JPWO2023176312A5 - - Google Patents

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JPWO2023176312A5
JPWO2023176312A5 JP2024507629A JP2024507629A JPWO2023176312A5 JP WO2023176312 A5 JPWO2023176312 A5 JP WO2023176312A5 JP 2024507629 A JP2024507629 A JP 2024507629A JP 2024507629 A JP2024507629 A JP 2024507629A JP WO2023176312 A5 JPWO2023176312 A5 JP WO2023176312A5
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Japan
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resistor
active region
semiconductor device
view
plan
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JP2024507629A
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English (en)
Japanese (ja)
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JP7576207B2 (ja
JPWO2023176312A1 (https=
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Priority claimed from PCT/JP2023/005728 external-priority patent/WO2023176312A1/ja
Publication of JPWO2023176312A1 publication Critical patent/JPWO2023176312A1/ja
Publication of JPWO2023176312A5 publication Critical patent/JPWO2023176312A5/ja
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Publication of JP7576207B2 publication Critical patent/JP7576207B2/ja
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JP2024507629A 2022-03-18 2023-02-17 電力増幅用半導体装置 Active JP7576207B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022044441 2022-03-18
JP2022044441 2022-03-18
PCT/JP2023/005728 WO2023176312A1 (ja) 2022-03-18 2023-02-17 電力増幅用半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023176312A1 JPWO2023176312A1 (https=) 2023-09-21
JPWO2023176312A5 true JPWO2023176312A5 (https=) 2024-08-16
JP7576207B2 JP7576207B2 (ja) 2024-10-30

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ID=88023353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024507629A Active JP7576207B2 (ja) 2022-03-18 2023-02-17 電力増幅用半導体装置

Country Status (5)

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US (1) US12317533B2 (https=)
EP (1) EP4478424A4 (https=)
JP (1) JP7576207B2 (https=)
CN (1) CN118843944B (https=)
WO (1) WO2023176312A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024030125A (ja) * 2022-08-23 2024-03-07 住友電気工業株式会社 半導体装置および半導体装置の製造方法
CN118748153A (zh) * 2024-05-21 2024-10-08 厦门市三安集成电路有限公司 漏电测试装置、半导体晶圆片及漏电测试方法
KR102788568B1 (ko) * 2024-06-26 2025-03-31 (주)웨이비스 반도체 소자 및 그 제조방법
WO2026071038A1 (ja) * 2024-09-30 2026-04-02 ヌヴォトンテクノロジージャパン株式会社 半導体装置および制御方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299264A (ja) 1987-05-29 1988-12-06 Fuji Electric Co Ltd 半導体装置
JP2006147665A (ja) 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd トランジスタ半導体装置
EP2161754A3 (en) * 2008-09-03 2010-06-16 Kabushiki Kaisha Toshiba A semiconductor device and fabrication method for the same
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
EP2922093B1 (en) 2014-03-19 2017-05-10 Nxp B.V. Hemt temperature sensor
JP6503202B2 (ja) 2015-03-12 2019-04-17 エイブリック株式会社 半導体装置
JP6263498B2 (ja) * 2015-05-21 2018-01-17 株式会社豊田中央研究所 半導体装置とその製造方法
US20190028066A1 (en) * 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by field plate resistance thermometry
JP2021077797A (ja) * 2019-11-12 2021-05-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
US12068408B2 (en) * 2020-07-15 2024-08-20 Semiconductor Components Industries, Llc High electron mobility transistor
CN115000169A (zh) 2020-08-28 2022-09-02 英诺赛科（珠海）科技有限公司 半导体装置结构
CN113793870A (zh) * 2021-11-16 2021-12-14 深圳市时代速信科技有限公司 一种半导体器件及其制备方法
CN117941075A (zh) * 2021-12-31 2024-04-26 英诺赛科(苏州)半导体有限公司 氮化物基半导体器件及其操作方法

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