JP2004253817A5 - - Google Patents

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Publication number
JP2004253817A5
JP2004253817A5 JP2004139815A JP2004139815A JP2004253817A5 JP 2004253817 A5 JP2004253817 A5 JP 2004253817A5 JP 2004139815 A JP2004139815 A JP 2004139815A JP 2004139815 A JP2004139815 A JP 2004139815A JP 2004253817 A5 JP2004253817 A5 JP 2004253817A5
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JP
Japan
Prior art keywords
nitride semiconductor
laser element
substrate
semiconductor laser
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004139815A
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English (en)
Japanese (ja)
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JP2004253817A (ja
JP4637503B2 (ja
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Application filed filed Critical
Priority to JP2004139815A priority Critical patent/JP4637503B2/ja
Priority claimed from JP2004139815A external-priority patent/JP4637503B2/ja
Publication of JP2004253817A publication Critical patent/JP2004253817A/ja
Publication of JP2004253817A5 publication Critical patent/JP2004253817A5/ja
Application granted granted Critical
Publication of JP4637503B2 publication Critical patent/JP4637503B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004139815A 1997-04-11 2004-05-10 窒化物半導体レーザ素子の製造方法 Expired - Fee Related JP4637503B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004139815A JP4637503B2 (ja) 1997-04-11 2004-05-10 窒化物半導体レーザ素子の製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP9331597 1997-04-11
JP18107197 1997-07-07
JP20147797 1997-07-28
JP29009597 1997-10-22
JP29009797 1997-10-22
JP2004139815A JP4637503B2 (ja) 1997-04-11 2004-05-10 窒化物半導体レーザ素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7724598A Division JPH11191657A (ja) 1997-04-11 1998-03-25 窒化物半導体の成長方法及び窒化物半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007219841A Division JP2008034862A (ja) 1997-04-11 2007-08-27 窒化物半導体の成長方法

Publications (3)

Publication Number Publication Date
JP2004253817A JP2004253817A (ja) 2004-09-09
JP2004253817A5 true JP2004253817A5 (https=) 2005-07-21
JP4637503B2 JP4637503B2 (ja) 2011-02-23

Family

ID=33033354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004139815A Expired - Fee Related JP4637503B2 (ja) 1997-04-11 2004-05-10 窒化物半導体レーザ素子の製造方法

Country Status (1)

Country Link
JP (1) JP4637503B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408264B (zh) * 2005-12-15 2013-09-11 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
JP5095653B2 (ja) * 2009-03-23 2012-12-12 日本電信電話株式会社 窒化物半導体構造
JP5451796B2 (ja) * 2012-03-06 2014-03-26 日本電信電話株式会社 窒化物半導体構造
JP6321455B2 (ja) * 2014-05-21 2018-05-09 東京応化工業株式会社 窒化ガリウムの製造方法
KR102712118B1 (ko) * 2021-11-26 2024-09-30 웨이브로드 주식회사 비발광 3족 질화물 반도체 적층체를 제조하는 방법

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