JP2002184695A5 - - Google Patents

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Publication number
JP2002184695A5
JP2002184695A5 JP2000384543A JP2000384543A JP2002184695A5 JP 2002184695 A5 JP2002184695 A5 JP 2002184695A5 JP 2000384543 A JP2000384543 A JP 2000384543A JP 2000384543 A JP2000384543 A JP 2000384543A JP 2002184695 A5 JP2002184695 A5 JP 2002184695A5
Authority
JP
Japan
Prior art keywords
semiconductor film
impurity region
periodic table
group
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000384543A
Other languages
English (en)
Japanese (ja)
Other versions
JP4316132B2 (ja
JP2002184695A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000384543A priority Critical patent/JP4316132B2/ja
Priority claimed from JP2000384543A external-priority patent/JP4316132B2/ja
Priority to US10/020,961 priority patent/US7045444B2/en
Publication of JP2002184695A publication Critical patent/JP2002184695A/ja
Publication of JP2002184695A5 publication Critical patent/JP2002184695A5/ja
Priority to US11/404,923 priority patent/US7821005B2/en
Application granted granted Critical
Publication of JP4316132B2 publication Critical patent/JP4316132B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000384543A 2000-12-19 2000-12-19 半導体装置の作製方法 Expired - Fee Related JP4316132B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000384543A JP4316132B2 (ja) 2000-12-19 2000-12-19 半導体装置の作製方法
US10/020,961 US7045444B2 (en) 2000-12-19 2001-12-19 Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US11/404,923 US7821005B2 (en) 2000-12-19 2006-04-17 Method of manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000384543A JP4316132B2 (ja) 2000-12-19 2000-12-19 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002184695A JP2002184695A (ja) 2002-06-28
JP2002184695A5 true JP2002184695A5 (https=) 2005-08-11
JP4316132B2 JP4316132B2 (ja) 2009-08-19

Family

ID=18851970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000384543A Expired - Fee Related JP4316132B2 (ja) 2000-12-19 2000-12-19 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4316132B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884735B2 (ja) * 2005-09-16 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2008156040A1 (en) * 2007-06-20 2008-12-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7795111B2 (en) * 2007-06-27 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device

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