936129B1/ko active Active
- 2024-04-08 EP EP24798710.0A patent/EP4521878A4/en active Pending
- 2024-04-08 WO PCT/JP2024/014280 patent/WO2025017981A1/ja active Pending
- 2024-04-08 KR KR1020247028711A patent/KR102835288B1/ko active Active
- 2024-04-08 JP JP2024554238A patent/JP7659708B1/ja active Active
- 2024-04-08 CN CN202480002783.9A patent/CN119654979A/zh active Pending
- 2024-04-25 TW TW113115473A patent/TWI910617B/zh active
- 2024-11-11 US US18/943,526 patent/US20250081500A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250111390A (ko) | 2025-07-22 |
| JP7659708B1 (ja) | 2025-04-09 |
| KR102936129B1 (ko) | 2026-03-09 |
| KR20250013142A (ko) | 2025-01-31 |
| TW202519029A (zh) | 2025-05-01 |
| WO2025017981A1 (ja) | 2025-01-23 |
| EP4521878A1 (en) | 2025-03-12 |
| KR102835288B1 (ko) | 2025-07-18 |
| CN119654979A (zh) | 2025-03-18 |
| US20250081500A1 (en) | 2025-03-06 |
| EP4521878A4 (en) | 2026-04-29 |
| TWI910617B (zh) | 2026-01-01 |
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