JP2002184695A5 - - Google Patents
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- Publication number
- JP2002184695A5 JP2002184695A5 JP2000384543A JP2000384543A JP2002184695A5 JP 2002184695 A5 JP2002184695 A5 JP 2002184695A5 JP 2000384543 A JP2000384543 A JP 2000384543A JP 2000384543 A JP2000384543 A JP 2000384543A JP 2002184695 A5 JP2002184695 A5 JP 2002184695A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- impurity region
- periodic table
- group
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 70
- 239000012535 impurity Substances 0.000 claims 39
- 229910052751 metal Inorganic materials 0.000 claims 25
- 239000002184 metal Substances 0.000 claims 21
- 230000000737 periodic effect Effects 0.000 claims 20
- 238000010438 heat treatment Methods 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- 239000013078 crystal Substances 0.000 claims 12
- 238000005247 gettering Methods 0.000 claims 10
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052795 boron group element Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052696 pnictogen Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000384543A JP4316132B2 (ja) | 2000-12-19 | 2000-12-19 | 半導体装置の作製方法 |
| US10/020,961 US7045444B2 (en) | 2000-12-19 | 2001-12-19 | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| US11/404,923 US7821005B2 (en) | 2000-12-19 | 2006-04-17 | Method of manufacturing semiconductor device and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000384543A JP4316132B2 (ja) | 2000-12-19 | 2000-12-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002184695A JP2002184695A (ja) | 2002-06-28 |
| JP2002184695A5 true JP2002184695A5 (https=) | 2005-08-11 |
| JP4316132B2 JP4316132B2 (ja) | 2009-08-19 |
Family
ID=18851970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000384543A Expired - Fee Related JP4316132B2 (ja) | 2000-12-19 | 2000-12-19 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4316132B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4884735B2 (ja) * | 2005-09-16 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2008156040A1 (en) * | 2007-06-20 | 2008-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7795111B2 (en) * | 2007-06-27 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
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2000
- 2000-12-19 JP JP2000384543A patent/JP4316132B2/ja not_active Expired - Fee Related