JPWO2023188970A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2023188970A5 JPWO2023188970A5 JP2024511421A JP2024511421A JPWO2023188970A5 JP WO2023188970 A5 JPWO2023188970 A5 JP WO2023188970A5 JP 2024511421 A JP2024511421 A JP 2024511421A JP 2024511421 A JP2024511421 A JP 2024511421A JP WO2023188970 A5 JPWO2023188970 A5 JP WO2023188970A5
- Authority
- JP
- Japan
- Prior art keywords
- source
- electrode
- semiconductor device
- semiconductor layer
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims 5
- 230000005533 two-dimensional electron gas Effects 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263324387P | 2022-03-28 | 2022-03-28 | |
| US202263324402P | 2022-03-28 | 2022-03-28 | |
| PCT/JP2023/005730 WO2023188970A1 (ja) | 2022-03-28 | 2023-02-17 | 電力増幅用半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023188970A1 JPWO2023188970A1 (https=) | 2023-10-05 |
| JPWO2023188970A5 true JPWO2023188970A5 (https=) | 2024-12-10 |
Family
ID=88200413
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511422A Pending JPWO2023188971A1 (https=) | 2022-03-28 | 2023-02-17 | |
| JP2024511421A Pending JPWO2023188970A1 (https=) | 2022-03-28 | 2023-02-17 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511422A Pending JPWO2023188971A1 (https=) | 2022-03-28 | 2023-02-17 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20250015149A1 (https=) |
| JP (2) | JPWO2023188971A1 (https=) |
| WO (2) | WO2023188971A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3135851B2 (ja) * | 1996-11-11 | 2001-02-19 | 松下電器産業株式会社 | 電界効果トランジスタ、半導体集積回路装置及び電界効果トランジスタの製造方法 |
| US20130175544A1 (en) * | 2010-11-10 | 2013-07-11 | Mitsubishi Electric Corporation | Semiconductor device, and method of manufacturing semiconductor device |
| JP7063186B2 (ja) * | 2018-08-16 | 2022-05-09 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 |
| JP2022016950A (ja) * | 2020-07-13 | 2022-01-25 | 富士通株式会社 | 半導体装置 |
| US11387169B2 (en) * | 2020-08-04 | 2022-07-12 | Nxp Usa, Inc. | Transistor with I/O ports in an active area of the transistor |
-
2023
- 2023-02-17 WO PCT/JP2023/005731 patent/WO2023188971A1/ja not_active Ceased
- 2023-02-17 WO PCT/JP2023/005730 patent/WO2023188970A1/ja not_active Ceased
- 2023-02-17 JP JP2024511422A patent/JPWO2023188971A1/ja active Pending
- 2023-02-17 JP JP2024511421A patent/JPWO2023188970A1/ja active Pending
-
2024
- 2024-09-24 US US18/894,473 patent/US20250015149A1/en active Pending
- 2024-09-24 US US18/894,495 patent/US20250015150A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3944461B2 (ja) | 電界効果型トランジスタおよびその応用装置 | |
| US7812377B2 (en) | Semiconductor device | |
| JP5608322B2 (ja) | 双方向スイッチ | |
| JP7461218B2 (ja) | 半導体装置 | |
| US20070262390A1 (en) | Insulated gate semiconductor device | |
| JP2019197920A (ja) | 半導体装置および半導体モジュール | |
| JP6958575B2 (ja) | 半導体装置およびその製造方法 | |
| JPWO2020189534A5 (https=) | ||
| JPS61256U (ja) | プレ−ナｍｏｓトランジスタ | |
| US8264015B2 (en) | Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor | |
| CN116072697A (zh) | 一种半导体器件及集成电路 | |
| JP2019062160A (ja) | 半導体装置 | |
| TW202005086A (zh) | 具有改良終端結構之氮化鎵電晶體 | |
| JPWO2023176312A5 (https=) | ||
| JP2001028425A (ja) | 半導体装置及びその製造方法 | |
| JPH06244412A (ja) | 高耐圧ｍｉｓ電界効果トランジスタ | |
| JP2877408B2 (ja) | 導電変調型ｍｏｓｆｅｔ | |
| JP3129223B2 (ja) | 半導体装置 | |
| JP2007059882A (ja) | 半導体装置 | |
| US20080093638A1 (en) | Semiconductor Device | |
| JPWO2023188970A5 (https=) | ||
| JP7424782B2 (ja) | 半導体装置 | |
| CN119584595A (zh) | 半导体器件 | |
| JPWO2023188971A5 (https=) | ||
| CN115274653B (zh) | 一种低导通电阻双沟槽栅soi-ldmos版图结构及其形成方法 |