JPWO2025004788A5 - - Google Patents

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Publication number
JPWO2025004788A5
JPWO2025004788A5 JP2025529611A JP2025529611A JPWO2025004788A5 JP WO2025004788 A5 JPWO2025004788 A5 JP WO2025004788A5 JP 2025529611 A JP2025529611 A JP 2025529611A JP 2025529611 A JP2025529611 A JP 2025529611A JP WO2025004788 A5 JPWO2025004788 A5 JP WO2025004788A5
Authority
JP
Japan
Prior art keywords
silicon carbide
buffer layer
epitaxial substrate
dislocations
carbide epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025529611A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025004788A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/021160 external-priority patent/WO2025004788A1/ja
Publication of JPWO2025004788A1 publication Critical patent/JPWO2025004788A1/ja
Publication of JPWO2025004788A5 publication Critical patent/JPWO2025004788A5/ja
Pending legal-status Critical Current

Links

JP2025529611A 2023-06-28 2024-06-11 Pending JPWO2025004788A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023105807 2023-06-28
PCT/JP2024/021160 WO2025004788A1 (ja) 2023-06-28 2024-06-11 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法、および炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025004788A1 JPWO2025004788A1 (https=) 2025-01-02
JPWO2025004788A5 true JPWO2025004788A5 (https=) 2026-04-01

Family

ID=93938792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025529611A Pending JPWO2025004788A1 (https=) 2023-06-28 2024-06-11

Country Status (2)

Country Link
JP (1) JPWO2025004788A1 (https=)
WO (1) WO2025004788A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292686B (zh) * 2015-12-02 2021-02-12 三菱电机株式会社 碳化硅外延基板及碳化硅半导体装置
CN112335057B (zh) * 2018-12-04 2024-06-28 住友电气工业株式会社 碳化硅外延衬底及碳化硅半导体器件
JP7415831B2 (ja) * 2020-07-08 2024-01-17 株式会社プロテリアル 炭化ケイ素半導体エピタキシャル基板の製造方法

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