KR20220068218A - 나노와이어 소자 - Google Patents

나노와이어 소자 Download PDF

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KR20220068218A
KR20220068218A KR1020227005153A KR20227005153A KR20220068218A KR 20220068218 A KR20220068218 A KR 20220068218A KR 1020227005153 A KR1020227005153 A KR 1020227005153A KR 20227005153 A KR20227005153 A KR 20227005153A KR 20220068218 A KR20220068218 A KR 20220068218A
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Prior art keywords
nanowires
nanopyramids
layer
substrate
graphene
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Korean (ko)
Inventor
마지드 먼시
헬게 웨만
다사 엘 데라즈
뵈른-오베 엠 핌랜드
레이둘프 비겐
데이비드 배리엣
Original Assignee
크래요나노 에이에스
노르웨이전 유니버시티 오브 사이언스 앤드 테크놀러지(엔티엔유)
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Publication of KR20220068218A publication Critical patent/KR20220068218A/ko
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    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
KR1020227005153A 2019-07-16 2020-07-16 나노와이어 소자 Ceased KR20220068218A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1910170.8A GB201910170D0 (en) 2019-07-16 2019-07-16 Nanowire device
GB1910170.8 2019-07-16
PCT/EP2020/070228 WO2021009325A1 (en) 2019-07-16 2020-07-16 Nanowire device

Publications (1)

Publication Number Publication Date
KR20220068218A true KR20220068218A (ko) 2022-05-25

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KR1020227005153A Ceased KR20220068218A (ko) 2019-07-16 2020-07-16 나노와이어 소자

Country Status (9)

Country Link
US (1) US20220262978A1 (https=)
EP (1) EP4000089A1 (https=)
JP (1) JP7787804B2 (https=)
KR (1) KR20220068218A (https=)
CN (1) CN114207778A (https=)
CA (1) CA3147488A1 (https=)
GB (1) GB201910170D0 (https=)
TW (1) TW202116664A (https=)
WO (1) WO2021009325A1 (https=)

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CN111682061B (zh) * 2020-05-18 2021-12-31 华为技术有限公司 氮化物外延片及其制备方法和半导体器件
CN112071967B (zh) * 2020-11-16 2021-02-26 至芯半导体(杭州)有限公司 紫外led结构及其制备方法
KR102947899B1 (ko) * 2021-01-27 2026-04-03 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 발광 소자 유닛, 및 표시 장치
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