JP2004253817A5 - - Google Patents
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- Publication number
- JP2004253817A5 JP2004253817A5 JP2004139815A JP2004139815A JP2004253817A5 JP 2004253817 A5 JP2004253817 A5 JP 2004253817A5 JP 2004139815 A JP2004139815 A JP 2004139815A JP 2004139815 A JP2004139815 A JP 2004139815A JP 2004253817 A5 JP2004253817 A5 JP 2004253817A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- laser element
- substrate
- semiconductor laser
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (5)
前記窒化物半導体基板上に形成された、リッジストライプを有するレーザ素子構造と、
前記窒化物半導体基板の裏面に形成された電極と、
前記レーザ素子構造の共振面に形成された誘電体膜とを有する窒化物半導体レーザ素子であって、
前記窒化物半導体基板は、異種基板上を横方向に成長しながら形成された窒化物半導体層を有し、該窒化物半導体層の（１１−００）面が前記共振面とされたことを特徴とする窒化物半導体レーザ素子。 A nitride semiconductor substrate;
A laser element structure having a ridge stripe formed on the nitride semiconductor substrate;
An electrode formed on the back surface of the nitride semiconductor substrate;
A nitride semiconductor laser element having a dielectric film formed on a resonance surface of the laser element structure,
The nitride semiconductor substrate has a nitride semiconductor layer formed while growing on a heterogeneous substrate in a lateral direction, and a (11-00) plane of the nitride semiconductor layer is the resonance plane. Nitride semiconductor laser device.
The nitride semiconductor laser device according to any one of claims 1 to 4, wherein the crystal defect density of the nitride semiconductor layer is 10 6 / cm 2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004139815A JP4637503B2 (en) | 1997-04-11 | 2004-05-10 | Manufacturing method of nitride semiconductor laser device |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9331597 | 1997-04-11 | ||
| JP18107197 | 1997-07-07 | ||
| JP20147797 | 1997-07-28 | ||
| JP29009797 | 1997-10-22 | ||
| JP29009597 | 1997-10-22 | ||
| JP2004139815A JP4637503B2 (en) | 1997-04-11 | 2004-05-10 | Manufacturing method of nitride semiconductor laser device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7724598A Division JPH11191657A (en) | 1997-04-11 | 1998-03-25 | Growing method of nitride semiconductor and nitride semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007219841A Division JP2008034862A (en) | 1997-04-11 | 2007-08-27 | Growing method for nitride semiconductor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004253817A JP2004253817A (en) | 2004-09-09 |
| JP2004253817A5 true JP2004253817A5 (en) | 2005-07-21 |
| JP4637503B2 JP4637503B2 (en) | 2011-02-23 |
Family
ID=33033354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004139815A Expired - Fee Related JP4637503B2 (en) | 1997-04-11 | 2004-05-10 | Manufacturing method of nitride semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4637503B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI408264B (en) * | 2005-12-15 | 2013-09-11 | Saint Gobain Cristaux & Detecteurs | New process for growth of low dislocation density gan |
| JP4807081B2 (en) * | 2006-01-16 | 2011-11-02 | ソニー株式会社 | Method for forming underlayer made of GaN-based compound semiconductor, and method for manufacturing GaN-based semiconductor light-emitting device |
| JP5095653B2 (en) * | 2009-03-23 | 2012-12-12 | 日本電信電話株式会社 | Nitride semiconductor structure |
| JP5451796B2 (en) * | 2012-03-06 | 2014-03-26 | 日本電信電話株式会社 | Nitride semiconductor structure |
| JP6321455B2 (en) * | 2014-05-21 | 2018-05-09 | 東京応化工業株式会社 | Method for producing gallium nitride |
-
2004
- 2004-05-10 JP JP2004139815A patent/JP4637503B2/en not_active Expired - Fee Related
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