JPWO2025004788A1 - - Google Patents
Info
- Publication number
- JPWO2025004788A1 JPWO2025004788A1 JP2025529611A JP2025529611A JPWO2025004788A1 JP WO2025004788 A1 JPWO2025004788 A1 JP WO2025004788A1 JP 2025529611 A JP2025529611 A JP 2025529611A JP 2025529611 A JP2025529611 A JP 2025529611A JP WO2025004788 A1 JPWO2025004788 A1 JP WO2025004788A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023105807 | 2023-06-28 | ||
| PCT/JP2024/021160 WO2025004788A1 (ja) | 2023-06-28 | 2024-06-11 | 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法、および炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2025004788A1 true JPWO2025004788A1 (https=) | 2025-01-02 |
| JPWO2025004788A5 JPWO2025004788A5 (https=) | 2026-04-01 |
Family
ID=93938792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025529611A Pending JPWO2025004788A1 (https=) | 2023-06-28 | 2024-06-11 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2025004788A1 (https=) |
| WO (1) | WO2025004788A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108292686B (zh) * | 2015-12-02 | 2021-02-12 | 三菱电机株式会社 | 碳化硅外延基板及碳化硅半导体装置 |
| CN112335057B (zh) * | 2018-12-04 | 2024-06-28 | 住友电气工业株式会社 | 碳化硅外延衬底及碳化硅半导体器件 |
| JP7415831B2 (ja) * | 2020-07-08 | 2024-01-17 | 株式会社プロテリアル | 炭化ケイ素半導体エピタキシャル基板の製造方法 |
-
2024
- 2024-06-11 WO PCT/JP2024/021160 patent/WO2025004788A1/ja not_active Ceased
- 2024-06-11 JP JP2025529611A patent/JPWO2025004788A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025004788A1 (ja) | 2025-01-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251125 |