JPWO2023188971A5 - - Google Patents
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- Publication number
- JPWO2023188971A5 JPWO2023188971A5 JP2024511422A JP2024511422A JPWO2023188971A5 JP WO2023188971 A5 JPWO2023188971 A5 JP WO2023188971A5 JP 2024511422 A JP2024511422 A JP 2024511422A JP 2024511422 A JP2024511422 A JP 2024511422A JP WO2023188971 A5 JPWO2023188971 A5 JP WO2023188971A5
- Authority
- JP
- Japan
- Prior art keywords
- unit
- semiconductor layer
- electrode
- source
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000005533 two-dimensional electron gas Effects 0.000 claims 5
- 230000003321 amplification Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263324387P | 2022-03-28 | 2022-03-28 | |
| US202263324402P | 2022-03-28 | 2022-03-28 | |
| PCT/JP2023/005731 WO2023188971A1 (ja) | 2022-03-28 | 2023-02-17 | 電力増幅用半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023188971A1 JPWO2023188971A1 (https=) | 2023-10-05 |
| JPWO2023188971A5 true JPWO2023188971A5 (https=) | 2024-12-10 |
Family
ID=88200413
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511422A Pending JPWO2023188971A1 (https=) | 2022-03-28 | 2023-02-17 | |
| JP2024511421A Pending JPWO2023188970A1 (https=) | 2022-03-28 | 2023-02-17 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511421A Pending JPWO2023188970A1 (https=) | 2022-03-28 | 2023-02-17 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20250015149A1 (https=) |
| JP (2) | JPWO2023188971A1 (https=) |
| WO (2) | WO2023188971A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3135851B2 (ja) * | 1996-11-11 | 2001-02-19 | 松下電器産業株式会社 | 電界効果トランジスタ、半導体集積回路装置及び電界効果トランジスタの製造方法 |
| US20130175544A1 (en) * | 2010-11-10 | 2013-07-11 | Mitsubishi Electric Corporation | Semiconductor device, and method of manufacturing semiconductor device |
| JP7063186B2 (ja) * | 2018-08-16 | 2022-05-09 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 |
| JP2022016950A (ja) * | 2020-07-13 | 2022-01-25 | 富士通株式会社 | 半導体装置 |
| US11387169B2 (en) * | 2020-08-04 | 2022-07-12 | Nxp Usa, Inc. | Transistor with I/O ports in an active area of the transistor |
-
2023
- 2023-02-17 WO PCT/JP2023/005731 patent/WO2023188971A1/ja not_active Ceased
- 2023-02-17 WO PCT/JP2023/005730 patent/WO2023188970A1/ja not_active Ceased
- 2023-02-17 JP JP2024511422A patent/JPWO2023188971A1/ja active Pending
- 2023-02-17 JP JP2024511421A patent/JPWO2023188970A1/ja active Pending
-
2024
- 2024-09-24 US US18/894,473 patent/US20250015149A1/en active Pending
- 2024-09-24 US US18/894,495 patent/US20250015150A1/en active Pending
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