JPWO2024142638A1 - - Google Patents

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Publication number
JPWO2024142638A1
JPWO2024142638A1 JP2024567276A JP2024567276A JPWO2024142638A1 JP WO2024142638 A1 JPWO2024142638 A1 JP WO2024142638A1 JP 2024567276 A JP2024567276 A JP 2024567276A JP 2024567276 A JP2024567276 A JP 2024567276A JP WO2024142638 A1 JPWO2024142638 A1 JP WO2024142638A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567276A
Other languages
Japanese (ja)
Other versions
JPWO2024142638A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024142638A1 publication Critical patent/JPWO2024142638A1/ja
Publication of JPWO2024142638A5 publication Critical patent/JPWO2024142638A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
JP2024567276A 2022-12-27 2023-11-14 Pending JPWO2024142638A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022210419 2022-12-27
PCT/JP2023/041006 WO2024142638A1 (ja) 2022-12-27 2023-11-14 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024142638A1 true JPWO2024142638A1 (https=) 2024-07-04
JPWO2024142638A5 JPWO2024142638A5 (https=) 2025-02-06

Family

ID=91716968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567276A Pending JPWO2024142638A1 (https=) 2022-12-27 2023-11-14

Country Status (4)

Country Link
US (1) US20250095996A1 (https=)
JP (1) JPWO2024142638A1 (https=)
CN (1) CN119302054A (https=)
WO (1) WO2024142638A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119486181B (zh) * 2025-01-15 2025-04-01 合肥晶合集成电路股份有限公司 一种半导体器件及其制作方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318395A (ja) * 2002-04-19 2003-11-07 Hitachi Ltd 半導体装置の製造方法
WO2007060797A1 (ja) * 2005-11-28 2007-05-31 Nec Corporation 半導体装置およびその製造方法
JP2007273931A (ja) * 2006-03-07 2007-10-18 Toshiba Corp 電力用半導体素子、その製造方法及びその駆動方法
JP2007324218A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体整流素子
JP2014127547A (ja) * 2012-12-26 2014-07-07 Nissan Motor Co Ltd 半導体装置の製造方法
JP2014127548A (ja) * 2012-12-26 2014-07-07 Nissan Motor Co Ltd 半導体装置およびその製造方法
WO2014178262A1 (ja) * 2013-04-30 2014-11-06 日産自動車株式会社 半導体装置及びその製造方法
JP2016032016A (ja) * 2014-07-29 2016-03-07 日本電気株式会社 半導体装置およびその製造方法
JP2016213414A (ja) * 2015-05-13 2016-12-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2021150407A (ja) * 2020-03-17 2021-09-27 富士電機株式会社 炭化珪素半導体装置
JP2021185593A (ja) * 2020-05-25 2021-12-09 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2022049608A (ja) * 2020-09-16 2022-03-29 株式会社東芝 半導体装置
WO2022244802A1 (ja) * 2021-05-19 2022-11-24 富士電機株式会社 半導体装置および製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318395A (ja) * 2002-04-19 2003-11-07 Hitachi Ltd 半導体装置の製造方法
WO2007060797A1 (ja) * 2005-11-28 2007-05-31 Nec Corporation 半導体装置およびその製造方法
JP2007273931A (ja) * 2006-03-07 2007-10-18 Toshiba Corp 電力用半導体素子、その製造方法及びその駆動方法
JP2007324218A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体整流素子
JP2014127547A (ja) * 2012-12-26 2014-07-07 Nissan Motor Co Ltd 半導体装置の製造方法
JP2014127548A (ja) * 2012-12-26 2014-07-07 Nissan Motor Co Ltd 半導体装置およびその製造方法
WO2014178262A1 (ja) * 2013-04-30 2014-11-06 日産自動車株式会社 半導体装置及びその製造方法
JP2016032016A (ja) * 2014-07-29 2016-03-07 日本電気株式会社 半導体装置およびその製造方法
JP2016213414A (ja) * 2015-05-13 2016-12-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2021150407A (ja) * 2020-03-17 2021-09-27 富士電機株式会社 炭化珪素半導体装置
JP2021185593A (ja) * 2020-05-25 2021-12-09 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2022049608A (ja) * 2020-09-16 2022-03-29 株式会社東芝 半導体装置
WO2022244802A1 (ja) * 2021-05-19 2022-11-24 富士電機株式会社 半導体装置および製造方法

Also Published As

Publication number Publication date
US20250095996A1 (en) 2025-03-20
WO2024142638A1 (ja) 2024-07-04
CN119302054A (zh) 2025-01-10

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