JP2022541490A5 - - Google Patents
Info
- Publication number
- JP2022541490A5 JP2022541490A5 JP2022502585A JP2022502585A JP2022541490A5 JP 2022541490 A5 JP2022541490 A5 JP 2022541490A5 JP 2022502585 A JP2022502585 A JP 2022502585A JP 2022502585 A JP2022502585 A JP 2022502585A JP 2022541490 A5 JP2022541490 A5 JP 2022541490A5
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic device
- graphene layer
- layer
- nanopyramid
- nanowire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1910170.8A GB201910170D0 (en) | 2019-07-16 | 2019-07-16 | Nanowire device |
| GB1910170.8 | 2019-07-16 | ||
| PCT/EP2020/070228 WO2021009325A1 (en) | 2019-07-16 | 2020-07-16 | Nanowire device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022541490A JP2022541490A (ja) | 2022-09-26 |
| JP2022541490A5 true JP2022541490A5 (https=) | 2023-07-12 |
| JP7787804B2 JP7787804B2 (ja) | 2025-12-17 |
Family
ID=67700197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022502585A Active JP7787804B2 (ja) | 2019-07-16 | 2020-07-16 | ナノワイヤデバイス |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20220262978A1 (https=) |
| EP (1) | EP4000089A1 (https=) |
| JP (1) | JP7787804B2 (https=) |
| KR (1) | KR20220068218A (https=) |
| CN (1) | CN114207778A (https=) |
| CA (1) | CA3147488A1 (https=) |
| GB (1) | GB201910170D0 (https=) |
| TW (1) | TW202116664A (https=) |
| WO (1) | WO2021009325A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682061B (zh) * | 2020-05-18 | 2021-12-31 | 华为技术有限公司 | 氮化物外延片及其制备方法和半导体器件 |
| CN112071967B (zh) * | 2020-11-16 | 2021-02-26 | 至芯半导体(杭州)有限公司 | 紫外led结构及其制备方法 |
| KR102947899B1 (ko) * | 2021-01-27 | 2026-04-03 | 삼성디스플레이 주식회사 | 발광 소자, 발광 소자를 포함하는 발광 소자 유닛, 및 표시 장치 |
| KR20230114631A (ko) | 2022-01-25 | 2023-08-01 | 삼성전자주식회사 | 나노 로드 발광 다이오드, 디스플레이 장치 및 제조 방법 |
| GB202212397D0 (en) | 2022-08-25 | 2022-10-12 | Crayonano As | Nanowire device with mask layer |
| GB202212395D0 (en) | 2022-08-25 | 2022-10-12 | Crayonano As | Nanostructure/Microstructure device |
| GB2626352A (en) * | 2023-01-19 | 2024-07-24 | Paragraf Ltd | A method of patterning a two-dimensional material for use in the manufacture of an electronic device |
| CN116463627B (zh) * | 2023-04-18 | 2024-03-15 | 陕西科技大学 | 一种磷化铟纳米线及其制备方法 |
| DE102023113584A1 (de) * | 2023-05-24 | 2024-11-28 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
| CN117334774A (zh) * | 2023-10-31 | 2024-01-02 | 华南师范大学 | InGaN基双波长光电探测外延晶片、制备方法和光触发布尔逻辑门器件 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968359B2 (en) * | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
| US8415682B2 (en) * | 2007-12-28 | 2013-04-09 | Rohm Co., Ltd. | Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device |
| EP2357676A4 (en) * | 2008-10-17 | 2013-05-29 | Univ Hokkaido Nat Univ Corp | SEMICONDUCTOR LIGHT ELEMENT ARRAY AND MANUFACTURING METHOD THEREFOR |
| US20110175126A1 (en) * | 2010-01-15 | 2011-07-21 | Hung-Chih Yang | Light-emitting diode structure |
| KR101217209B1 (ko) * | 2010-10-07 | 2012-12-31 | 서울대학교산학협력단 | 발광소자 및 그 제조방법 |
| GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
| US9024310B2 (en) * | 2011-01-12 | 2015-05-05 | Tsinghua University | Epitaxial structure |
| KR20120083084A (ko) * | 2011-01-17 | 2012-07-25 | 삼성엘이디 주식회사 | 나노 로드 발광 소자 및 그 제조 방법 |
| GB201200355D0 (en) | 2012-01-10 | 2012-02-22 | Norwegian Univ Sci & Tech Ntnu | Nanowires |
| KR101967836B1 (ko) * | 2012-12-14 | 2019-04-10 | 삼성전자주식회사 | 3차원 발광 소자 및 그 제조방법 |
| KR101898679B1 (ko) * | 2012-12-14 | 2018-10-04 | 삼성전자주식회사 | 나노구조 발광소자 |
| KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
| KR102075986B1 (ko) * | 2014-02-03 | 2020-02-11 | 삼성전자주식회사 | 반도체 발광소자 |
| US9530643B2 (en) * | 2015-03-12 | 2016-12-27 | International Business Machines Corporation | Selective epitaxy using epitaxy-prevention layers |
| CN108292694A (zh) | 2015-07-13 | 2018-07-17 | 科莱约纳诺公司 | 纳米线/纳米锥形状的发光二极管及光检测器 |
| US10347791B2 (en) * | 2015-07-13 | 2019-07-09 | Crayonano As | Nanowires or nanopyramids grown on graphitic substrate |
| CN119349566A (zh) | 2015-09-08 | 2025-01-24 | 麻省理工学院 | 基于石墨烯的层转移的系统和方法 |
| DE102016114992A1 (de) * | 2016-08-12 | 2018-02-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP2018152413A (ja) * | 2017-03-10 | 2018-09-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| KR102578825B1 (ko) * | 2017-10-31 | 2023-09-15 | 삼성전자주식회사 | 전자소자용 전도성 복합구조체 , 그 제조방법, 이를 포함하는 전자소자용 전극 및 전자소자 |
| WO2019099461A1 (en) * | 2017-11-14 | 2019-05-23 | Massachusetts Institute Of Technology | Epitaxial growth and transfer via patterned two-dimensional (2d) layers |
| CN108807617A (zh) * | 2018-06-30 | 2018-11-13 | 华南理工大学 | 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片及其制备方法 |
-
2019
- 2019-07-16 GB GBGB1910170.8A patent/GB201910170D0/en not_active Ceased
-
2020
- 2020-07-16 KR KR1020227005153A patent/KR20220068218A/ko not_active Ceased
- 2020-07-16 EP EP20742716.2A patent/EP4000089A1/en active Pending
- 2020-07-16 CN CN202080053524.0A patent/CN114207778A/zh active Pending
- 2020-07-16 WO PCT/EP2020/070228 patent/WO2021009325A1/en not_active Ceased
- 2020-07-16 JP JP2022502585A patent/JP7787804B2/ja active Active
- 2020-07-16 US US17/627,290 patent/US20220262978A1/en not_active Abandoned
- 2020-07-16 CA CA3147488A patent/CA3147488A1/en active Pending
- 2020-07-16 TW TW109124144A patent/TW202116664A/zh unknown
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