TW202116664A - 奈米線裝置 - Google Patents

奈米線裝置 Download PDF

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Publication number
TW202116664A
TW202116664A TW109124144A TW109124144A TW202116664A TW 202116664 A TW202116664 A TW 202116664A TW 109124144 A TW109124144 A TW 109124144A TW 109124144 A TW109124144 A TW 109124144A TW 202116664 A TW202116664 A TW 202116664A
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Taiwan
Prior art keywords
nanowires
layer
nanocones
substrate
graphene
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TW109124144A
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English (en)
Chinese (zh)
Inventor
馬茲德 曼西
海爾吉 威曼
達撒 Ｌ 迪爾拉吉
伯強恩 歐夫 Ｍ 費南
雷道夫 維根
大衛 貝利葉
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挪威商卡亞奈米公司
挪威科技大學
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Publication of TW202116664A publication Critical patent/TW202116664A/zh

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    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
TW109124144A 2019-07-16 2020-07-16 奈米線裝置 TW202116664A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1910170.8A GB201910170D0 (en) 2019-07-16 2019-07-16 Nanowire device
GB1910170.8 2019-07-16

Publications (1)

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TW202116664A true TW202116664A (zh) 2021-05-01

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US (1) US20220262978A1 (https=)
EP (1) EP4000089A1 (https=)
JP (1) JP7787804B2 (https=)
KR (1) KR20220068218A (https=)
CN (1) CN114207778A (https=)
CA (1) CA3147488A1 (https=)
GB (1) GB201910170D0 (https=)
TW (1) TW202116664A (https=)
WO (1) WO2021009325A1 (https=)

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CN111682061B (zh) * 2020-05-18 2021-12-31 华为技术有限公司 氮化物外延片及其制备方法和半导体器件
CN112071967B (zh) * 2020-11-16 2021-02-26 至芯半导体(杭州)有限公司 紫外led结构及其制备方法
KR102947899B1 (ko) * 2021-01-27 2026-04-03 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 발광 소자 유닛, 및 표시 장치
KR20230114631A (ko) 2022-01-25 2023-08-01 삼성전자주식회사 나노 로드 발광 다이오드, 디스플레이 장치 및 제조 방법
GB202212397D0 (en) 2022-08-25 2022-10-12 Crayonano As Nanowire device with mask layer
GB202212395D0 (en) 2022-08-25 2022-10-12 Crayonano As Nanostructure/Microstructure device
GB2626352A (en) * 2023-01-19 2024-07-24 Paragraf Ltd A method of patterning a two-dimensional material for use in the manufacture of an electronic device
CN116463627B (zh) * 2023-04-18 2024-03-15 陕西科技大学 一种磷化铟纳米线及其制备方法
DE102023113584A1 (de) * 2023-05-24 2024-11-28 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
CN117334774A (zh) * 2023-10-31 2024-01-02 华南师范大学 InGaN基双波长光电探测外延晶片、制备方法和光触发布尔逻辑门器件

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