JPWO2024232252A5 - - Google Patents

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Publication number
JPWO2024232252A5
JPWO2024232252A5 JP2025519372A JP2025519372A JPWO2024232252A5 JP WO2024232252 A5 JPWO2024232252 A5 JP WO2024232252A5 JP 2025519372 A JP2025519372 A JP 2025519372A JP 2025519372 A JP2025519372 A JP 2025519372A JP WO2024232252 A5 JPWO2024232252 A5 JP WO2024232252A5
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JP
Japan
Prior art keywords
silicon carbide
carbide epitaxial
defects
main surface
epitaxial substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025519372A
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English (en)
Japanese (ja)
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JPWO2024232252A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/015727 external-priority patent/WO2024232252A1/ja
Publication of JPWO2024232252A1 publication Critical patent/JPWO2024232252A1/ja
Publication of JPWO2024232252A5 publication Critical patent/JPWO2024232252A5/ja
Pending legal-status Critical Current

Links

JP2025519372A 2023-05-11 2024-04-22 Pending JPWO2024232252A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023078635 2023-05-11
PCT/JP2024/015727 WO2024232252A1 (ja) 2023-05-11 2024-04-22 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024232252A1 JPWO2024232252A1 (https=) 2024-11-14
JPWO2024232252A5 true JPWO2024232252A5 (https=) 2026-02-09

Family

ID=93430085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025519372A Pending JPWO2024232252A1 (https=) 2023-05-11 2024-04-22

Country Status (2)

Country Link
JP (1) JPWO2024232252A1 (https=)
WO (1) WO2024232252A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
JP6648627B2 (ja) * 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
US12516443B2 (en) * 2021-02-15 2026-01-06 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate

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