JP2003031806A5 - - Google Patents

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Publication number
JP2003031806A5
JP2003031806A5 JP2002116977A JP2002116977A JP2003031806A5 JP 2003031806 A5 JP2003031806 A5 JP 2003031806A5 JP 2002116977 A JP2002116977 A JP 2002116977A JP 2002116977 A JP2002116977 A JP 2002116977A JP 2003031806 A5 JP2003031806 A5 JP 2003031806A5
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JP
Japan
Prior art keywords
film
mos transistor
transistor according
polycrystalline silicon
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002116977A
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English (en)
Japanese (ja)
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JP2003031806A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002116977A priority Critical patent/JP2003031806A/ja
Priority claimed from JP2002116977A external-priority patent/JP2003031806A/ja
Priority to US10/143,192 priority patent/US6905928B2/en
Publication of JP2003031806A publication Critical patent/JP2003031806A/ja
Priority to US10/642,036 priority patent/US20040145001A1/en
Priority to US10/641,908 priority patent/US6870224B2/en
Publication of JP2003031806A5 publication Critical patent/JP2003031806A5/ja
Pending legal-status Critical Current

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JP2002116977A 2001-05-09 2002-04-19 Ｍｏｓトランジスタ及びその製造方法 Pending JP2003031806A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002116977A JP2003031806A (ja) 2001-05-09 2002-04-19 Ｍｏｓトランジスタ及びその製造方法
US10/143,192 US6905928B2 (en) 2001-05-09 2002-05-09 MOS transistor apparatus and method of manufacturing same
US10/642,036 US20040145001A1 (en) 2001-05-09 2003-08-15 MOS transistor devices and method of manufacturing same
US10/641,908 US6870224B2 (en) 2001-05-09 2003-08-15 MOS transistor apparatus and method of manufacturing same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-138520 2001-05-09
JP2001138520 2001-05-09
JP2002116977A JP2003031806A (ja) 2001-05-09 2002-04-19 Ｍｏｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003031806A JP2003031806A (ja) 2003-01-31
JP2003031806A5 true JP2003031806A5 (https=) 2005-09-22

Family

ID=26614809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002116977A Pending JP2003031806A (ja) 2001-05-09 2002-04-19 Ｍｏｓトランジスタ及びその製造方法

Country Status (2)

Country Link
US (3) US6905928B2 (https=)
JP (1) JP2003031806A (https=)

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US6784103B1 (en) * 2003-05-21 2004-08-31 Freescale Semiconductor, Inc. Method of formation of nanocrystals on a semiconductor structure
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US8461628B2 (en) * 2005-03-18 2013-06-11 Kovio, Inc. MOS transistor with laser-patterned metal gate, and method for making the same
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JP2007165401A (ja) * 2005-12-09 2007-06-28 Nec Electronics Corp 半導体装置および半導体装置の製造方法
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US20080272437A1 (en) * 2007-05-01 2008-11-06 Doris Bruce B Threshold Adjustment for High-K Gate Dielectric CMOS
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US20090065816A1 (en) * 2007-09-11 2009-03-12 Applied Materials, Inc. Modulating the stress of poly-crystaline silicon films and surrounding layers through the use of dopants and multi-layer silicon films with controlled crystal structure
JP4892579B2 (ja) * 2009-03-30 2012-03-07 株式会社日立国際電気 半導体装置の製造方法
US8598020B2 (en) * 2010-06-25 2013-12-03 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of crystalline germanium
JP5624425B2 (ja) * 2010-10-14 2014-11-12 株式会社東芝 半導体装置及びその製造方法
US10367089B2 (en) * 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
US9698019B2 (en) * 2014-03-14 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. N-work function metal with crystal structure
JP6560112B2 (ja) * 2015-12-09 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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