CN114207778A - 纳米线器件 - Google Patents

纳米线器件 Download PDF

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Publication number
CN114207778A
CN114207778A CN202080053524.0A CN202080053524A CN114207778A CN 114207778 A CN114207778 A CN 114207778A CN 202080053524 A CN202080053524 A CN 202080053524A CN 114207778 A CN114207778 A CN 114207778A
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China
Prior art keywords
nanowires
layer
graphene
composition
substrate
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Pending
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CN202080053524.0A
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English (en)
Chinese (zh)
Inventor
马齐德·孟希
赫尔格·韦曼
达萨·L·德赫拉杰
比约恩-奥韦·M·菲姆兰
莱杜尔夫·维根
戴维·巴里埃
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Norwegian University of Science and Technology NTNU
Crayonano AS
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Norwegian University of Science and Technology NTNU
Crayonano AS
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Application filed by Norwegian University of Science and Technology NTNU, Crayonano AS filed Critical Norwegian University of Science and Technology NTNU
Publication of CN114207778A publication Critical patent/CN114207778A/zh
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    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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    • Y02E10/544—Solar cells from Group III-V materials

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
CN202080053524.0A 2019-07-16 2020-07-16 纳米线器件 Pending CN114207778A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1910170.8A GB201910170D0 (en) 2019-07-16 2019-07-16 Nanowire device
GB1910170.8 2019-07-16
PCT/EP2020/070228 WO2021009325A1 (en) 2019-07-16 2020-07-16 Nanowire device

Publications (1)

Publication Number Publication Date
CN114207778A true CN114207778A (zh) 2022-03-18

Family

ID=67700197

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080053524.0A Pending CN114207778A (zh) 2019-07-16 2020-07-16 纳米线器件

Country Status (9)

Country Link
US (1) US20220262978A1 (https=)
EP (1) EP4000089A1 (https=)
JP (1) JP7787804B2 (https=)
KR (1) KR20220068218A (https=)
CN (1) CN114207778A (https=)
CA (1) CA3147488A1 (https=)
GB (1) GB201910170D0 (https=)
TW (1) TW202116664A (https=)
WO (1) WO2021009325A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116463627A (zh) * 2023-04-18 2023-07-21 陕西科技大学 一种磷化铟纳米线及其制备方法

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* Cited by examiner, † Cited by third party
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CN111682061B (zh) * 2020-05-18 2021-12-31 华为技术有限公司 氮化物外延片及其制备方法和半导体器件
CN112071967B (zh) * 2020-11-16 2021-02-26 至芯半导体(杭州)有限公司 紫外led结构及其制备方法
KR102947899B1 (ko) * 2021-01-27 2026-04-03 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 발광 소자 유닛, 및 표시 장치
KR20230114631A (ko) 2022-01-25 2023-08-01 삼성전자주식회사 나노 로드 발광 다이오드, 디스플레이 장치 및 제조 방법
GB202212397D0 (en) 2022-08-25 2022-10-12 Crayonano As Nanowire device with mask layer
GB202212395D0 (en) 2022-08-25 2022-10-12 Crayonano As Nanostructure/Microstructure device
GB2626352A (en) * 2023-01-19 2024-07-24 Paragraf Ltd A method of patterning a two-dimensional material for use in the manufacture of an electronic device
DE102023113584A1 (de) * 2023-05-24 2024-11-28 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
CN117334774A (zh) * 2023-10-31 2024-01-02 华南师范大学 InGaN基双波长光电探测外延晶片、制备方法和光触发布尔逻辑门器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120175606A1 (en) * 2011-01-12 2012-07-12 Hon Hai Precision Industry Co., Ltd. Epitaxial structure
KR20120083084A (ko) * 2011-01-17 2012-07-25 삼성엘이디 주식회사 나노 로드 발광 소자 및 그 제조 방법
US20140166974A1 (en) * 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20150221823A1 (en) * 2014-02-03 2015-08-06 Samsung Electronics Co., Ltd. Semiconductor light emitting device
CN108352424A (zh) * 2015-07-13 2018-07-31 科莱约纳诺公司 石墨基板上生长的纳米线或纳米锥
CN108807617A (zh) * 2018-06-30 2018-11-13 华南理工大学 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968359B2 (en) * 2006-03-10 2011-06-28 Stc.Unm Thin-walled structures
US8415682B2 (en) * 2007-12-28 2013-04-09 Rohm Co., Ltd. Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device
EP2357676A4 (en) * 2008-10-17 2013-05-29 Univ Hokkaido Nat Univ Corp SEMICONDUCTOR LIGHT ELEMENT ARRAY AND MANUFACTURING METHOD THEREFOR
US20110175126A1 (en) * 2010-01-15 2011-07-21 Hung-Chih Yang Light-emitting diode structure
KR101217209B1 (ko) * 2010-10-07 2012-12-31 서울대학교산학협력단 발광소자 및 그 제조방법
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
GB201200355D0 (en) 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
KR101967836B1 (ko) * 2012-12-14 2019-04-10 삼성전자주식회사 3차원 발광 소자 및 그 제조방법
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US9530643B2 (en) * 2015-03-12 2016-12-27 International Business Machines Corporation Selective epitaxy using epitaxy-prevention layers
CN108292694A (zh) 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
CN119349566A (zh) 2015-09-08 2025-01-24 麻省理工学院 基于石墨烯的层转移的系统和方法
DE102016114992A1 (de) * 2016-08-12 2018-02-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2018152413A (ja) * 2017-03-10 2018-09-27 株式会社東芝 半導体装置及びその製造方法
KR102578825B1 (ko) * 2017-10-31 2023-09-15 삼성전자주식회사 전자소자용 전도성 복합구조체 , 그 제조방법, 이를 포함하는 전자소자용 전극 및 전자소자
WO2019099461A1 (en) * 2017-11-14 2019-05-23 Massachusetts Institute Of Technology Epitaxial growth and transfer via patterned two-dimensional (2d) layers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120175606A1 (en) * 2011-01-12 2012-07-12 Hon Hai Precision Industry Co., Ltd. Epitaxial structure
KR20120083084A (ko) * 2011-01-17 2012-07-25 삼성엘이디 주식회사 나노 로드 발광 소자 및 그 제조 방법
US20140166974A1 (en) * 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20150221823A1 (en) * 2014-02-03 2015-08-06 Samsung Electronics Co., Ltd. Semiconductor light emitting device
CN108352424A (zh) * 2015-07-13 2018-07-31 科莱约纳诺公司 石墨基板上生长的纳米线或纳米锥
CN108807617A (zh) * 2018-06-30 2018-11-13 华南理工大学 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RENAUD PUYBARET: "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask", APPLIED PHYSICS LETTERS, vol. 108, no. 10, 7 March 2016 (2016-03-07), pages 1 - 5 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116463627A (zh) * 2023-04-18 2023-07-21 陕西科技大学 一种磷化铟纳米线及其制备方法
CN116463627B (zh) * 2023-04-18 2024-03-15 陕西科技大学 一种磷化铟纳米线及其制备方法

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