JPWO2023223127A5 - - Google Patents

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Publication number
JPWO2023223127A5
JPWO2023223127A5 JP2024521383A JP2024521383A JPWO2023223127A5 JP WO2023223127 A5 JPWO2023223127 A5 JP WO2023223127A5 JP 2024521383 A JP2024521383 A JP 2024521383A JP 2024521383 A JP2024521383 A JP 2024521383A JP WO2023223127 A5 JPWO2023223127 A5 JP WO2023223127A5
Authority
JP
Japan
Prior art keywords
conductor
insulator
oxide semiconductor
region located
located above
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024521383A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023223127A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2023/054529 external-priority patent/WO2023223127A1/ja
Publication of JPWO2023223127A1 publication Critical patent/JPWO2023223127A1/ja
Publication of JPWO2023223127A5 publication Critical patent/JPWO2023223127A5/ja
Pending legal-status Critical Current

Links

JP2024521383A 2022-05-16 2023-05-02 Pending JPWO2023223127A1 (https=)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022080414 2022-05-16
JP2022104506 2022-06-29
JP2022152927 2022-09-26
PCT/IB2023/054529 WO2023223127A1 (ja) 2022-05-16 2023-05-02 半導体装置、記憶装置及び電子機器

Publications (2)

Publication Number Publication Date
JPWO2023223127A1 JPWO2023223127A1 (https=) 2023-11-23
JPWO2023223127A5 true JPWO2023223127A5 (https=) 2026-04-24

Family

ID=88834858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024521383A Pending JPWO2023223127A1 (https=) 2022-05-16 2023-05-02

Country Status (5)

Country Link
US (1) US20250287648A1 (https=)
JP (1) JPWO2023223127A1 (https=)
KR (1) KR20250011126A (https=)
CN (1) CN120359818A (https=)
WO (1) WO2023223127A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101698193B1 (ko) 2009-09-15 2017-01-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP2015084418A (ja) * 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6607681B2 (ja) * 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
WO2015159179A1 (en) * 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
JP2020123612A (ja) * 2019-01-29 2020-08-13 株式会社半導体エネルギー研究所 半導体装置の製造方法、半導体装置の製造装置
JP7459079B2 (ja) * 2019-05-23 2024-04-01 株式会社半導体エネルギー研究所 半導体装置
CN114258586A (zh) * 2019-08-22 2022-03-29 株式会社半导体能源研究所 存储单元及存储装置

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