JPWO2024018924A5 - - Google Patents

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Publication number
JPWO2024018924A5
JPWO2024018924A5 JP2024535023A JP2024535023A JPWO2024018924A5 JP WO2024018924 A5 JPWO2024018924 A5 JP WO2024018924A5 JP 2024535023 A JP2024535023 A JP 2024535023A JP 2024535023 A JP2024535023 A JP 2024535023A JP WO2024018924 A5 JPWO2024018924 A5 JP WO2024018924A5
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JP
Japan
Prior art keywords
silicon carbide
main surface
carbide epitaxial
recess
epitaxial substrate
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Pending
Application number
JP2024535023A
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English (en)
Japanese (ja)
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JPWO2024018924A1 (https=
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Priority claimed from PCT/JP2023/025277 external-priority patent/WO2024018924A1/ja
Publication of JPWO2024018924A1 publication Critical patent/JPWO2024018924A1/ja
Publication of JPWO2024018924A5 publication Critical patent/JPWO2024018924A5/ja
Pending legal-status Critical Current

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JP2024535023A 2022-07-20 2023-07-07 Pending JPWO2024018924A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022115800 2022-07-20
PCT/JP2023/025277 WO2024018924A1 (ja) 2022-07-20 2023-07-07 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024018924A1 JPWO2024018924A1 (https=) 2024-01-25
JPWO2024018924A5 true JPWO2024018924A5 (https=) 2025-03-28

Family

ID=89617781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024535023A Pending JPWO2024018924A1 (https=) 2022-07-20 2023-07-07

Country Status (3)

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US (1) US20250393275A1 (https=)
JP (1) JPWO2024018924A1 (https=)
WO (1) WO2024018924A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6311384B2 (ja) * 2014-03-24 2018-04-18 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6748572B2 (ja) * 2016-12-28 2020-09-02 昭和電工株式会社 ｐ型ＳｉＣエピタキシャルウェハ及びその製造方法

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