JPWO2023157658A5 - - Google Patents

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Publication number
JPWO2023157658A5
JPWO2023157658A5 JP2024501278A JP2024501278A JPWO2023157658A5 JP WO2023157658 A5 JPWO2023157658 A5 JP WO2023157658A5 JP 2024501278 A JP2024501278 A JP 2024501278A JP 2024501278 A JP2024501278 A JP 2024501278A JP WO2023157658 A5 JPWO2023157658 A5 JP WO2023157658A5
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JP
Japan
Prior art keywords
silicon carbide
region
epitaxial substrate
substrate
substrate according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024501278A
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English (en)
Japanese (ja)
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JPWO2023157658A1 (https=
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Priority claimed from PCT/JP2023/003377 external-priority patent/WO2023157658A1/ja
Publication of JPWO2023157658A1 publication Critical patent/JPWO2023157658A1/ja
Publication of JPWO2023157658A5 publication Critical patent/JPWO2023157658A5/ja
Pending legal-status Critical Current

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JP2024501278A 2022-02-15 2023-02-02 Pending JPWO2023157658A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022021442 2022-02-15
PCT/JP2023/003377 WO2023157658A1 (ja) 2022-02-15 2023-02-02 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023157658A1 JPWO2023157658A1 (https=) 2023-08-24
JPWO2023157658A5 true JPWO2023157658A5 (https=) 2024-10-22

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ID=87578479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024501278A Pending JPWO2023157658A1 (https=) 2022-02-15 2023-02-02

Country Status (3)

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US (1) US20250142914A1 (https=)
JP (1) JPWO2023157658A1 (https=)
WO (1) WO2023157658A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
WO2016185819A1 (ja) * 2015-05-18 2016-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6069545B2 (ja) * 2016-01-20 2017-02-01 昭和電工株式会社 ＳｉＣエピタキシャルウェハの評価方法
JP6969628B2 (ja) * 2016-02-15 2021-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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