JPWO2023219013A5 - - Google Patents
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- Publication number
- JPWO2023219013A5 JPWO2023219013A5 JP2024520410A JP2024520410A JPWO2023219013A5 JP WO2023219013 A5 JPWO2023219013 A5 JP WO2023219013A5 JP 2024520410 A JP2024520410 A JP 2024520410A JP 2024520410 A JP2024520410 A JP 2024520410A JP WO2023219013 A5 JPWO2023219013 A5 JP WO2023219013A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- semiconductor layer
- anode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 28
- 210000000746 body region Anatomy 0.000 claims 4
- 238000002955 isolation Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022078854 | 2022-05-12 | ||
| PCT/JP2023/016848 WO2023219013A1 (ja) | 2022-05-12 | 2023-04-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023219013A1 JPWO2023219013A1 (https=) | 2023-11-16 |
| JPWO2023219013A5 true JPWO2023219013A5 (https=) | 2025-01-23 |
Family
ID=88730501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024520410A Pending JPWO2023219013A1 (https=) | 2022-05-12 | 2023-04-28 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023219013A1 (https=) |
| WO (1) | WO2023219013A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997013279A1 (en) * | 1995-10-02 | 1997-04-10 | Siliconix Incorporated | Trench-gated mosfet including integral temperature detection diode |
| JP6512025B2 (ja) * | 2015-08-11 | 2019-05-15 | 富士電機株式会社 | 半導体素子及び半導体素子の製造方法 |
| US20190172770A1 (en) * | 2017-12-05 | 2019-06-06 | Infineon Technologies Austria Ag | Semiconductor Device with Integrated pn Diode Temperature Sensor |
| JP7206652B2 (ja) * | 2018-03-30 | 2023-01-18 | 富士電機株式会社 | 半導体装置、半導体パッケージ、半導体モジュール、および半導体回路装置 |
| JP7167881B2 (ja) * | 2019-08-27 | 2022-11-09 | 株式会社デンソー | 半導体装置 |
-
2023
- 2023-04-28 JP JP2024520410A patent/JPWO2023219013A1/ja active Pending
- 2023-04-28 WO PCT/JP2023/016848 patent/WO2023219013A1/ja not_active Ceased
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