JPWO2023176312A1 - - Google Patents
Info
- Publication number
- JPWO2023176312A1 JPWO2023176312A1 JP2024507629A JP2024507629A JPWO2023176312A1 JP WO2023176312 A1 JPWO2023176312 A1 JP WO2023176312A1 JP 2024507629 A JP2024507629 A JP 2024507629A JP 2024507629 A JP2024507629 A JP 2024507629A JP WO2023176312 A1 JPWO2023176312 A1 JP WO2023176312A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/817—Combinations of field-effect devices and resistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
Landscapes
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022044441 | 2022-03-18 | ||
| JP2022044441 | 2022-03-18 | ||
| PCT/JP2023/005728 WO2023176312A1 (ja) | 2022-03-18 | 2023-02-17 | 電力増幅用半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023176312A1 true JPWO2023176312A1 (https=) | 2023-09-21 |
| JPWO2023176312A5 JPWO2023176312A5 (https=) | 2024-08-16 |
| JP7576207B2 JP7576207B2 (ja) | 2024-10-30 |
Family
ID=88023353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024507629A Active JP7576207B2 (ja) | 2022-03-18 | 2023-02-17 | 電力増幅用半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12317533B2 (https=) |
| EP (1) | EP4478424A4 (https=) |
| JP (1) | JP7576207B2 (https=) |
| CN (1) | CN118843944B (https=) |
| WO (1) | WO2023176312A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024030125A (ja) * | 2022-08-23 | 2024-03-07 | 住友電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
| CN118748153A (zh) * | 2024-05-21 | 2024-10-08 | 厦门市三安集成电路有限公司 | 漏电测试装置、半导体晶圆片及漏电测试方法 |
| KR102788568B1 (ko) * | 2024-06-26 | 2025-03-31 | (주)웨이비스 | 반도체 소자 및 그 제조방법 |
| WO2026071038A1 (ja) * | 2024-09-30 | 2026-04-02 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置および制御方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016219632A (ja) * | 2015-05-21 | 2016-12-22 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
| US20200144969A1 (en) * | 2017-07-24 | 2020-05-07 | Macom Technology Solutions Holdings, Inc. | Fet operational temperature determination by field plate resistance thermometry |
| JP2021077797A (ja) * | 2019-11-12 | 2021-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および電子機器 |
| CN113793870A (zh) * | 2021-11-16 | 2021-12-14 | 深圳市时代速信科技有限公司 | 一种半导体器件及其制备方法 |
| US20220020872A1 (en) * | 2020-07-15 | 2022-01-20 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299264A (ja) | 1987-05-29 | 1988-12-06 | Fuji Electric Co Ltd | 半導体装置 |
| JP2006147665A (ja) | 2004-11-16 | 2006-06-08 | Matsushita Electric Ind Co Ltd | トランジスタ半導体装置 |
| EP2161754A3 (en) * | 2008-09-03 | 2010-06-16 | Kabushiki Kaisha Toshiba | A semiconductor device and fabrication method for the same |
| JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
| EP2922093B1 (en) | 2014-03-19 | 2017-05-10 | Nxp B.V. | Hemt temperature sensor |
| JP6503202B2 (ja) | 2015-03-12 | 2019-04-17 | エイブリック株式会社 | 半導体装置 |
| CN115000169A (zh) | 2020-08-28 | 2022-09-02 | 英诺赛科（珠海）科技有限公司 | 半导体装置结构 |
| CN117941075A (zh) * | 2021-12-31 | 2024-04-26 | 英诺赛科(苏州)半导体有限公司 | 氮化物基半导体器件及其操作方法 |
-
2023
- 2023-02-17 US US18/846,163 patent/US12317533B2/en active Active
- 2023-02-17 JP JP2024507629A patent/JP7576207B2/ja active Active
- 2023-02-17 WO PCT/JP2023/005728 patent/WO2023176312A1/ja not_active Ceased
- 2023-02-17 CN CN202380026972.5A patent/CN118843944B/zh active Active
- 2023-02-17 EP EP23770271.7A patent/EP4478424A4/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016219632A (ja) * | 2015-05-21 | 2016-12-22 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
| US20200144969A1 (en) * | 2017-07-24 | 2020-05-07 | Macom Technology Solutions Holdings, Inc. | Fet operational temperature determination by field plate resistance thermometry |
| JP2021077797A (ja) * | 2019-11-12 | 2021-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および電子機器 |
| US20220020872A1 (en) * | 2020-07-15 | 2022-01-20 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
| CN113793870A (zh) * | 2021-11-16 | 2021-12-14 | 深圳市时代速信科技有限公司 | 一种半导体器件及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202341475A (zh) | 2023-10-16 |
| WO2023176312A1 (ja) | 2023-09-21 |
| US12317533B2 (en) | 2025-05-27 |
| JP7576207B2 (ja) | 2024-10-30 |
| CN118843944A (zh) | 2024-10-25 |
| US20250113525A1 (en) | 2025-04-03 |
| EP4478424A1 (en) | 2024-12-18 |
| CN118843944B (zh) | 2025-08-08 |
| EP4478424A4 (en) | 2025-04-09 |
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