JPWO2024142638A5 - - Google Patents
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- Publication number
- JPWO2024142638A5 JPWO2024142638A5 JP2024567276A JP2024567276A JPWO2024142638A5 JP WO2024142638 A5 JPWO2024142638 A5 JP WO2024142638A5 JP 2024567276 A JP2024567276 A JP 2024567276A JP 2024567276 A JP2024567276 A JP 2024567276A JP WO2024142638 A5 JPWO2024142638 A5 JP WO2024142638A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- interlayer insulating
- semiconductor substrate
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 43
- 239000000758 substrate Substances 0.000 claims 19
- 239000011229 interlayer Substances 0.000 claims 17
- 229910021341 titanium silicide Inorganic materials 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 10
- 230000008021 deposition Effects 0.000 claims 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 3
- 238000004544 sputter deposition Methods 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022210419 | 2022-12-27 | ||
| PCT/JP2023/041006 WO2024142638A1 (ja) | 2022-12-27 | 2023-11-14 | 半導体装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024142638A1 JPWO2024142638A1 (https=) | 2024-07-04 |
| JPWO2024142638A5 true JPWO2024142638A5 (https=) | 2025-02-06 |
Family
ID=91716968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567276A Pending JPWO2024142638A1 (https=) | 2022-12-27 | 2023-11-14 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250095996A1 (https=) |
| JP (1) | JPWO2024142638A1 (https=) |
| CN (1) | CN119302054A (https=) |
| WO (1) | WO2024142638A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119486181B (zh) * | 2025-01-15 | 2025-04-01 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003318395A (ja) * | 2002-04-19 | 2003-11-07 | Hitachi Ltd | 半導体装置の製造方法 |
| WO2007060797A1 (ja) * | 2005-11-28 | 2007-05-31 | Nec Corporation | 半導体装置およびその製造方法 |
| JP5122762B2 (ja) * | 2006-03-07 | 2013-01-16 | 株式会社東芝 | 電力用半導体素子、その製造方法及びその駆動方法 |
| JP4939839B2 (ja) * | 2006-05-30 | 2012-05-30 | 株式会社東芝 | 半導体整流素子 |
| JP6286823B2 (ja) * | 2012-12-26 | 2018-03-07 | 日産自動車株式会社 | 半導体装置の製造方法 |
| JP6286824B2 (ja) * | 2012-12-26 | 2018-03-07 | 日産自動車株式会社 | 半導体装置およびその製造方法 |
| JP5939448B2 (ja) * | 2013-04-30 | 2016-06-22 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
| JP2016032016A (ja) * | 2014-07-29 | 2016-03-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP6582537B2 (ja) * | 2015-05-13 | 2019-10-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7490995B2 (ja) * | 2020-03-17 | 2024-05-28 | 富士電機株式会社 | 炭化珪素半導体装置 |
| JP7735629B2 (ja) * | 2020-05-25 | 2025-09-09 | ミネベアパワーデバイス株式会社 | 半導体装置および電力変換装置 |
| JP7427566B2 (ja) * | 2020-09-16 | 2024-02-05 | 株式会社東芝 | 半導体装置 |
| CN116348995A (zh) * | 2021-05-19 | 2023-06-27 | 富士电机株式会社 | 半导体装置及制造方法 |
-
2023
- 2023-11-14 WO PCT/JP2023/041006 patent/WO2024142638A1/ja not_active Ceased
- 2023-11-14 JP JP2024567276A patent/JPWO2024142638A1/ja active Pending
- 2023-11-14 CN CN202380042564.9A patent/CN119302054A/zh active Pending
-
2024
- 2024-11-27 US US18/962,850 patent/US20250095996A1/en active Pending
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